AU2555095A - Bipolar transistor for use in linear amplifiers - Google Patents
Bipolar transistor for use in linear amplifiersInfo
- Publication number
- AU2555095A AU2555095A AU25550/95A AU2555095A AU2555095A AU 2555095 A AU2555095 A AU 2555095A AU 25550/95 A AU25550/95 A AU 25550/95A AU 2555095 A AU2555095 A AU 2555095A AU 2555095 A AU2555095 A AU 2555095A
- Authority
- AU
- Australia
- Prior art keywords
- bipolar transistor
- linear amplifiers
- amplifiers
- linear
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
- H01L29/66303—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor with multi-emitter, e.g. interdigitated, multi-cellular or distributed emitter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US31616694A | 1994-09-30 | 1994-09-30 | |
US316166 | 1994-09-30 | ||
PCT/US1995/006479 WO1996010844A1 (en) | 1994-09-30 | 1995-05-22 | Bipolar transistor for use in linear amplifiers |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2555095A true AU2555095A (en) | 1996-04-26 |
Family
ID=23227798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU25550/95A Abandoned AU2555095A (en) | 1994-09-30 | 1995-05-22 | Bipolar transistor for use in linear amplifiers |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0783767A4 (en) |
JP (1) | JPH10509558A (en) |
KR (1) | KR970706613A (en) |
AU (1) | AU2555095A (en) |
WO (1) | WO1996010844A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9807115D0 (en) * | 1998-04-03 | 1998-06-03 | Zetex Plc | Alignment method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60165759A (en) * | 1984-02-07 | 1985-08-28 | Nippon Denso Co Ltd | Integrated circuit element |
US4566176A (en) * | 1984-05-23 | 1986-01-28 | U.S. Philips Corporation | Method of manufacturing transistors |
US5148252A (en) * | 1990-02-13 | 1992-09-15 | Kabushiki Kaisha Toshiba | Bipolar transistor |
US5492844A (en) * | 1993-01-29 | 1996-02-20 | Sgs-Thomson Microelectronics, Inc. | Method of manufacturing increased conductivity base contact/feeders with self-aligned structures |
-
1995
- 1995-05-22 AU AU25550/95A patent/AU2555095A/en not_active Abandoned
- 1995-05-22 WO PCT/US1995/006479 patent/WO1996010844A1/en not_active Application Discontinuation
- 1995-05-22 KR KR1019970702040A patent/KR970706613A/en not_active Application Discontinuation
- 1995-05-22 EP EP95944784A patent/EP0783767A4/en not_active Withdrawn
- 1995-05-22 JP JP8511714A patent/JPH10509558A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0783767A1 (en) | 1997-07-16 |
WO1996010844A1 (en) | 1996-04-11 |
EP0783767A4 (en) | 1997-12-29 |
KR970706613A (en) | 1997-11-03 |
JPH10509558A (en) | 1998-09-14 |
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