AU2360400A - CMOS high-to-low voltage buffer - Google Patents

CMOS high-to-low voltage buffer

Info

Publication number
AU2360400A
AU2360400A AU23604/00A AU2360400A AU2360400A AU 2360400 A AU2360400 A AU 2360400A AU 23604/00 A AU23604/00 A AU 23604/00A AU 2360400 A AU2360400 A AU 2360400A AU 2360400 A AU2360400 A AU 2360400A
Authority
AU
Australia
Prior art keywords
low voltage
voltage buffer
cmos high
cmos
buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU23604/00A
Inventor
D. C. Sessions
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of AU2360400A publication Critical patent/AU2360400A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
AU23604/00A 1998-12-18 1999-12-14 CMOS high-to-low voltage buffer Abandoned AU2360400A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/216,701 US6166580A (en) 1998-12-18 1998-12-18 CMOS high-to-low voltage buffer
US09216701 1998-12-18
PCT/US1999/029588 WO2000038236A1 (en) 1998-12-18 1999-12-14 Cmos high-to-low voltage buffer

Publications (1)

Publication Number Publication Date
AU2360400A true AU2360400A (en) 2000-07-12

Family

ID=22808163

Family Applications (1)

Application Number Title Priority Date Filing Date
AU23604/00A Abandoned AU2360400A (en) 1998-12-18 1999-12-14 CMOS high-to-low voltage buffer

Country Status (5)

Country Link
US (1) US6166580A (en)
EP (1) EP1142020A1 (en)
JP (1) JP2002533930A (en)
AU (1) AU2360400A (en)
WO (1) WO2000038236A1 (en)

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JP3664224B2 (en) * 1999-12-07 2005-06-22 ローム株式会社 Power drive circuit
JP2002142295A (en) * 2000-10-30 2002-05-17 Star Micronics Co Ltd Capacitor microphone
US6639827B2 (en) * 2002-03-12 2003-10-28 Intel Corporation Low standby power using shadow storage
JP4020680B2 (en) * 2002-04-12 2007-12-12 株式会社ルネサステクノロジ Semiconductor integrated circuit
US6731154B2 (en) * 2002-05-01 2004-05-04 International Business Machines Corporation Global voltage buffer for voltage islands
US20040032284A1 (en) * 2002-06-13 2004-02-19 Stmicroelectronics Pvt. Ltd. Digital electronic circuit for translating high voltage levels to low voltage levels
JP4286041B2 (en) * 2002-07-15 2009-06-24 株式会社ルネサステクノロジ Semiconductor device
US7327168B2 (en) 2002-11-20 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2004055987A1 (en) * 2002-12-13 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display apparatus using the same
KR101114892B1 (en) 2002-12-25 2012-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Digital circuit having correction circuit and electronic instrument having same
JP3910568B2 (en) * 2003-08-14 2007-04-25 富士通株式会社 Level down converter
JP3902598B2 (en) 2004-02-19 2007-04-11 エルピーダメモリ株式会社 Semiconductor circuit device
TWI327824B (en) * 2005-11-29 2010-07-21 Mstar Semiconductor Inc Dual gate oxide analog circuit architecture with dual voltage supplies and associated method
US7801504B2 (en) * 2005-12-08 2010-09-21 Qualcomm Incorporated Common-gate common-source transconductance stage for RF downconversion mixer
US8294510B2 (en) * 2006-12-26 2012-10-23 Renesas Electronics Corporation CMOS circuit and semiconductor device with multiple operation mode biasing
KR101413650B1 (en) * 2008-01-16 2014-07-01 삼성전자주식회사 Buffer amplifier consuming low dynamic power not deteriorating offset characteristic and display driver comprising the buffer amplifier
US8723581B1 (en) * 2013-01-30 2014-05-13 Via Technologies, Inc. Input buffers
JP2016195212A (en) * 2015-04-01 2016-11-17 株式会社東芝 Semiconductor integrated circuit
US9536593B1 (en) * 2016-05-23 2017-01-03 Qualcomm Incorporated Low power receiver with wide input voltage range
US10554112B1 (en) * 2019-04-04 2020-02-04 Navitas Semiconductor, Inc. GaN driver circuit
US10601302B1 (en) 2019-04-04 2020-03-24 Navitas Semiconductor, Inc. Bootstrap power supply circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4191898A (en) * 1978-05-01 1980-03-04 Motorola, Inc. High voltage CMOS circuit
JPS63105522A (en) * 1986-10-22 1988-05-10 Nec Corp High voltage digital signal output circuit
US5270944A (en) * 1988-06-09 1993-12-14 Hitachi, Ltd. Semiconductor integrated circuit device and process for manufacturing the same
JPH02140971A (en) * 1988-11-22 1990-05-30 Nec Corp Mos integrated circuit device
US5801396A (en) * 1989-01-18 1998-09-01 Stmicroelectronics, Inc. Inverted field-effect device with polycrystalline silicon/germanium channel
JPH0485868A (en) * 1990-07-26 1992-03-18 Hitachi Ltd Semiconductor integrated circuit
JP2701546B2 (en) * 1991-01-18 1998-01-21 日本電気株式会社 Charge transfer device having signal charge detection circuit
JPH05315555A (en) * 1992-05-14 1993-11-26 Nec Corp Semiconductor integrated circuit
JPH05326863A (en) * 1992-05-15 1993-12-10 Nec Corp Semiconductor integrated circuit
US5534801A (en) * 1994-01-24 1996-07-09 Advanced Micro Devices, Inc. Apparatus and method for automatic sense and establishment of 5V and 3.3V operation
JPH09186244A (en) * 1997-01-21 1997-07-15 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
WO2000038236A1 (en) 2000-06-29
EP1142020A1 (en) 2001-10-10
US6166580A (en) 2000-12-26
JP2002533930A (en) 2002-10-08

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase