AU2021101790A4 - A process for manufacturing metal oxide-based formaldehyde gas sensor - Google Patents
A process for manufacturing metal oxide-based formaldehyde gas sensor Download PDFInfo
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- AU2021101790A4 AU2021101790A4 AU2021101790A AU2021101790A AU2021101790A4 AU 2021101790 A4 AU2021101790 A4 AU 2021101790A4 AU 2021101790 A AU2021101790 A AU 2021101790A AU 2021101790 A AU2021101790 A AU 2021101790A AU 2021101790 A4 AU2021101790 A4 AU 2021101790A4
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
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Abstract
The present disclosure relates to a process for manufacturing
metal oxide-based formaldehyde gas sensor. Synthesizing Tin
doped Indium oxide (ITO) thin films sensor using the chemical
spray pyrolysis technique with optimized deposition parameters. Tin
doped Indium oxide has been showing considerable interest in the
gas sensor applications. The sensor responds towards very low
concentrations of formaldehyde (10ppm) and its stability and
repeatability are also found very well at room temperature.
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Description
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The present disclosure relates to a process for manufacturing metal oxide-based formaldehyde gas sensor.
Formaldehyde is the carcinogenic organic compound with the chemical formula HCHO and it is also a hazardous indoor pollutant that seriously affects human health. It is extensively used in building materials manufacturing, chemical industry, and can be found as a preservative in paints, wooden articles, medicine, pharmaceutical products, plastics, cosmetics, etc. Household products, cigarette smoke, adhesives, and lacquer are also significant sources of formaldehyde emissions. Formaldehyde may irritate nose and eyes, damage the immune system, central nervous system, blindness, respiratory disease and even may cause death if its exposure levels are higher than 15 ppm.
In one solution, an amino-functionalized carbon nanotube resistance type formaldehyde gas sensor and preparation method thereof is disclosed. The invention discloses an amino functionalized carbon nanotube resistance type formaldehyde gas sensor and a preparation method thereof. The gas-sensitive film is composed of amino-functionalized carbon nanotubes modified by tannic acid and polyethylene mine. The gas sensor can detect formaldehyde gas at normal temperature, is insensitive to humidity, has strong anti interference capability, high response sensitivity and quick response. The preparation method of the gas sensor is simple, easy to control and suitable for batch production, so that the gas sensor can be suitable for sensitive detection of formaldehyde in the fields of industrial production, process control, environment monitoring, modern agricultural production and the like.
In another solution, a kind of formaldehyde gas sensor is disclosed. The present invention provides a kind of formaldehyde gas sensor, it includes air inlet housing, seals shell, air inlet filter membrane, membrane electrode assembly, cavity supporter, anode tap and cathode leg, wherein, air inlet housing is with air inlet, described air inlet filter membrane is fitted outside the air inlet of air inlet housing, sealing shell and be embedded in the closed shell of described air inlet housing one hollow of composition, described anode tap, membrane electrode assembly, cathode leg and cavity supporter are set in turn in described closed shell from left to right. Membrane electrode assembly includes solid polymer electrolyte and is separately positioned on anode and the negative electrode of solid polymer electrolyte both sides, and anode and negative electrode are gas-diffusion electrode, and gas-diffusion electrode includes gas diffusion layers and Catalytic Layer double-decker. Tested gas the most just can be detected by the formaldehyde gas sensor of the present invention, and production cost is low, and service life is long, and detection sensitivity is high, and testing result is stable.
In another solution, a gas-sensitive material for detecting low-concentration formaldehyde at room temperature, preparation method thereof and gas-sensitive sensor is disclosed. The invention provides a gas-sensitive material for detecting low-concentration formaldehyde at room temperature, which comprises the following components in part by weight: the ternary composite material comprises noble metal, metal oxide and functionalized graphene, wherein the molar ratio of the metal oxide to the noble metal is 0.2-5, and the mass of the functionalized graphene is 15-50% of the sum of the mass of the metal oxide and the mass of the noble metal; or the ternary composite material of the noble metal, the metal hydroxide and the functionalized graphene, wherein the molar ratio of the metal hydroxide to the noble metal is 0.2-5, and the mass of the functionalized graphene is 15-50% of the sum of the mass of the metal hydroxide and the mass of the noble metal. Compared with the traditional metal oxide gas-sensitive material, the gas-sensitive material and the gas-sensitive sensor containing the gas-sensitive material do not need a high-temperature working environment, greatly reduce the power consumption and save resources. The material required on each sensor substrate is less, so the material cost is relatively lower, and the industrial implementation of the formaldehyde gas sensor can be facilitated.
However, the existing formaldehyde sensors are not so much effective in detecting the formaldehyde gas. In the view of the forgoing discussion, it is clearly portrayed that there is a need to have a process for manufacturing metal oxide-based formaldehyde gas sensor. SUMMARY OF THE INVENTION
The present disclosure seeks to provide a process for designing and developing a cost-effective ultra-sensitive and reliable formaldehyde gas sensor for the environmental protection and human health.
In an embodiment, a process for manufacturing metal oxide based formaldehyde gas sensor is disclosed. The process comprises: synthesizing Tin doped Indium oxide (ITO) thin films sensor using a chemical spray pyrolysis technique with optimized deposition parameters; and investigating formaldehyde gas sensing measurements at room temperature.
In an embodiment, the chemical spray pyrolysis is used to deposit large area stoichiometric thin films with uniform thickness.
In an embodiment, the chemical spray technique alters a variety of optical and electrical properties of ITO thin films by changing the deposition parameters.
In an embodiment, the deposition parameters are substrate temperature, deposition time, flow rate, substrate-nozzle distance, the concentration of solution which will play a vital role in gas sensing properties.
In an embodiment, the chemical spray technique promotes easy and fast doping of elements into the parent system.
In an embodiment, the Tin doped Indium oxide (ITO) thin films sensor responds for as low as 10ppm concentration of formaldehyde.
An object of the present disclosure is to synthesize of Tin doped Indium oxide (ITO) thin films sensor using the cost-effective chemical spray pyrolysis technique with optimized deposition parameters.
Another object of the present disclosure is to design of Tin doped Indium oxide sensor element and investigated its formaldehyde gas sensing measurements at room temperature.
Another object of the present disclosure is to test its sensitivity, stability and repeatability towards 10 ppm of formaldehyde at room temperature.
Another object of the present disclosure is to develop a low cost formaldehyde sensor to trace low concentrations of formaldehyde vapors existing in the environment to protect human health.
Yet another object of the present invention is to deliver an expeditious and cost-effective process for manufacturing metal oxide-based formaldehyde gas sensor.
To further clarify advantages and features of the present disclosure, a more particular description of the invention will be rendered by reference to specific embodiments thereof, which is illustrated in the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. The invention will be described and explained with additional specificity and detail with the accompanying drawings.
These and other features, aspects, and advantages of the present disclosure will become better understood when the following detailed description is read with reference to the accompanying drawings in which like characters represent like parts throughout the drawings, wherein:
Figure 1 illustrates a flow chart of a process for manufacturing metal oxide-based formaldehyde gas sensor in accordance with an embodiment of the present disclosure; Figure 2 illustrates XRD spectra of ITO thin films in accordance with an embodiment of the present disclosure; Figure 3 illustrates FESEM, Grain size and EDX images of ITO thin films in accordance with an embodiment of the present disclosure; Figure 4 illustrates TEM and SAED images of ITO thin film in accordance with an embodiment of the present disclosure; Figure 5 illustrates selectivity of formaldehyde sensor in accordance with an embodiment of the present disclosure; Figure 6 illustrates repeatability of ITO thin film in accordance with an embodiment of the present disclosure; Figure 7 illustrates response verses time graph of thin film in accordance with an embodiment of the present disclosure; and Figure 8 illustrates resistance verses time graph of the thin film in accordance with an embodiment of the present disclosure.
Further, skilled artisans will appreciate that elements in the drawings are illustrated for simplicity and may not have been necessarily been drawn to scale. For example, the flow charts illustrate the method in terms of the most prominent steps involved to help to improve understanding of aspects of the present disclosure. Furthermore, in terms of the construction of the device, one or more components of the device may have been represented in the drawings by conventional symbols, and the drawings may show only those specific details that are pertinent to understanding the embodiments of the present disclosure so as not to obscure the drawings with details that will be readily apparent to those of ordinary skill in the art having benefit of the description herein.
For the purpose of promoting an understanding of the principles of the invention, reference will now be made to the embodiment illustrated in the drawings and specific language will be used to describe the same. It will nevertheless be understood that no limitation of the scope of the invention is thereby intended, such alterations and further modifications in the illustrated system, and such further applications of the principles of the invention as illustrated therein being contemplated as would normally occur to one skilled in the art to which the invention relates.
It will be understood by those skilled in the art that the foregoing general description and the following detailed description are exemplary and explanatory of the invention and are not intended to be restrictive thereof.
Reference throughout this specification to "an aspect", "another aspect" or similar language means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present disclosure. Thus, appearances of the phrase "in an embodiment", "in another embodiment" and similar language throughout this specification may, but do not necessarily, all refer to the same embodiment.
