AU3176693A - Layered crystalline material capable of high guest loading - Google Patents

Layered crystalline material capable of high guest loading

Info

Publication number
AU3176693A
AU3176693A AU31766/93A AU3176693A AU3176693A AU 3176693 A AU3176693 A AU 3176693A AU 31766/93 A AU31766/93 A AU 31766/93A AU 3176693 A AU3176693 A AU 3176693A AU 3176693 A AU3176693 A AU 3176693A
Authority
AU
Australia
Prior art keywords
material capable
crystalline material
layered crystalline
high guest
guest loading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU31766/93A
Inventor
Bogdan P Bahmatyuk
Ivan I Grigortchak
Zahar D Kovalyuk
Ivan D Kozmik
Kornei D Tovstjuk
Victor I Trefilov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BENTON H WILCOXON
Original Assignee
BENTON H WILCOXON
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BENTON H WILCOXON filed Critical BENTON H WILCOXON
Publication of AU3176693A publication Critical patent/AU3176693A/en
Abandoned legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/46Sulfur-, selenium- or tellurium-containing compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Compositions Of Oxide Ceramics (AREA)
AU31766/93A 1991-10-29 1992-10-29 Layered crystalline material capable of high guest loading Abandoned AU3176693A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78452591A 1991-10-29 1991-10-29
US784525 1991-10-29

Publications (1)

Publication Number Publication Date
AU3176693A true AU3176693A (en) 1993-06-07

Family

ID=25132700

Family Applications (1)

Application Number Title Priority Date Filing Date
AU31766/93A Abandoned AU3176693A (en) 1991-10-29 1992-10-29 Layered crystalline material capable of high guest loading

Country Status (8)

Country Link
EP (1) EP0662251A1 (en)
JP (1) JPH07505246A (en)
CN (1) CN1074249A (en)
AU (1) AU3176693A (en)
CA (1) CA2122369A1 (en)
IL (1) IL103583A0 (en)
RU (1) RU94039535A (en)
WO (1) WO1993008981A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4439660B2 (en) * 2000-03-06 2010-03-24 パナソニック株式会社 Nonaqueous electrolyte secondary battery
CN100419130C (en) * 2004-11-03 2008-09-17 中国科学技术大学 Sb2Te3 monocrystalline nanometer line ordered array and its preparation method
KR101680763B1 (en) 2010-03-31 2016-11-29 삼성전자주식회사 Thermoelectric materials, and thermoelectric module and thermoelectric device comprising same
KR101695540B1 (en) 2015-04-14 2017-01-23 엘지전자 주식회사 Thermoelectric materials, and thermoelectric element and thermoelectric module comprising the same
CN113363493A (en) * 2021-06-25 2021-09-07 惠州亿纬锂能股份有限公司 Single crystal ternary positive electrode material, preparation method and battery

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3877988A (en) * 1973-03-21 1975-04-15 Mallory & Co Inc P R Lithium-metal telluride organic electrolyte cell

Also Published As

Publication number Publication date
WO1993008981A2 (en) 1993-05-13
WO1993008981A3 (en) 1993-06-10
IL103583A0 (en) 1993-03-15
RU94039535A (en) 1996-04-27
CA2122369A1 (en) 1993-05-13
CN1074249A (en) 1993-07-14
JPH07505246A (en) 1995-06-08
EP0662251A1 (en) 1995-07-12

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