AU4355200A - Led having embedded light reflectors to enhance led output efficiency - Google Patents

Led having embedded light reflectors to enhance led output efficiency

Info

Publication number
AU4355200A
AU4355200A AU43552/00A AU4355200A AU4355200A AU 4355200 A AU4355200 A AU 4355200A AU 43552/00 A AU43552/00 A AU 43552/00A AU 4355200 A AU4355200 A AU 4355200A AU 4355200 A AU4355200 A AU 4355200A
Authority
AU
Australia
Prior art keywords
led
enhance
output efficiency
light reflectors
embedded light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU43552/00A
Inventor
Chen Ji
Chen Li
Yu-Hwa Lo
Zuhua Zhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nova Crystals Inc
Original Assignee
Nova Crystals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nova Crystals Inc filed Critical Nova Crystals Inc
Publication of AU4355200A publication Critical patent/AU4355200A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
AU43552/00A 1999-04-28 2000-04-14 Led having embedded light reflectors to enhance led output efficiency Abandoned AU4355200A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US30089299A 1999-04-28 1999-04-28
US09300892 1999-04-28
PCT/US2000/010285 WO2000065667A1 (en) 1999-04-28 2000-04-14 Led having embedded light reflectors to enhance led output efficiency

Publications (1)

Publication Number Publication Date
AU4355200A true AU4355200A (en) 2000-11-10

Family

ID=23161039

Family Applications (1)

Application Number Title Priority Date Filing Date
AU43552/00A Abandoned AU4355200A (en) 1999-04-28 2000-04-14 Led having embedded light reflectors to enhance led output efficiency

Country Status (3)

Country Link
AU (1) AU4355200A (en)
TW (1) TW445658B (en)
WO (1) WO2000065667A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563142B2 (en) * 2001-07-11 2003-05-13 Lumileds Lighting, U.S., Llc Reducing the variation of far-field radiation patterns of flipchip light emitting diodes
DE10245632B4 (en) * 2002-09-30 2006-10-26 Osram Opto Semiconductors Gmbh Electromagnetic radiation emitting device and method for its production
KR100581831B1 (en) * 2004-02-05 2006-05-23 엘지전자 주식회사 Light emitting diode
CN102856457B (en) * 2012-09-20 2015-08-05 江苏威纳德照明科技有限公司 Gallium nitride based light emitting diode
CN102856456B (en) * 2012-09-20 2015-11-25 江苏威纳德照明科技有限公司 Vertical type light emitting diode
CN102832309B (en) * 2012-09-20 2016-01-20 江苏威纳德照明科技有限公司 There is cubic circulus reflector gallium nitride based light emitting diode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5537433A (en) * 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter
DE19629920B4 (en) * 1995-08-10 2006-02-02 LumiLeds Lighting, U.S., LLC, San Jose Light-emitting diode with a non-absorbing distributed Bragg reflector
US5881085A (en) * 1996-07-25 1999-03-09 Picolight, Incorporated Lens comprising at least one oxidized layer and method for forming same

Also Published As

Publication number Publication date
TW445658B (en) 2001-07-11
WO2000065667A1 (en) 2000-11-02

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase