AU2021105735A4 - An Eu3+ Doped Phosphor Chemical Compound for An Electroluminescence Related Applications and A Method for Synthesis of The Compound - Google Patents
An Eu3+ Doped Phosphor Chemical Compound for An Electroluminescence Related Applications and A Method for Synthesis of The Compound Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 150000001875 compounds Chemical class 0.000 title claims abstract description 19
- 238000005401 electroluminescence Methods 0.000 title claims abstract description 17
- -1 Phosphor Chemical Compound Chemical class 0.000 title claims abstract description 15
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 11
- 238000003786 synthesis reaction Methods 0.000 title claims abstract description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 24
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 18
- 230000007704 transition Effects 0.000 claims abstract description 7
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004327 boric acid Substances 0.000 claims abstract description 6
- 238000001354 calcination Methods 0.000 claims abstract description 6
- 230000004907 flux Effects 0.000 claims abstract description 6
- 238000000227 grinding Methods 0.000 claims abstract description 6
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 238000000295 emission spectrum Methods 0.000 claims abstract description 3
- 239000002245 particle Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 230000004044 response Effects 0.000 claims description 2
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 229910007659 ZnSi2 Inorganic materials 0.000 abstract 1
- 230000008901 benefit Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 5
- 238000000024 high-resolution transmission electron micrograph Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 229910017639 MgSi Inorganic materials 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77342—Silicates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Materials Engineering (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present disclosure relates toanEu3+ doped phosphor chemical compound for an
electroluminescence related applications and a method for synthesis of the compound. The
compound comprises: Ba2ZnSi207 :Eu
3. The method comprises: mixing a starting reagents
comprising 2BaCO 3, ZnO, SiO2 , and Eu 2O3;grinding the starting reagents intermediately for
12 hours using an acetone; calcining a mixture of the starting reagents and the acetone at
1000°C for 2 hours utilizing boric acid as a flux; and sintering at 1250°C for 4 hours resulting
in a powdered Ba2ZnSi2O 7:Eu
w herein, the Eu3 * doped Ba2ZnSi2 O7 phosphor exhibits good
electroluminescence characteristics wherein, the Eu 3+ doped Ba2 ZnSi2 07 phosphor shows a
maximum electroluminescence brightness at 1.5 mol% of Eu3+ ion and wherein, a PL
emission spectra of Eu3+ doped Ba2ZnSi207 phosphor was centered at 580 nm, 592 nm and
614 nm which shows both, a magnetic dipole transition and an electric dipole transition.
9
100
mixing a starting reagents comprising 2BaCO, ZnO, SiO2, and Eu203; 102
grinding the starting reagents intermediately for 12 hours using an
acetone; 104
calcining a mixture of the starting reagents and the acetone at 1000T1C0
for 2 hours utilizing boric acid as a flux; and
4W
sintering at 1250°Cfor 4 hours resulting in a powdered Ba 2ZnSi2Q7:Eu*. 108
Figure 1
(c)
Figure 2
Description
mixing a starting reagents comprising 2BaCO, ZnO,SiO2, and Eu 2 03; 102
grinding the starting reagents intermediately for 12 hours using an acetone; 104
calcining a mixture of the starting reagents and the acetone at 1000T1C0 for 2 hours utilizing boric acid as a flux; and
4W sintering at 1250°Cfor 4 hours resulting in a powdered Ba 2ZnSi2Q7:Eu*. 108
Figure 1
(c) Figure 2
An Eu3+ Doped Phosphor Chemical Compound for An Electroluminescence Related Applications and A Method for Synthesis of The Compound
FIELD OF THE INVENTION The present disclosure relates to anEu3 + doped phosphor chemical compound for an electroluminescence related applications and a method for synthesis of the compound.
With a line type spectra and f-f transition, rare earth doped elements play an essential
role in photovoltaic and optoelectronics applications, such as LASER applications, light
emitting diode (LED) applications, and biomedical applications. In the visible area, GaN
phosphor doped with rare earth ions exhibits a variety of emission peaks. For (intrinsic)
optical and electrical applications, the wide band-gap phenomena have already been
described for GaN doped with rare earth ions. Similarly, Eu3+ doped phosphors show
multiple emission peaks in the infrared range, with the strongest peak centered at 612 nm
(800-1100 nm). Many projects are underway to develop flexible electroluminescence devices,
and the organic light emitting diode has been designated as a new field for foldable lights and
displays.
The creation of novel phosphor materials has been aided by europium. While many
materials have been thoroughly optimised for use in - now mostly defunct - CRTs and
fluorescent lamps, there is still plenty of space for material development in other applications.
White LEDs with phosphorus conversion are now a mature technology with efficacies
exceeding 100 lum/W. Eu is required as a dopant for red emission in good colour rendering
devices, and advances in materials processing are projected to generate phosphors that are
close to optimum in the coming years.
In order to make the existing solutions more efficient there is need to develop anEu* doped phosphor chemical compound for an electroluminescence related applications and a method for synthesis of the compound.
SUMMARY OF THE INVENTION The present disclosure anEu 3 + doped phosphor chemical compound for an electroluminescence related applications and a method for synthesis of the compound. An 3 improved solid state synthesis method is used to synthesize the Ba2ZnSi2 7 :Eu +phosphor. Powder X-ray diffraction analysis was used to investigate the structural properties and phase purity of the Ba2ZnSi 2O 7:Eu 3+phosphors (PXRD). Transmission Electron Microscopy (TEM) was used to examine morphology and particle size, and the results revealed the production of nano-rods, confirming the materials' nano-range. The electroluminescence behavior of Ba2ZnSi 2O 7 :Eu3+phosphors was investigated at various frequencies and doping ion concentrations. Indoor lighting applications benefit greatly from the synthesized phosphor. Excitation and emission spectra of photoluminescence were also observed for different dopantconcentrations.
In an embodiment, an Eu doped phosphor chemical compound for an electroluminescence related applicationscomprises:Ba 2ZnSi O 3 2 7 :Eu
. In an embodiment, a method 100 for a synthesis of the Eu3 + doped phosphor chemical compound for the electroluminescence related applications comprises the following steps: at step 102, mixing a starting reagents comprising 2BaCO 3 , ZnO, SiO 2 , and Eu 20 3 ;at step 104, grinding the starting reagents intermediately for 12 hours using an acetone; at step 106, calcining a mixture of the starting reagents and the acetone at 1000°C for 2 hours utilizing boric acid as a flux; and at step 108, sintering at 1250°C for 4 hours resulting in a powdered Ba2ZnSi 2O 7 :Eu.
To further clarify advantages and features of the present disclosure, a more particular description of the invention will be rendered by reference to specific embodiments thereof, which is illustrated in the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. The invention will be described and explained with additional specificity and detail with the accompanying drawings.
BRIEF DESCRIPTION OF FIGURES These and other features, aspects, and advantages of the present disclosure will become better understood when the following detailed description is read with reference to the accompanying drawings in which like characters represent like parts throughout the drawings, wherein:
Figure 1 illustrates a method for synthesis of the Eu3 + doped phosphor chemical compound in accordance with an embodiment of the present disclosure.
Figure 2 illustrates (a) HRTEM images of prepared phosphor Eu (1.5 mol%) doped Ba2 MgSi 2 7 with various resolutions; (b)EL brightness curve of Ba2ZnSi 2 7 :Eu phosphor for different concentration at same frequency; and (c) Voltage current characteristics of 3 Ba2ZnSi 2 7 :Eu for different concentration at same frequency in accordance with an embodiment of the present disclosure.
Further, skilled artisans will appreciate that elements in the drawings are illustrated for simplicity and may not have necessarily been drawn to scale. For example, the flow charts illustrate the method in terms of the most prominent steps involved to help to improve understanding of aspects of the present disclosure. Furthermore, in terms of the construction of the device, one or more components of the device may have been represented in the drawings by conventional symbols, and the drawings may show only those specific details that are pertinent to understanding the embodiments of the present disclosure so as not to obscure the drawings with details that will be readily apparent to those of ordinary skill in the art having benefit of the description herein.
DETAILED DESCRIPTION For the purpose of promoting an understanding of the principles of the invention, reference will now be made to the embodiment illustrated in the drawings and specific language will be used to describe the same. It will nevertheless be understood that no limitation of the scope of the invention is thereby intended, such alterations and further modifications in the illustrated system, and such further applications of the principles of the invention as illustrated therein being contemplated as would normally occur to one skilled in the art to which the invention relates.
It will be understood by those skilled in the art that the foregoing general description and the following detailed description are exemplary and explanatory of the invention and are not intended to be restrictive thereof
Reference throughout this specification to "an aspect", "another aspect" or similar language means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, appearances of the phrase "in an embodiment", "in another embodiment" and similar language throughout this specification may, but do not necessarily, all refer to the same embodiment.
The terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process or method that comprises a list of steps does not include only those steps but may include other steps not expressly listed or inherent to such process or method. Similarly, one or more devices or sub-systems or elements or structures or components proceeded by "comprises...a" does not, without more constraints, preclude the existence of other devices or other sub-systems or other elements or other structures or other components or additional devices or additional sub-systems or additional elements or additional structures or additional components.
Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The system, methods, and examples provided herein are illustrative only and not intended to be limiting.
Embodiments of the present disclosure will be described below in detail with reference to the accompanying drawings.
Referring to Figure 1 illustrates a method for synthesis of the Eu3 + doped phosphor chemical compound in accordance with an embodiment of the present disclosure. The method 100 for a synthesis of the Eu 3 + doped phosphor chemical compound for the electroluminescence related applications comprises the following steps: at step 102, mixing a starting reagents comprising 2BaCO 3, ZnO, SiO2 , and Eu2 0 3 ; at step 104, grinding the starting reagents intermediately for 12 hours using an acetone; at step 106, calcining a mixture of the starting reagents and the acetone at 1000°C for 2 hours utilizing boric acid as a flux; and at step 108, sintering at 1250°C for 4 hours resulting in a powdered Ba2ZnSi 2O 7 :Eu.
