AU3193995A - A method of modification of the izotopic ratio of the izotopes introduced in the cubic and hexagonal crystalline nets - Google Patents

A method of modification of the izotopic ratio of the izotopes introduced in the cubic and hexagonal crystalline nets

Info

Publication number
AU3193995A
AU3193995A AU31939/95A AU3193995A AU3193995A AU 3193995 A AU3193995 A AU 3193995A AU 31939/95 A AU31939/95 A AU 31939/95A AU 3193995 A AU3193995 A AU 3193995A AU 3193995 A AU3193995 A AU 3193995A
Authority
AU
Australia
Prior art keywords
izotopic
izotopes
nets
cubic
modification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU31939/95A
Inventor
Viorel Arghiropol
Ion Dumitru
Mircea Mihail Fanica
Weber Daniel Gavrilas
Germina Ilas
Virgil Iordache
Ion Istrate
Marin Ivascu
Tudor George Maruntelu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sc Tibesti Sa Alba Iulia
Original Assignee
S C Tibesti S A Alba Iulia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by S C Tibesti S A Alba Iulia filed Critical S C Tibesti S A Alba Iulia
Publication of AU3193995A publication Critical patent/AU3193995A/en
Abandoned legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01DSEPARATION
    • B01D59/00Separation of different isotopes of the same chemical element
    • B01D59/02Separation by phase transition
    • B01D59/08Separation by phase transition by fractional crystallisation, by precipitation, by zone freezing
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU31939/95A 1995-07-13 1995-07-17 A method of modification of the izotopic ratio of the izotopes introduced in the cubic and hexagonal crystalline nets Abandoned AU3193995A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
RO95-01302 1995-07-13
RO9501302 1995-07-13
PCT/RO1995/000008 WO1997003235A1 (en) 1995-07-13 1995-07-17 A method of modification of the izotopic ratio of the izotopes introduced in the cubic and hexagonal crystalline nets

Publications (1)

Publication Number Publication Date
AU3193995A true AU3193995A (en) 1997-02-10

Family

ID=20102347

Family Applications (1)

Application Number Title Priority Date Filing Date
AU31939/95A Abandoned AU3193995A (en) 1995-07-13 1995-07-17 A method of modification of the izotopic ratio of the izotopes introduced in the cubic and hexagonal crystalline nets

Country Status (2)

Country Link
AU (1) AU3193995A (en)
WO (1) WO1997003235A1 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3503264A1 (en) * 1985-01-31 1986-08-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen METHOD FOR MODIFYING THE LOCAL, ATOMARIC COMPOSITION OF SOLID BODIES, IN PARTICULAR SEMICONDUCTORS
US5144409A (en) * 1990-09-05 1992-09-01 Yale University Isotopically enriched semiconductor devices

Also Published As

Publication number Publication date
WO1997003235A1 (en) 1997-01-30

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