The terms "comprises", "comprising", or any other variations thereof, are intended to cover a non-exclusive inclusion, such that a process or method that comprises a list of steps does not include only those steps but may include other steps not expressly listed or inherent to such process or method. Similarly, one or more devices or sub-systems or elements or structures or components proceeded by "comprises...a" does not, without more constraints, preclude the existence of other devices or other sub-systems or other elements or other structures or other components or additional devices or additional sub-systems or additional elements or additional structures or additional components.
Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The system, methods, and examples provided herein are illustrative only and not intended to be limiting.
Embodiments of the present disclosure will be described below in detail with reference to the accompanying drawings.
Referring to Figure 1, a flow chart of a process for manufacturing metal oxide-based formaldehyde gas sensor is illustrated in accordance with an embodiment of the present disclosure. At step 102, the process 100 includes synthesizing Tin doped Indium oxide (ITO) thin films sensor using a chemical spray pyrolysis technique with optimized deposition parameters. The chemical spray pyrolysis technique is an atmospheric pressure chemical synthesis of materials, in which a precursor solution of chemical compounds in the proper solvent is sprayed through a furnace.
At step 104, the process 100 includes investigating formaldehyde gas sensing measurements at room temperature.
In an embodiment, the chemical spray pyrolysis is used to deposit large area stoichiometric thin films with uniform thickness.
In an embodiment, the chemical spray technique alters a variety of optical and electrical properties of ITO thin films by changing the deposition parameters.
In an embodiment, the deposition parameters are substrate temperature, deposition time, flow rate, substrate-nozzle distance, the concentration of solution which will play a vital role in gas sensing properties.
In an embodiment, the chemical spray technique promotes easy and fast doping of elements into the parent system.
In an embodiment, the Tin doped Indium oxide (ITO) thin films sensor responds for as low as 10ppm concentration of formaldehyde.
Chemical spray pyrolysis is an effective, versatile and low cost method to deposit large area stoichiometric thin films with uniform thickness. Using this technique, a variety of optical and electrical properties of ITO thin films is altered by changing the deposition parameters involved in this technique, such as substrate temperature, deposition time, flow rate, substrate-nozzle distance, the concentration of solution which will play a vital role in gas sensing properties. It also offers advantages over other depositions techniques such as low cost of the spray system and raw materials and elements can be easily doped into the parent system.
Indium oxide (In 2 O 3 ) thin films have drawn a great deal of attention from researchers worldwide due to their excellent optical and electrical properties. Some metal ions have been used as dopants to enhance optoelectrical properties of the indium oxide thin films. Among all the metal oxides, Tin doped Indium oxide has been showing considerable interest in the gas sensor applications.
The developed sensor responds towards very low concentrations of formaldehyde (10ppm) and its stability and repeatability are also found very well at room temperature. Hence this sensor can be utilized to detect low concentrations of formaldehyde vapors existing in the environment to protect human health.
Figure 2 illustrates XRD spectra of ITO thin films in accordance with an embodiment of the present disclosure. From the X-ray diffraction analysis, it is observed that the tin doped indium oxide thin films have shown polycrystalline nature with cubic structure. XRD spectra of ITO thin film consisting of reflections along (211), (222), (400), (521), and (541) which is in agreement with JCPDF card number 89-4598 which confirms the formation of ITO. Average crystallite size is determined using Scherrer's formula and it is found to be 11.33nm.
Figure 3 illustrates FESEM, Grain size and EDX images of ITO thin films in accordance with an embodiment of the present disclosure. The surface morphology of the thin films depends on the preparation technique and its deposition parameters. It is found that the ITO thin films are well adhesive to the substrate without any pinholes and the film possessing uniform grain distribution throughout the surface of the sample. The elemental analysis of thin film has been carried out using the Energy Dispersive X-Ray Analysis spectrum, which validates the presence of tin, indium and oxygen atoms only.
Figure 4 illustrates TEM and SAED images of ITO thin film in accordance with an embodiment of the present disclosure. To understand the nanostructure of the film, transmission electron microscopy has been performed. The selected area electron diffraction (SAED) pattern of ITO thin film is shown in the above Figure 4. It shows a set of diffraction rings, which indicates the polycrystalline nature of the prepared ITO thin film. The appeared characteristic planes (211), (222), (400), (521), (541) correspond to the simple cubic structure of tin doped indium oxide, which is in agreement with X-ray diffraction studies.
