AU4276696A - Frequency-doubled diode laser device - Google Patents

Frequency-doubled diode laser device

Info

Publication number
AU4276696A
AU4276696A AU42766/96A AU4276696A AU4276696A AU 4276696 A AU4276696 A AU 4276696A AU 42766/96 A AU42766/96 A AU 42766/96A AU 4276696 A AU4276696 A AU 4276696A AU 4276696 A AU4276696 A AU 4276696A
Authority
AU
Australia
Prior art keywords
frequency
laser device
diode laser
doubled diode
doubled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU42766/96A
Inventor
Fredrik Laurell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU4276696A publication Critical patent/AU4276696A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/146—External cavity lasers using a fiber as external cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0092—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for nonlinear frequency conversion, e.g. second harmonic generation [SHG] or sum- or difference-frequency generation outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
AU42766/96A 1994-12-07 1995-12-07 Frequency-doubled diode laser device Abandoned AU4276696A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE9404254 1994-12-07
SE9404254A SE504584C2 (en) 1994-12-07 1994-12-07 Apparatus for generating frequency doubled laser light by quasi-phase matching
PCT/SE1995/001474 WO1996018132A1 (en) 1994-12-07 1995-12-07 Frequency-doubled diode laser device

Publications (1)

Publication Number Publication Date
AU4276696A true AU4276696A (en) 1996-06-26

Family

ID=20396254

Family Applications (1)

Application Number Title Priority Date Filing Date
AU42766/96A Abandoned AU4276696A (en) 1994-12-07 1995-12-07 Frequency-doubled diode laser device

Country Status (3)

Country Link
AU (1) AU4276696A (en)
SE (1) SE504584C2 (en)
WO (1) WO1996018132A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE510442C2 (en) * 1996-09-05 1999-05-25 Fredrik Laurell microchip Laser
JP2002055370A (en) * 1999-12-06 2002-02-20 Fuji Photo Film Co Ltd Optical wavelength conversion module
EP1130717A3 (en) * 1999-12-06 2003-03-19 Fuji Photo Film Co., Ltd. Semiconductor laser light source with external cavity
GB2413697A (en) * 2004-04-27 2005-11-02 Bookham Technology Plc Uncooled semiconductor laser
CN102782968A (en) 2010-01-08 2012-11-14 奥兰若技术有限公司 Laser system with highly linear output
WO2022014039A1 (en) * 2020-07-17 2022-01-20 日本電信電話株式会社 Light emission system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01177705U (en) * 1988-06-06 1989-12-19
US4895422A (en) * 1988-12-13 1990-01-23 The United States Of America As Represented By The Secretary Of The Air Force Phase-matchable, single-mode fiber-optic device
US5109462A (en) * 1989-09-07 1992-04-28 Sharp Kabushiki Kaisha Light wavelength converter
CA2028506C (en) * 1990-10-25 2001-07-17 National Research Council Of Canada Optical multilayer structures for harmonic laser emission

Also Published As

Publication number Publication date
WO1996018132A1 (en) 1996-06-13
SE504584C2 (en) 1997-03-10
SE9404254D0 (en) 1994-12-07
SE9404254L (en) 1996-06-08

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