Figure 2 illustrates (a) HRTEM images of prepared phosphor Eu (1.5 mol%) doped 7 with various resolutions; (b) EL brightness curve of Ba2ZnSi 2 3 Ba2 MgSi 2 7 :Eu phosphor for different concentration at same frequency; and (c) Voltage current characteristics of Ba2ZnSi 2 7 :Eu for different concentration at same frequency in accordance with an embodiment of the present disclosure.
In an implementation, The HRTEM images reveal the compound's exact particle size and surface shape. The creation of nano-rod-like structures can be seen in HRTEM pictures with varied resolutions (100 nm, 50 nm, 20 nm, and 20 nm with particle size) (Fig. 2a). The particle size distribution is recorded in a 20 nm resolution range of 45.44 nm, 40.55 nm, and 43.37 nm. As a result, the particles are proven to be consistently distributed and should be beneficial for a variety of optoelectronics applications.
The voltage versus brightness curve of Eu3 + doped Ba2ZnSi 207 phosphor for varied 3+ Eu ion concentrations at a specific frequency is shown in Fig. 2b. The brightness rises in a linear relationship with the voltage. The highest degree of brightness was discovered at 1.5 mol percent Eu ion concentration, and it shows linear response with applied voltage, which increases its applicability to indoor lighting systems.
Figure 2c shows the voltage versus current characteristics curve of Eu3+doped Ba2ZnSi 2 7 at various concentrations at a specific frequency. The devices' current-voltage (I V) characteristics are influenced by the strength of the electric field. It is self-evident that as the voltage rises, the current rises in a linear fashion. It is established that the maximum value of current is observed at 1.5 mol percent concentration.
The drawings and the forgoing description give examples of embodiments. Those skilled in the art will appreciate that one or more of the described elements may well be combined into a single functional element. Alternatively, certain elements may be split into multiple functional elements. Elements from one embodiment may be added to another embodiment. For example, orders of processes described herein may be changed and are not limited to the manner described herein. Moreover, the actions of any flow diagram need not be implemented in the order shown; nor do all of the acts necessarily need to be performed. Also, those acts that are not dependent on other acts may be performed in parallel with the other acts. The scope of embodiments is by no means limited by these specific examples. Numerous variations, whether explicitly given in the specification or not, such as differences in structure, dimension, and use of material, are possible. The scope of embodiments is at least as broad as given by the following claims.
Benefits, other advantages, and solutions to problems have been described above with regard to specific embodiments. However, the benefits, advantages, solutions to problems, and any component(s) that may cause any benefit, advantage, or solution to occur or become more pronounced are not to be construed as a critical, required, or essential feature or component of any or all the claims.
Claims (10)
1. AnEu 3+ doped phosphor chemical compound for an electroluminescence related applications, wherein the compound comprises:
Ba 2ZnSi 20 7:Eu3
*
2. The compound as claimed in claim 1, wherein, the Eu3 + doped Ba2ZnSi 2O7 phosphor exhibits good electroluminescence characteristics.
3. The compound as claimed in claim 1, wherein, the Eudoped Ba2ZnSi 2O7 phosphor shows a maximum electroluminescence brightness at 1.5 mol% of Eu ion.
4. The compound as claimed in claim 1, wherein, a PL emission spectra of Eu3 + doped Ba2 ZnSi 2 07 phosphor was centred at 580 nm, 592 nm and 614 nm which shows both, a magnetic dipole transition and an electric dipole transition.
5. The compound as claimed in claim 1, wherein, an intensity of a dominant electric dipole transition of 614 nm and the magnetic dipole transition of 692 nm.
6. The compound as claimed in claim 5, wherein, the Eu3 + doped Ba2ZnSi 2O7 phosphor show deep red emission in a visible region and wherein, the Eu3 + doped Ba 2ZnSi 207 phosphor may be useful for an indoor lighting application.
7. The compound as claimed in claim 1, wherein, a brightness increases linearly with a
voltage applied wherein, highest value of brightness is at 1.5 mol percent
concentration of Eu ion.
8. The compound as claimed in claim 7, wherein, the compound shows a linear response
with the applied voltage leading to an increased applicability of the compound in an
indoor lighting system.
9. The compound as claimed in claim 1, wherein, the particles of the Eu3 + doped
Ba2 ZnSi 2 07 phosphor are rod shaped and uniformly distributed, hence useful for
various practical applications in an optoelectronics.
10. A method for a synthesis of the Eu3 + doped phosphor chemical compound for the electroluminescence related applications, the method comprises:
mixing a starting reagents comprising 2BaCO 3, ZnO, SiO 2 , and Eu 2 0 3 ; grinding the starting reagents intermediately for 12 hours using an acetone; calcining a mixture of the starting reagents and the acetone at 1000°C for 2 hours utilizing boric acid as a flux; and sintering at 1250°C for 4 hours resulting in a powdered Ba2ZnSi 20 7 :Eu.
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