AU2021107532A4 - n-type bismuth telluride-based thermoelectric material with modulation structure and preparation method thereof - Google Patents
n-type bismuth telluride-based thermoelectric material with modulation structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses an n-type bismuth telluride-based thermoelectric material with
modulation structure and a preparation method thereof, which comprises n-type Bi2Te3 and
Bi2Te3-xSex mixed powder with the same molar ratio, wherein 0.1<x<0.9, the crystal atomic
internal structure of the n-type bismuth telluride-based thermoelectric material is modulation
structure. The purity of Bi2Te3 powder is >99.99 wt%, which particle size of is 500 [m; The
purity of Bi2Te3-xSex powder is >99.99 wt%, whichparticle size is <500 m, where 0.1<x<0.9;
The method has the characteristics of simple process, short production cycle and high
production efficiency; And the prepared n-type bismuth telluride-based thermoelectric material
with modulation structure has high purity, low thermal conductivity and high electrical
conductivity, has a modulation structure, and can synergistically improve carrier concentration
and mobility.
Modulated structure General structure
V, o~ Sar S .
*0 S 0 0 5
I'm C * 5 55
*S 05 **0*
0 * *
50 0s * 0
a m a **0
Bi2 Tex-,Se,
Figure1I
Description
Modulated structure General structure
V, o~ Sar S
. *0 S 0 5 0 I'm C * 5 55 *S 05 **0*
0 *
* 0 50 0s * am a **0
Bi2 Tex-,Se, Figure1I
N-Type Bismuth Telluride-Based Thermoelectric Material with Modulation
Structure and Preparation Method Thereof
The invention relates to the technical field of thermoelectric materials, in
ptechnologyicular to an n-type bismuth telluride-based thermoelectric material with a
modulation structure and a preparation method thereof.
As a new energy material, thermoelectric materials can directly realize the direct
conversion between thermal energy and electrical energy. The corresponding
thermoelectric devices have simple structure, no transmission parts, no noise and
emission, and are widely used in the fields of computer/communication base station chip
refrigeration, air conditioning, refrigerator, aerospace/polar exploration equipment power
supply, etc., which is a hot spot in the current material research field. The most important
criterion for evaluating thermoelectric materials is dimensionless thermoelectric figure of
merit (ZT), ZT = (S'o/) T, where S is Seebeck coefficient, a is electrical conductivity, K
is thermal conductivity, and T is absolute temperature. The dimensionless thermoelectric
figure of merit is higher, the corresponding thermoelectric conversion efficiency is
higher. Materials with high thermoelectric performance should have high electromotive
force, high conductivity and low thermal conductivity. The electrical conductivity is
determined by carrier concentration and mobility, a = enp, where e is electron charge, n is
carrier concentration and p is carrier mobility.
At present, there are about 200 thermoelectric material systems, among which
bismuth telluride-based thermoelectric materials are the most widely used. However, at present, domestic bismuth telluride thermoelectric materials, especially n-type bismuth telluride-based thermoelectric materials, have a single structure, which has the problem that carrier concentration and mobility cannot be promoted synergistically, which limits the improvement of thermoelectric performance. Therefore, the present invention proposes an n-type bismuth telluride-based thermoelectric material with modulation structure and its preparation method to solve the problems in the prior art.
In view of the above problems, it is an object of the present invention to propose an
n-type bismuth telluride-based thermoelectric material with modulation structure and a
preparation method thereof. The n-type bismuth telluride-based thermoelectric material
prepared by the n-type bismuth telluride-based thermoelectric material with modulation
structure and the preparation method thereof have modulation structure, and can realize
synergistic improvement of carrier concentration and mobility.
To realize the purpose of the invention, the invention is realized by the following
technical scheme: The n-type bismuth telluride-based thermoelectric material with
modulation structure comprises n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal
molar ratio, wherein 0.1<xS0.9, and the crystal atom internal structure of the n-type
bismuth telluride-based thermoelectric material with modulation structure is a modulation
structure.
The further improvement is that the purity of Bi2Te3 powder is >99.99 wt%, which
partical size is 500 m; The purity of Bi2Te3-xSex powder is >99.99 wt%, and its partical
size is 500 m, where 0.1<x0.9.
