AU3184489A - Process for anisotropic etching of semiconductor materials using an electrochemical etch-stop - Google Patents

Process for anisotropic etching of semiconductor materials using an electrochemical etch-stop

Info

Publication number
AU3184489A
AU3184489A AU31844/89A AU3184489A AU3184489A AU 3184489 A AU3184489 A AU 3184489A AU 31844/89 A AU31844/89 A AU 31844/89A AU 3184489 A AU3184489 A AU 3184489A AU 3184489 A AU3184489 A AU 3184489A
Authority
AU
Australia
Prior art keywords
stop
semiconductor materials
anisotropic etching
electrochemical etch
etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU31844/89A
Inventor
Wolfgang Benecke
Gunther Findler
Bernd Lochel
Jiri Marek
Uwe Schnakenberg
Martin Willmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Robert Bosch GmbH
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of AU3184489A publication Critical patent/AU3184489A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
AU31844/89A 1988-02-24 1989-02-24 Process for anisotropic etching of semiconductor materials using an electrochemical etch-stop Abandoned AU3184489A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3805752 1988-02-24
DE19883805752 DE3805752A1 (en) 1988-02-24 1988-02-24 ANISOTROPIC ETCHING PROCESS WITH ELECTROCHEMICAL ETCH STOP

Publications (1)

Publication Number Publication Date
AU3184489A true AU3184489A (en) 1989-09-22

Family

ID=6348056

Family Applications (1)

Application Number Title Priority Date Filing Date
AU31844/89A Abandoned AU3184489A (en) 1988-02-24 1989-02-24 Process for anisotropic etching of semiconductor materials using an electrochemical etch-stop

Country Status (3)

Country Link
AU (1) AU3184489A (en)
DE (1) DE3805752A1 (en)
WO (1) WO1989008323A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3920644C1 (en) * 1989-06-23 1990-12-20 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
US5071510A (en) * 1989-09-22 1991-12-10 Robert Bosch Gmbh Process for anisotropic etching of silicon plates
US5207866A (en) * 1991-01-17 1993-05-04 Motorola, Inc. Anisotropic single crystal silicon etching solution and method
DE4204436A1 (en) * 1992-02-14 1993-08-19 Daimler Benz Ag Semiconductor device mfr. from thin foil - using semiconductor supports during foil growth and structuring operations
DE4226497A1 (en) * 1992-08-11 1994-02-17 Daimler Benz Ag Thin etching silicon substrate - to mfr. IMPATT, beam-lead Schottky battery and PIN diodes
US5580828A (en) * 1992-12-16 1996-12-03 Semiconductor Physics Laboratory Rt Method for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor material
CA2264908C (en) 1996-09-06 2006-04-25 Obducat Ab Method for anisotropic etching of structures in conducting materials
DE19710375C2 (en) * 1997-03-13 2002-11-07 Micronas Semiconductor Holding Process for the production of spatially structured components
US20060207890A1 (en) 2005-03-15 2006-09-21 Norbert Staud Electrochemical etching
US7569490B2 (en) 2005-03-15 2009-08-04 Wd Media, Inc. Electrochemical etching

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689389A (en) * 1969-12-16 1972-09-05 Bell Telephone Labor Inc Electrochemically controlled shaping of semiconductors
BE789090A (en) * 1971-09-22 1973-01-15 Western Electric Co SEMICONDUCTOR ATTACK METHOD AND SOLUTION
US3898141A (en) * 1974-02-08 1975-08-05 Bell Telephone Labor Inc Electrolytic oxidation and etching of III-V compound semiconductors
IT1027470B (en) * 1974-02-08 1978-11-20 Western Electric Co PROCEDURE FOR THE THINNING OF A LAYER OF SEMICON DUCTOR MATERIAL
US4026741A (en) * 1976-06-16 1977-05-31 Bell Telephone Laboratories, Incorporated Technique for preparation of stoichiometric III-V compound semiconductor surfaces
DD241975A1 (en) * 1985-10-14 1987-01-07 Messgeraetewerk Zwonitz Veb K METHOD OF MANUFACTURING SEMICONDUCTOR BODIES WITH INTEGRATED CIRCUIT PARTS AND ASSOCIATED THREE-DIMENSIONAL STRUCTURES
EP0253420A1 (en) * 1986-06-23 1988-01-20 Stiftung Hasler Werke Apparatus and process for electrochemical etching of silicon

Also Published As

Publication number Publication date
WO1989008323A1 (en) 1989-09-08
DE3805752A1 (en) 1989-08-31

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