Figure 5 illustrates selectivity of formaldehyde sensor in accordance with an embodiment of the present disclosure. The room temperature sensitivity of the indium tin oxide film, which is deposited at a substrate temperature of 350 0 C towards 10 ppm of formaldehyde, is determined using following equation. Sensitivity= Ra -, where Ra is resistance of the sensor element in presence of air and Rg is resistance of the sensor element in presence of target gas. In comparison with the formaldehyde, several other gases such as methanol, ethanol, acetone, and toluene are tested at a concentration of 10 ppm. The selectivity characteristics of Indium tin oxide thin film sensors towards other gases are depicted in below Figure 5. Thus, it is concluded that the sensor element has shown good selectivity and sensitivity towards formaldehyde at room temperature.
Figure 6 illustrates repeatability of ITO thin film in accordance with an embodiment of the present disclosure. The long-term stability and repeatability of a sensor element will play an essential role in the real-time gas sensors applications. The long term stability of the indium tin oxide sensor has been reported over a period of 30 days, as depicted in below Figure 6. The sensor element has shown almost a stable response value during the period, which indicates that the sensor has good stability.
Figure 7 illustrates response verses time graph of thin film in accordance with an embodiment of the present disclosure. To investigate the repeatability, the gas sensing test has been carried out continuously for five cycles towards 10ppm concentration of formaldehyde at room temperature has shown in below Figure 6. the response values have shown a negligible variation during the repeated cycles. Hence it can be concluded that the fabricated sensor has excellent repeatability property.
Figure 8 illustrates resistance verses time graph of the thin film in accordance with an embodiment of the present disclosure. The response-recovery studies are essential parameters in real-time application to detect harmful gases. The transient response towards ppm of formaldehyde is studied at room temperature is depicted in below Figure 8. As noticed from the results, the indium tin oxide sensor deposited at 3500 C shows a classical n-type sensing behavior with large resistance in the presence of air and the resistance of the sensor dropdown when exposed to a reducing test gas (formaldehyde). From the figure, it is clear that recovery and response times are 26 s and 27 s, respectively and Transient response curve of ITO thin film towards 10 ppm of formaldehyde is seen at room temperature.
The drawings and the forgoing description give examples of embodiments. Those skilled in the art will appreciate that one or more of the described elements may well be combined into a single functional element. Alternatively, certain elements may be split into multiple functional elements. Elements from one embodiment may be added to another embodiment. For example, orders of processes described herein may be changed and are not limited to the manner described herein. Moreover, the actions of any flow diagram need not be implemented in the order shown; nor do all of the acts necessarily need to be performed. Also, those acts that are not dependent on other acts may be performed in parallel with the other acts. The scope of embodiments is by no means limited by these specific examples. Numerous variations, whether explicitly given in the specification or not, such as differences in structure, dimension, and use of material, are possible. The scope of embodiments is at least as broad as given by the following claims.
Benefits, other advantages, and solutions to problems have been described above with regard to specific embodiments. However, the benefits, advantages, solutions to problems, and any component(s) that may cause any benefit, advantage, or solution to occur or become more pronounced are not to be construed as a critical, required, or essential feature or component of any or all the claims.
Claims (6)
1. A process for manufacturing metal oxide-based formaldehyde gas sensor, the process comprises:
synthesizing Tin doped Indium oxide (ITO) thin films sensor using a chemical spray pyrolysis technique with optimized deposition parameters; and investigating formaldehyde gas sensing measurements at room temperature.
2. The process as claimed in claim 1, wherein said chemical spray pyrolysis is used to deposit large area stoichiometric thin films with uniform thickness.
3. The process as claimed in claim 1 and 2, wherein said chemical spray technique alters a variety of optical and electrical properties of ITO thin films by changing said deposition parameters.
4. The process as claimed in claim 3, wherein said deposition parameters are substrate temperature, deposition time, flow rate, substrate-nozzle distance, said concentration of solution which will play a vital role in gas sensing properties.
5. The process as claimed in claim 1, wherein said chemical spray technique promotes easy and fast doping of elements into a parent system.
6. The process as claimed in claim 1, wherein said Tin doped Indium oxide (ITO) thin films sensor responds for as low as 10ppm concentration of formaldehyde.
synthesizing Tin doped Indium oxide (ITO) thin films sensor using a chemical spray pyrolysis technique 102 with optimized deposition parameters
104 investigating formaldehyde gas sensing measurements at room temperature
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2021101790A AU2021101790A4 (en) | 2021-04-08 | 2021-04-08 | A process for manufacturing metal oxide-based formaldehyde gas sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| AU2021101790A AU2021101790A4 (en) | 2021-04-08 | 2021-04-08 | A process for manufacturing metal oxide-based formaldehyde gas sensor |
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| AU2021101790A4 true AU2021101790A4 (en) | 2021-05-27 |
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| AU2021101790A Ceased AU2021101790A4 (en) | 2021-04-08 | 2021-04-08 | A process for manufacturing metal oxide-based formaldehyde gas sensor |
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