The preparation method of an n-type bismuth telluride-based thermoelectric material
with a modulation structure comprises the following steps:
Step 1, batching according to the molar ratio of n-type Bi2Te3 and Bi2Te3-xSex of 1:1,
wherein 0.1<x<0.9, and then uniformly mixing to obtain mixed powder;
Step 2, putting the mixed powder into a ball milling tank, and ball milling for 1-12
hours under inert atmosphere conditions to prepare n-type Bi2Te3 and Bi2Te3-xSex mixed
powder with equal molar ratio, wherein 0.1<x<0.9;
Step 3, loading the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal molar
ratio into a mold, wherein 0.1<xS0.9, placing in a plasma activation sinter furnace, then
simultaneously raising temperature and pressure at a constant speed, simultaneously
raising the temperature to 400-550°C and the pressure to 30~100 MPa, keeping the
temperature and pressure for 3-20 minutes, and simultaneously reducing the temperature
at a constant speed;
Step 4, taking out the sintered mold and demoulding to obtain the n-type bismuth
telluride-based thermoelectric material with the modulation structure.
About the further improvement, first of all, n-type Bi2Te3 and Bi2Te3-xSex powder
prepared in Step 1 are weigh and mixed in an equal molar ratio, wherein 0.1<x0.9.
Secondly the ball milling tank equipment in the Step 2 is a high-energy planetary ball
mill, the mass ratio of ball to material is (10-30):1, and the rotating speed of the high
energy planetary ball mill is 100~600 r/min. At last, in Step 3, the rate of uniform heating
is 10-100°C/min, and the rate of uniform cooling is 1050°C/min.
The invention has the beneficial effects that:
1. In the invention, n-type Bi2Te3 and Bi2Te3-xSex powder are used as raw materials,
wherein 0.1<x<0.9, and the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal
molar ratio can be obtained by ball milling for 1-12 hours; The shortest time of plasma
activation sintering is only 18 min, that is, the n-type bismuth telluride-based
thermoelectric material with modulation structure can be quickly prepared in a short time.
The relative density of the prepared n-type bismuth telluride-based thermoelectric
material with modulation structure exceeds 97%, which has the characteristics of simple
process, short production cycle, high production efficiency, high product purity and high
density;
2. The n-type bismuth telluride-based thermoelectric material with modulation
structure prepared by mechanical alloying combined with plasma activation sintering
technology not only has fine and lamellar grains, but also can form dispersed nano
phases, which can effectively reduce the thermal conductivity ofthe thermoelectric
material;
3. The n-type bismuth telluride-based thermoelectric material prepared by the
invention has a modulation structure, that is, a modulation mixed structure including the
advantages of these two samples, one with high carrier concentration and low mobility
and the other sample with low carrier concentration and high mobility, which enables the
sample to have relatively high carrier concentration. At the same time, carriers tend to
migrate to a high mobility region, so high mobility is also integrated, and relatively high
carrier concentration and high mobility can be maintained.
To sum up, the method has the characteristics of simple process, short production
cycle and high production efficiency; and the prepared n-type bismuth telluride-based thermoelectric material with modulation structure has the characteristics of high purity, low thermal conductivity and high conductivity, also has modulation structure, and can synergistically improve carrier concentration and mobility.
Figure 1 is a schematic diagram of the modulation structure of the present invention.
In order to enhance the understanding of the present invention, the present invention
will be further described in detail with examples below. This example is only used to
explain the present invention, and does not constitute a limitation on the scope of
protection of the present invention.
According to Figure 1, this example provides an n-type bismuth telluride-based
thermoelectric material with modulation structure, in which the related materials are
uniformly described as follows:
The purity of Bi2Te3 powder is >99.99 wt%, which particle size is 500 m; The
purity of Bi2Te3-xSex powder is >99.99 wt%, and its particle size is S500 m, where
0.1<x<0.9.
Example 1
Comprising n-type Bi2Te3 and Bi2Te3-xSex mixed powder with that same molar ratio,
wherein 0.1<x<0.9, and the internal structure of the crystal atom of the n-type bismuth
telluride-based thermoelectric material with the modulation structure is a modulation
structure.
The preparation method comprises the following steps:
Step 1, batching is according to the molar ratio of n-type Bi2Te3 and Bi2Te3-xSex of
1:1, wherein 0.1SxS0.9, and then uniformly mixing to obtain mixed powder;
Step 2, putting the mixed powder into a ball milling tank, and ball milling for 1-12
hours under inert atmosphere conditions to prepare n-type Bi2Te3 and Bi2Te3-xSex mixed
powder with equal molar ratio, wherein 0.1<x<0.9;
Step 3, loading the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal molar
ratio into a mold, wherein 0.1<xS0.9, placing in a plasma activation sinter furnace, then
simultaneously raising temperature and pressure at a constant speed, simultaneously
raising the temperature to 400-550°C and the pressure to 30~100 MPa, keeping the
temperature and pressure for 3-20 minutes, and simultaneously reducing the temperature
at a constant speed;
Step 4, taking out the sintered mold and demoulding to obtain the n-type bismuth
telluride-based thermoelectric material with the modulation structure.
The ball milling equipment is a high-energy planetary ball mill, the mass ratio of
ball to material is (10-30): 1, and the rotating speed of the high-energy planetary ball mill
is 100~600 r/min.
The constant-speed heating rate is 10-100'C/min; The uniform cooling rate is
-50'C/min;
The n-type Bi2Te3 and Bi2Te3-xSex powder prepared in the first step are weighed and
mixed in an equal molar ratio, wherein 0.1xS0.9.
The n-type bismuth telluride-based thermoelectric material prepared in this example
has high purity, low thermal conductivity and high electrical conductivity, has a
modulation structure, and can synergistically improve carrier concentration and mobility.
Example 2
Comprising n-type Bi2Te3 and Bi2Te3-xSex mixed pow with that same molar ratio,
wherein 0.1<x<0.4, and the internal structure of the crystal atom of the n-type bismuth
telluride-based thermoelectric material with the modulation structure is a modulation
structure.
The preparation method comprises the following steps:
Step 1, batching according to the molar ratio of n-type Bi2Te3 and Bi2Te3-xSex of 1:1,
wherein 0.1<x<O.4, and then uniformly mixing to obtain mixed powder;
Step 2, putting the mixed powder into a ball milling tank, and ball milling for 1-6
hours under inert atmosphere to obtain n-type Bi2Te3 and Bi2Te3-xSex mixed powder with
equal molar ratio, wherein 0.1x<<0.4;
Step 3, loading the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal molar
ratio into a mold, wherein 0.1<x<0.4, placing in a plasma activation sinter furnace, then
simultaneously raising temperature and pressure at a constant speed, simultaneously
raising the temperature to 400-500°C and the pressure to 30-50 MPa, keeping the
temperature and maintaining the pressure for 3-6 min, and simultaneously reducing the
temperature at a constant speed;
Step 4, taking out the sintered mold and demoulding to obtain the n-type bismuth
telluride-based thermoelectric material with the modulation structure.
The ball milling equipment is a high-energy planetary ball mill, the mass ratio of
ball to material is (10-20):1, and the rotating speed of the high-energy planetary ball mill
is 100-200 r/min.
The constant-speed heating rate is 10-50°C/min; The uniform cooling rate is
-20'C/min;
The n-type Bi2Te3 and Bi2Te3-xSex powder prepared in the first step are weighed and
mixed in an equal molar ratio, wherein 0.1xO.4.
The n-type bismuth telluride-based thermoelectric material prepared in this example
has high purity, low thermal conductivity and high electrical conductivity, has a
modulation structure, and can synergistically improve carrier concentration and mobility.
Example 3
Comprising n-type Bi2Te3 and Bi2Te3-xSex mixed pow with that same molar ratio,
wherein 0.2<x<0.5, and the internal structure of the crystal atom of the n-type bismuth
telluride-based thermoelectric material with the modulation structure is a modulation
structure.
The preparation method comprises the following steps:
Step 1, batching according to the molar ratio of n-type Bi2Te3 and Bi2Te3-xSex of 1:
1, wherein 0.2<xS0.5, and then uniformly mixing to obtain mixed powder;
Step 2, putting the mixed powder into a ball milling tank, and ball milling for 2-7h
under inert atmosphere to obtain n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal
molar ratio, wherein 0.2xS0.5;
Step 3, loading the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal molar
ratio into a mold, wherein 0.2<xS0.5, placing in a plasma activation sintering furnace,
then simultaneously raising temperature and pressure at a constant speed, simultaneously
raiseing the temperature to 410-510C and the pressure to 40-60 MPa, keeping the temperature and pressure for 5-9 min, and simultaneously reducing the temperature at a constant speed;
Step 4, taking out the sintered mold and demoulding to obtain the n-type bismuth
telluride-based thermoelectric material with the modulation structure.
The ball milling equipment is a high-energy planetary ball mill, the mass ratio of
ball to material is (20-30):1, and the rotating speed of the high-energy planetary ball mill
is 200-300 r/min.
The constant-speed heating rate is 20-60°C/min; The uniform cooling rate is
-30°C/min; The n-type Bi2Te3 and Bi2Te3-xSex powder prepared in the first step are
weighed and mixed in an equal molar ratio, wherein 0.2<x<0.5.
The n-type bismuth telluride-based thermoelectric material prepared in this example
has high purity, low thermal conductivity and high electrical conductivity, has a
modulation structure, and can synergistically improve carrier concentration and mobility.
Example 4
Comprising n-type Bi2Te3 and Bi2Te3-xSex mixed pow with that same molar ratio,
wherein 0.3<x<0.6, and the internal structure of the crystal atom of the n-type bismuth
telluride-based thermoelectric material with the modulation structure is a modulation
structure.
The preparation method comprises the following steps:
Step 1, batching according to the molar ratio of n-type Bi2Te3 and Bi2Te3-xSex of 1:1,
wherein 0.3<x<0.6, and then uniformly mixing to obtain mixed powder;
Step 2, putting the mixed powder into a ball milling tank, and ball milling for 3-8
hours under inert atmosphere to obtain n-type Bi2Te3 and Bi2Te3-xSex mixed powder with
equal molar ratio, wherein 0.3<x<0.6;
Step 3, loading the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal molar
ratio into a mold, wherein 0.3<x<0.6, placing in a plasma activation sintering furnace,
then simultaneously raising temperature and pressure at a constant speed, simultaneously
raising the temperature to 420-520°C and the pressure to 50-70 MPa, keeping the
temperature and maintaining the pressure for 7-12 min, and simultaneously reducing the
temperature at a constant speed;
Step 4, taking out the sintered mold and demoulding to obtain the n-type bismuth
telluride-based thermoelectric material with the modulation structure.
The ball milling equipment is a high-energy planetary ball mill, the mass ratio of
ball to material is (10-20):1, and the rotating speed of the high-energy planetary ball mill
is 300~400 r/min.
The constant-speed heating rate is 30-70°C/min; The uniform cooling rate is
~40°C/min; The n-type Bi2Te3 and Bi2Te3-xSex powder prepared in the first step are
weighed and mixed in an equal molar ratio, wherein 0.3<x<0.6.
The n-type bismuth telluride-based thermoelectric material prepared in this example
has high purity, low thermal conductivity and high electrical conductivity, has a
modulation structure, and can synergistically improve carrier concentration and mobility.
Example 5
Comprising n-type Bi2Te3 and Bi2Te3-xSex mixed pow with that same molar ratio,
wherein 0.4<x<0.7, and the internal structure of the crystal atom of the n-type bismuth telluride-based thermoelectric material with the modulation structure is a modulation structure.
The preparation method comprises the following steps:
Step 1, batching according to the molar ratio of n-type Bi2Te3 and Bi2Te3-xSex of 1:
1, wherein 0.4<xS0.7, and then uniformly mixing to obtain mixed powder;
Step 2, putting the mixed powder into a ball milling tank, and ball milling for 1-12
hours under inert atmosphere conditions to prepare n-type Bi2Te3 and Bi2Te3-xSex mixed
powder with equal molar ratio, wherein 0.4<x<0.7;
Step 3, loading the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal molar
ratio into a mold, wherein 0.4<xS0.7, placing in a plasma activation sinter furnace, and
then simultaneously raising temperature and pressure at a constant speed, simultaneously
raising the temperature to 430-530°C and the pressure to 60-80 MPa, keeping the
temperature and maintaining the pressure for 9-15 min, and simultaneously reducing the
temperature at a constant speed;
Step 4, taking out the sintered mold and demoulding to obtain the n-type bismuth
telluride-based thermoelectric material with the modulation structure.
The ball milling equipment is a high-energy planetary ball mill, the mass ratio of
ball to material is (20-30):1, and the rotating speed of the high-energy planetary ball mill
is 400-500 r/min.
The constant-speed heating rate is 40-80°C/min; The uniform cooling rate is
-50'C/min; The n-type Bi2Te3 and Bi2Te3-xSex powder prepared in the first step are
weighed and mixed in an equal molar ratio, wherein 0.4<xS0.7.
The n-type bismuth telluride-based thermoelectric material prepared in this example
has high purity, low thermal conductivity and high electrical conductivity, has a
modulation structure, and can synergistically improve carrier concentration and mobility.
Example 6
Comprising n-type Bi2Te3 and Bi2Te3-xSex mixed pow with that same molar ratio,
wherein 0.6<x<0.9, and the internal structure of the crystal atom of the n-type bismuth
telluride-based thermoelectric material with the modulation structure is a modulation
structure.
The preparation method comprises the following steps:
Step 1, batching according to the molar ratio of n-type Bi2Te3 and Bi2Te3-xSex of 1:
1, wherein 0.6<x<0.9, and then uniformly mixing to obtain mixed powder;
Step 2, putting the mixed powder into a ball milling tank, and ball milling for 1-12
hours under inert atmosphere conditions to prepare n-type Bi2Te3 and Bi2Te3-xSex mixed
powder with equal molar ratio, wherein 0.6<x<0.9;
Step 3, loading the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal molar
ratio into a mold, wherein 0.6<x<0.9, placing in a plasma activation sinter furnace, then
simultaneously raising temperature and pressure at a constant speed, simultaneously
raising the temperature to 440-540°C and the pressure to 70-90 MPa, keeping the
temperature and pressure for 11~18 min, and simultaneously reducing the temperature at
a constant speed;
Step 4, taking out the sintered mold and demoulding to obtain the n-type bismuth
telluride-based thermoelectric material with the modulation structure.
The ball milling equipment is a high-energy planetary ball mill, the mass ratio of
ball to material is (10-20):1, and the rotating speed of the high-energy planetary ball mill
is 500~600 r/min.
The constant-speed heating rate is 50-90°C/min; The uniform cooling rate is
-50'C/min; The n-type Bi2Te3 and Bi2Te3-xSex powder prepared in the first step are
weighed and mixed in an equal molar ratio, wherein 0.5<xS0.8.
The n-type bismuth telluride-based thermoelectric material prepared in this example
has high purity, low thermal conductivity and high electrical conductivity, has a
modulation structure, and can synergistically improve carrier concentration and mobility.
Example 7
Comprising n-type Bi2Te3 and Bi2Te3-xSex mixed pow with that same molar ratio,
wherein 0.6<x<0.9, and the internal structure of the crystal atom of the n-type bismuth
telluride-based thermoelectric material with the modulation structure is a modulation
structure.
The preparation method comprises the following steps:
Step 1, batching according to the molar ratio of n-type Bi2Te3 and Bi2Te3-xSex of 1:1,
wherein 0.6<x<0.9, and then uniformly mixing to obtain mixed powder;
Step 2, putting the mixed powder into a ball milling tank, and ball milling for 1-12
hours under inert atmosphere conditions to prepare n-type Bi2Te3 and Bi2Te3-xSex mixed
powder with equal molar ratio, wherein 0.6<x<0.9;
Step 3, loading the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal molar
ratio into a mold, wherein 0.6<xS0.9, placing in a plasma activation sinter furnace, then
simultaneously raising temperature and pressure at a constant speed, simultaneously raising the temperature to 450-550°C and raising the pressure to 80-100 MPa, keeping the temperature and maintaining the pressure for 13-20 minutes, and simultaneously reducing the temperature at a constant speed;
Step 4, taking out the sintered mold and demoulding to obtain the n-type bismuth
telluride-based thermoelectric material with the modulation structure.
The ball milling equipment is a high-energy planetary ball mill, the mass ratio of
ball to material is (20-30):1, and the rotating speed of the high-energy planetary ball mill
is 200-300 r/min.
The constant-speed heating rate is 60-100'C/min; The uniform cooling rate is
-50'C/min; The n-type Bi2Te3 and Bi2Te3-xSex powder prepared in the first step are
weighed and mixed in an equal molar ratio, wherein 0.6<xS0.9.
The n-type bismuth telluride-based thermoelectric material prepared in this example
has high purity, low thermal conductivity and high electrical conductivity, has a
modulation structure, and can synergistically improve carrier concentration and mobility.
According to Examples 1 to 7, compared with the prior art, the invention has the
following positive effects:
1.In the invention, n-type Bi2Te3 and Bi2Te3-xSex powder are used as raw materials,
wherein 0.1<x<0.9, and the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal
molar ratio can be obtained by ball milling for 1~12 hours; The shortest time of plasma
activation sintering is only 18 min, that is, the n-type bismuth telluride-based
thermoelectric material with modulation structure can be quickly prepared in a short time.
The relative density of the prepared n-type bismuth telluride-based thermoelectric
material with modulation structure exceeds 97%, which has the characteristics of simple process, short production cycle, high production efficiency, high product purity and high density;
2. The n-type bismuth telluride-based thermoelectric material with modulation
structure prepared by mechanical alloying combined with plasma activation sintering
technology not only has fine and lamellar grains, but also can form dispersed nano
phases, which can effectively reduce the thermal conductivity ofthe thermoelectric
material;
3. The n-type bismuth telluride-based thermoelectric material prepared by the
invention has a modulation structure, that is, a modulation mixed structure including the
advantages of these two samples, one with high carrier concentration and low mobility
and the other sample with low carrier concentration and high mobility, which enables the
sample to have relatively high carrier concentration. At the same time, carriers tend to
migrate to a high mobility region, so high mobility is also integrated, and relatively high
carrier concentration and high mobility can be maintained.
To sum up, the method has the characteristics of simple process, short production
cycle and high production efficiency; and the prepared n-type bismuth telluride-based
thermoelectric material with modulation structure has the characteristics of high purity,
low thermal conductivity and high conductivity, also has modulation structure, and can
synergistically improve carrier concentration and mobility.
The above shows and describes the basic principles, main features and advantages of
the present invention. It should be understood by those skilled in the technology that the
present invention is not limited by the above examples. The above examples and
descriptions only illustrate the principles of the present invention. Without deptechnologying from the spirit and scope of the present invention, there will be various changes and improvements in the present invention, all of which fall within the scope of the claimed invention. The claim scope of that present invention is defined by the append claims and their equivalents.
Claims (3)
1. An n-type bismuth telluride-based thermoelectric material with modulated
structure, which is characterized by comprising n-type Bi2Te3 and Bi2Te3-xSex mixed
powder with equal molar ratio, wherein the purity of Bi2Te3 powder is >99.99 wt%, the
particle size of Bi2Te3 powder is <500 m, the purity of Bi2Te3-xSex powder is >99.99
wt%, the Bi2Te3-xSex powder is >99.99 wt%, the particle size of Bi2Te3-xSex powder is
<500 pm, wherein 0.1<x<0.9, and the internal structure of the crystal atom of the n-type
bismuth telluride-based thermoelectric material with the modulation structure is a
modulation structure, and the preparation steps are as follows:
Step 1: Batching according to the molar ratio of n-type Bi2Te3 and Bi2Te3-xSex of
1:1, wherein 0.1 xO.9, and then uniformly mixing to obtain mixed powder;
Step 2: Putting the mixed powder into a ball milling tank, and ball milling for 1-12
hours under inert atmosphere to obtain n-type Bi2Te3 and Bi2Te3-xSex mixed powder with
equal molar ratio, wherein 0.1 x<0.9;
Step 3: Loading the n-type Bi2Te3 and Bi2Te3-xSex mixed powder with equal molar
ratio into a mold, wherein 0.1<x<0.9, placing in a plasma activation sinter furnace, then
simultaneously raising temperature and pressure at a constant speed, simultaneously
raising the temperature to 400-550°C and the pressure to 30-100 MPa, keeping the
temperature and pressure for 3-20 minutes, and simultaneously reducing the temperature
at a constant speed;
Step 4: Taking out the sintered mold and demoulding to obtain the n-type bismuth
telluride-based thermoelectric material with the modulation structure.
2. The n-type bismuth telluride-based thermoelectric material with modulation
structure according to claim 1, characterized in that the ball milling tank equipment in
Step 2 is a high-energy planetary ball mill, the mass ratio of ball to material is (10-30):1,
and the rotating speed of the high-energy planetary ball mill is 100~600 r/min.
3. The n-type bismuth telluride-based thermoelectric material with modulation
structure according to claim 1, which is characterized in that in the third step, the rate of
constant temperature rise is 10-100°C/min, and the rate of constant temperature drop is
-50°C/min.
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| CN113314660A (en) * | 2021-07-30 | 2021-08-27 | 深圳见炬科技有限公司 | Method for synthesizing porous thermoelectric material based on melting centrifugation and porous thermoelectric material |
| CN114561706A (en) * | 2021-12-16 | 2022-05-31 | 杭州大和热磁电子有限公司 | Method for recycling bismuth telluride crystal bar processing waste and utilization method thereof |
| CN115216846B (en) * | 2022-05-26 | 2023-11-24 | 杭州大和热磁电子有限公司 | P-type bismuth telluride alloy material, preparation method and application thereof |
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| CN115305567B (en) * | 2022-08-05 | 2024-02-13 | 中国电子科技集团公司第十八研究所 | Method for improving performance uniformity of hot extrusion N-type bismuth telluride |
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