AU2725300A - A method and apparatus of continuously monitoring and recording parameters associated with pulsed ion beam surface treatment processes - Google Patents

A method and apparatus of continuously monitoring and recording parameters associated with pulsed ion beam surface treatment processes

Info

Publication number
AU2725300A
AU2725300A AU27253/00A AU2725300A AU2725300A AU 2725300 A AU2725300 A AU 2725300A AU 27253/00 A AU27253/00 A AU 27253/00A AU 2725300 A AU2725300 A AU 2725300A AU 2725300 A AU2725300 A AU 2725300A
Authority
AU
Australia
Prior art keywords
surface treatment
ion beam
parameters associated
treatment processes
continuously monitoring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU27253/00A
Inventor
Forest E. White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
QUANTUM MANUFACTURING TECHNOLOGIES Inc
Original Assignee
QUANTUM Manufacturing TECHNOLOGIES Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by QUANTUM Manufacturing TECHNOLOGIES Inc filed Critical QUANTUM Manufacturing TECHNOLOGIES Inc
Publication of AU2725300A publication Critical patent/AU2725300A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • G05B23/0205—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults
    • G05B23/0218—Electric testing or monitoring by means of a monitoring system capable of detecting and responding to faults characterised by the fault detection method dealing with either existing or incipient faults
    • G05B23/0224—Process history based detection method, e.g. whereby history implies the availability of large amounts of data
    • G05B23/0227—Qualitative history assessment, whereby the type of data acted upon, e.g. waveforms, images or patterns, is not relevant, e.g. rule based assessment; if-then decisions
    • G05B23/0229—Qualitative history assessment, whereby the type of data acted upon, e.g. waveforms, images or patterns, is not relevant, e.g. rule based assessment; if-then decisions knowledge based, e.g. expert systems; genetic algorithms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/316—Changing physical properties

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Evolutionary Biology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Measurement Of Radiation (AREA)
AU27253/00A 1999-01-14 2000-01-14 A method and apparatus of continuously monitoring and recording parameters associated with pulsed ion beam surface treatment processes Abandoned AU2725300A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11595599P 1999-01-14 1999-01-14
US60115955 1999-01-14
PCT/US2000/000810 WO2000042633A1 (en) 1999-01-14 2000-01-14 A method and apparatus of continuously monitoring and recording parameters associated with pulsed ion beam surface treatment processes

Publications (1)

Publication Number Publication Date
AU2725300A true AU2725300A (en) 2000-08-01

Family

ID=22364363

Family Applications (1)

Application Number Title Priority Date Filing Date
AU27253/00A Abandoned AU2725300A (en) 1999-01-14 2000-01-14 A method and apparatus of continuously monitoring and recording parameters associated with pulsed ion beam surface treatment processes

Country Status (2)

Country Link
AU (1) AU2725300A (en)
WO (1) WO2000042633A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1391801B1 (en) * 2008-11-21 2012-01-27 Consiglio Nazionale Ricerche METHOD AND EQUIPMENT FOR THE REALIZATION OF FILMS THIN ON A SUBSTRATE USING THE PULSE ELECTRON DEPOSITION PROCESS
CN101824602B (en) * 2010-05-07 2011-08-10 西安理工大学 Magnetron sputtering pulse power supply with high starting voltage

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751393A (en) * 1986-05-16 1988-06-14 Varian Associates, Inc. Dose measurement and uniformity monitoring system for ion implantation
US5572038A (en) * 1993-05-07 1996-11-05 Varian Associates, Inc. Charge monitor for high potential pulse current dose measurement apparatus and method
US5532495A (en) * 1993-11-16 1996-07-02 Sandia Corporation Methods and apparatus for altering material using ion beams

Also Published As

Publication number Publication date
WO2000042633A1 (en) 2000-07-20

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase