AUSTRALIA Patents Act 1990 Complete Specification Innovation Patent Electronic Image Capturing Sub-assembly The following statement is a full description of this Invention, including the best method of performing it known to us: 1 References Foreign Patent documents RU 2006103270 6/2006 Abramov et al. Other publications (1) Park S.H. and Chuang S.L, "Crystal orientation effects on piezoelectric field and electronic properties of strained wurtzite semiconductors", Phys. Rev. B, vol. 59, pp. 4725-4737, (1999). (2) Waltereit P, Brandt 0, Trampert A, Grahn A.T, Menniger J, Ramsteiner M, Reiche M, and Ploog K.H, "Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes", Nature 406, 865 (2000). Brief description of the drawings/attachments Fig 1 is a prior art simple pocket still digital camera, with inbuilt xenon flash unit. Fig 2 is a prior art semi-professional digital SLR type camera with pop-up xenon flash, capable of taking still and video images. Fig 3 is a prior art digital video security camera, with inbuilt white LED and infrared LED illumination. Fig 4 is a prior art digital handheld night vision camera, with inbuilt white LED and infrared LED illumination. Fig 5 is a prior art Smartphone, showing front (LCD side) and rear camera/LED side. Fig 6 is a prior art door entry Video Intercom station. Fig 7 is an Electronic Image Capturing Sub-assembly CCD functional block diagram. Fig 8 shows an example representation of the Gallium Nitride crystal structure with a C-axis growth direction 16, C-plane 17, A-plane 19, M-plane 20 and R-plane 18. 2 Fig 9 shows a diagrammatical (not to scale) representation of a prior art HB LED die. Fig 10 is an example of a parabolic reflector with a point source of sample light rays emitting forwards, but only showing those light rays bouncing off the reflector. Fig 11 is an example of a parabolic reflector with a point source of sample light rays emitting forwards, showing those light rays bouncing off the reflector as well as those rays that emerge from the reflector without bouncing off the reflector's surface. Fig 12 is an example of a parabolic reflector with a medium width source of sample light rays emitting forwards, but only showing those light rays bouncing off the reflector. Fig 13 is an example of a parabolic reflector with a medium width source of sample light rays emitting forwards, showing those light rays bouncing off the reflector as well as those rays that emerge from the reflector without bouncing off the reflector's surface. Fig 14 is an example of a parabolic reflector with a wide width source of sample light rays emitting forwards, but only showing those light rays bouncing off the reflector. Fig 15 is an example of a parabolic reflector with a wide width source of sample light rays emitting forwards, showing those light rays bouncing off the reflector as well as those rays that emerge from the reflector without bouncing off the reflector's surface. Background During the past 20 years or so, there have been improvements in Electronic Image Capturing Devices such as; Digital Still and Video Cameras, Mobile Phones (also termed as "Cell Phones"), Smart Phones, Security Cameras, door entry Intercom stations, Cameras incorporated into Devices such as Laptop/Notebook computers, Tablet Computers, Car Rear Vision Cameras, Government Speed and Red light cameras, Flat Panel Computer displays with built-in cameras, etc.; which utilise 3 Imaging sensors such as: Charge Coupled Devices (CCDs), Complementary Metal Oxide Semiconductor (CMOS) sensors, Direct Image (DI) sensors, etc., as the primary Image Capturing mechanism. These improvements have been brought about by advances in electronic imaging integrated circuit (IC) chips, and the mass production of Imaging Sensors which has made the availability of modern Electronic Image Capturing Devices very common in today's society. The Human eye receives light (often reflected light) from "viewed" objects and scenes, where the light falls on the rods and cones of the eyes' retina, which in turn is processed as an image by the Human brain. Similarly, Electronic Imaging Sensors require illumination from an object(s) or scene(s) to fall on an Electronic Imaging Sensor's active and/or passive surface(s) that can then provide an electronic image that can be viewed, manipulated and/or stored in a memory device such as RAM (volatile), and may then be transferred and semi-permanently stored in a typically removable memory device such as an SD memory card. For enhanced illumination, early film-type still cameras used flash bulbs, which were later followed by the Electronic Flash invented by Dr Harold Edgerton in the early 1930's. Early film-type movie cameras used a high powered light source, when required, such as a quartz halogen light, or in certain high end situations a synchronized xenon electronic flash was required ("strobe synchronized"). An xenon electronic flash consists in basic form as the following major components: a switch, battery power, charge storing capacitor, trigger transformer, discharge transformer, xenon flash discharge tube, and reflector. Whilst highly effective for film type cameras and digital cameras to a lesser degree, the xenon electronic flash is bulky and "power hungry" for modern day consumer Electronic Image Capturing Devices such as Mobile Phones, Laptop PCs, Notebook and Tablets PCs. Additionally, the xenon electronic flash cannot operate in continuous or near continuous mode, thereby blocking its use as a video light or torch. 4 As well as being bulky, the electronic flash suffers from another major limitation: the lifetime of its components is approximately only 8,000 cycles at full power in general. This is due to the cyclic lifetime of the main storage capacitor which is specially made for the high power demands of electronic flash use and to match the lifetime of the xenon flash tube, which is the main limiting factor in an electronic flash's lifetime. A longer lasting xenon flash discharge tube can be manufactured, but the larger physical sizes as well as very significant costs dissuade manufacturers from producing these as consumer items. Recent modern prior art Imaging Devices are sometimes equipped with inbuilt high brightness (HB) LED's to provide video and still image illumination, as well as a Torch function. Whilst this is an alternative solution to the use of xenon electronic flash, the illumination typically available from the inbuilt LED flash does not come up to the performance of a typical xenon electronic flash. By way of definition, an Electronic Image Capturing sub-assembly is comprised at least of two components, being an Electronic Imaging sensor component and an Illumination component. It can be seen therefore, that the illumination component(s) of an Electronic Image Capturing Sub-assembly for modern digital Image Capturing Devices, with a longer lifetime to match the higher number of electronic flash images taken with modern digital Electronic Image Capturing Devices, a continuous Video mode, as well as a Torch mode, smaller physical size and highly efficient power usage would be very desirable. Examples of common prior art Digital Still and Video Cameras, Mobile Phones, Smart Phones, Security Cameras, Cameras incorporated into Devices such as Laptop/Notebook computers, Tablet Computers, Car Rear Vision Cameras, Government Speed and Red light cameras, Flat Panel Computer displays with built in cameras, are: Fig 1 is a prior art simple digital pocket still camera, with lense 2 and inbuilt in xenon flash unit 1. Fig 2 is a prior art semi-professional digital SLR type camera with lense 4 (covered), and pop-up xenon flash 3 capable of taking still and video images. Fig 3 is a prior art digital video security camera, with lense 5, built in 5 white LED and infrared LEDs 6. Fig 4 is a prior art digital handheld night vision camera, with lense 8, and inbuilt white LED and infrared LEDs 7. Fig 5 is a prior art Smartphone, showing front (LCD side) 9, and rear camera/LED side 12, CMOS based still/video camera 11, and LED flash 10 with still/video/torch modes. Fig 6 is a prior art door entry type Intercom station with CCD based video camera 13, LEDs 14, and audio microphone/speaker 15. This is the current stage of the prior art in the efficacy (light) of HB LED's used in Electronic Image Capturing Devices. Research in the field of LED design and manufacture over the past 15 years has also been towards producing High Efficiency (HE) "Non-Polar" and HE "Semi-Polar" LED's, which can have a reduced or nil polarization effect in their HB LED emitter's die(ce), which can lead to increased lumen density, better heat resistance, and easier optical design (due to smaller emitter die size). Various Research papers and Laboratory results; eg: Park and Chuang (1), Waltereit et al. (2); have described versions and/or theoretical results of these Non-Polar and Semi-Polar HB LED die, and an Imaging Device with an Electronic Image Capturing Sub-assembly utilising at least one of either or both of these types of high efficiency LED die(ce) in their Non Laser versions would be a significant Innovation in the field of Electronic Image Capturing Sub-assemblies. We define and collectively refer to from now on, these types of "HE Non-Laser Non Polar and HE Non-Laser Semi-Polar, HB LED" die(ce) used in the Invention as being "Low-Polar HEHB LED die(ce)". By way of definition, the Electronic Image Capturing Sub-assembly of the Invention is physically contained and permanently attached within and/or to the Electronic Device that it is part of. That is to say, for example, that in the case of a digital camera, the Low-polar HEHB LED electronic Flash of the said Sub-assembly may be built into the body of the camera or it may "pop up", but it does not separate physically from the camera. A Low-Polar HEHB LED electronic Flash that is physically removably attached to the camera by being placed in the camera's hot shoe, or by cable 6 connection, or is operated by remote signal (eg: Infra red signals, or Strobe sync signals) is not considered to be part of an Electronic Image Capturing Sub-assembly of the Invention. The disclosed Electronic Image Capturing Sub-assembly of the Invention is a significant improvement on prior art Electronic Image Capturing Sub-assemblies. Low-Polar HEHB LEDs will be the preferred light source (Illumination component) for Electronic Image Capturing Sub-assemblies, and do not suffer many of the internal in-efficiencies of prior art "polar" HB LEDs. The Electronic Image Capturing Sub assembly of the Invention uses a Low-Polar HEHB LED(s) which contain at least one Low-Polar HEHB LED die(ce). The Invention teaches those skilled in the art how to produce a more efficient Electronic Image Capturing Sub-assembly. Benefits of the Invention As LED technology is rapidly gaining momentum as the "Green" and preferable lighting source for today and the future, this technology is the most preferred for its Green Credentials. A more efficient battery powered Electronic Image Capturing Sub-assembly requires less and smaller disposable or rechargeable batteries. A Low-Polar HEHB LED can produce over 400% more light for the same LED die size as a prior art conventional HB LED, and so there are benefits that are recognised. The use of State of the Art Low-Polar HEHB LEDs Technology has a multi-pronged advantage over the use of prior art light source technologies. Firstly, Electronic Image Capturing Sub-assemblies with large reflectors can be considerably reduced in size as the smaller Low-Polar HEHB LED die size allows for much reduced optics size to obtain a similar optical efficiency. A parabolic shaped reflector is often used in Electronic Image Capturing Sub-assemblies. A simple general Cartesian equation of a parabola can be expressed as y=a*x 2 , with the 7 height being expressed as y, and the width as x. Because of the squared relationship between y and x, reducing the LED die horizontal cross-section by 0.5 (by use of a Low-Polar HEHB LED) gives a 0.52=0.25 of the original height- ie: reflector height is only 25% of original, and diameter is 50% of the original. Thus, an Electronic Image Capturing Sub-assembly's reflector diameter can be halved and its height reduced by %, for the same output of light as a prior art Electronic Image Capturing Sub-assembly. Secondly, when a Low-Polar HEHB LED has a higher lumen output density over prior art LEDs of similar size, then designs associated with that Low-Polar HEHB LED may lead to reduced thermal design challenges. Low-Polar HEHB LED die(ce) of the same brightness as prior art HB LED die(ce) often require a smaller heat sink design which reduces thermal design criteria when used in the Electronic Image Capturing Sub-assembly. Often there are also the benefits of lower heat management requirements. Thirdly, the Invention allows for a much higher brightness than ever before for the same size LED light source, whereby this gain is achieved without normally increasing the physical size of the LED, the Electronic Image Capturing Sub assembly, and/or the optical components, but rather by increasing the light density output of the light source, in this case using the Electronic Image Capturing Sub assembly of the Invention. Fourthly, the reduced size of a Low-Polar HEHB LED Chip when compared to a similar brightness prior art conventional HB LED Chip allows for a relatively more compact LED footprint size if needed. The more efficient Low-Polar HEHB LED die(ce) can replace multiple prior art single die HB LED die(ce). In the field of Electronic Image Capturing Sub-assemblies as of April 2013, no Electronic Image Capturing Sub-assemblies utilizing one or more Low-Polar HEHB LED's with reduced polarization die(ce) in an LED emitter(s) is known to the Inventors. 8 The flexibility of optical design from the increased light density of Low-Polar HEHB LEDs can decrease the power requirements of an Electronic Image Capturing Sub assembly, and assists the manufacturer in reducing physical size, heat sinking requirements and high current electronic pcb circuit design. As an example, Australian Police Forces require their field Operational Police personnel to be equipped with a considerable amount of equipment resulting in a significant weight for a Police Officer to carry on their belt/vests. There are currently moves afoot amongst most Police Forces of Australia to equip their Patrol Officers with head mounted video cameras to record live the events during their patrols. By utilising an Electronic Image Capturing Sub-assembly of the Invention, within their Video Camera, a Police Officer can reduce the physical size and weight of their Video Camera(s) considerably, and still keep the same brightness and run-time configuration as previously with a Video Camera with a prior art Electronic Image Capturing Sub-assembly. Detailed description and preferred embodiments The disclosed Invention uses a Low-Polar HEHB LED die(ce) as a source of Illumination. Elaboration of the Invention's Low-Polar HEHB LEDs and their use is necessary to appreciate the fundamentals of the Invention and their relation to the prior art. Low-Polar HEHB LEDs have been shown to have brightness increases of over 400% over current technology conventional HB LEDs of similar size. That is, a similar light output is emitted from a Low-Polar HEHB LED die that is over four times smaller than the conventional HB LED die. A HB LED die(ce) emitting area reduced in the order of 75+%, results in a die(ce) width reduction of about 50+%. Such a reduction in a HB LED's die(ce) size makes for very significant reductions in optics size, as well as increased efficiencies in light beam output and control. 9 Referring to figs 10-15, we show the sample parabola's optical paths in 2-D view with a reduced number of light rays, whereby light is only projected forward from the source (simulating a real life use of a HB LED), being a point 31 in fig 10 and fig 11, a semi-wide light source 35 in fig 12 and fig 13, and a wide light source 38 in fig 14 and fig 15. The edge of the reflector 32 is the delineating point on the reflector's diameter/length that determines the limit of where light rays either bounce off the reflector or emerge directly without hitting the reflector's surface. To show the affects of HB LED widths, we show in fig 10, fig 12, and fig 14 only the light rays emitting from the HB LED surface that bounce off the reflector and then emerge 33, 36, and 39, and in fig 11, fig 13 and fig 15 we show all rays, that is, rays coming from the HB LED surface and bouncing off the reflector 33, 36, and 39 as well as light rays that emerge directly from the HB LED surface and emerge without hitting the reflector's surface 34, 37, 40. As can be seen from fig 10 and fig 11 the theoretical point source of light 31 at the parabola's focus is the best "behaved" when used in a parabolic reflector, that is, the light emerging from the parabola's focus 31 and hitting the reflector will always project straight forward as mathematically defined. As the light source becomes wider 35 and even wider 38 the light beam outputs become more and more complex and unfocussed, leading to extremely difficult optical design problems and/or significant loss of efficiency in light beam output. A similar and often more complex problem exists when lense optics are used, and in general the larger the reflector(s) and/or the lense(s) optics relative to the dimensions of the light emitting area, the tighter the beam output and the more efficient is the output. The use of Low-Polar HEHB LEDs as the light source in the Invention's Electronic Image Capturing Sub-assembly allows for the optical problems to be significantly reduced or virtually eliminated by the inherent nature of the smaller Low-Polar HEHB LED die'(s) physical widths relative to prior art HB LEDs, resulting in increased light efficacy (lumens), higher quality light beam spread, and reduced optics sizes. 10 As of February 2013, commercially available Non Laser LEDs are of a "Polarized effect" design. The Polarized effect LED can be summarised best by referring to fig 8, and noting the atomic structure of the Gallium Nitride (GaN) crystal lattice which is the main constituent of the light generating layer in most common LEDs. The LED chip die(s) are produced on wafers in a semiconductor production facility. Referring to fig 8, there are various Planes indicated. The "C" plane 17 is the normal and easiest plane orientation for a LED manufacturer to make and slice off the individual LED wafer/dies from, as it is the normal direction 16 of crystal growth. However, C axis plane sliced wafers exhibit a high polarization effect on the resulting LED die(s). This high polarization effect has to date, reduced the efficiency and increased the thermal problems of current LEDs. Worldwide research over the past 15 years or so, (eg: Park and Chuang (1), Waltereit et al. (2)) has proven that LED wafers/die(s) sliced in a Semi-Polar direction (eg: R-plane 18), or Non-Polar direction ("M" 20 or "A" 19 planes)(at 90 deg to the C-plane) see fig 8, dramatically reduce or nearly eliminate the polarizing effect and can result in efficiency increases in LEDs of 400 to 1000%. The field of semi-conductor fabrication and crystal growth in LED substrates is very complex in the science of physics and chemistry and is on-going in development, and so a brief description follows as those knowledgeable in the art will appreciate the performance in efficiency improvements in reduced polarization Low Polar HEHB LEDs, the improvements therein, and their basis in epitaxial LED wafer production. Fundamentally, prior art HB LED die(ce) suffer from in-efficiencies in light production due to internal inefficiencies, defects and dislocations within the HB LED die's active light producing region(s). One cause of the inefficiencies is the "piezoelectric induced and intrinsic polarization" (Polar) effects in type III-nitride-based (eg: Gallium Nitride (GaN)) crystal structures which have typically been grown on a C-plane type substrate which creates "Polar" electric field effects within the resulting structure. The typical growth process of creating prior art HB LED die(ce) using a C-plane type substrate (eg: Silicon Carbide, Sapphire) structure can create strong intrinsic and induced electric fields (piezoelectric) within the die structures (including the light emitting active regions), and reduces the ability to produce light emission from the die's active region(s), i.e. by the Quantum Confined Stark Effect (QCSE) within quantum wells. 11 One way that these "Polar" effects can be greatly reduced, along with a significant reduction of many dislocations and defects, is by growing the devices on Non-Polar planes of a type Ill-nitride-based structure (eg: A Non-Polar plane of GaN type crystal structure) instead of the more commonly used Polar C-plane crystal structure. For example, in a Non-Polar plane of GaN type structure which contains equal numbers of Ga and N atoms the plane is "charge-neutral", or "without polarity". Further Non Polar layers that are laid down epitaxially are the same to one another, so the crystal(s) are not polarized along these growth directions. To the Inventors' best knowledge, as of late 2012, there are two such known groups of symmetry equivalent Non-Polar planes in type III-nitride-based (eg: GaN type) structures. They are the {1 1-20} group, the "A-planes", and the {1 -100} group, the "M-planes". Another way to reduce or even eliminate the polarization effects in type Ill-nitride based (eg: GaN type) structures is to grow the structures on Semi-Polar planes of type Ill-nitride-based (eg: GaN type) structures. The term Semi-Polar planes in the context of the Invention refers to planes within a (eg: GaN type) hexagonal type crystal structure(s) where such planes possess two nonzero "A", "7' or "' Miller indices, and a nonzero "I" Miller index. The more often referred to Semi-Polar planes include the {1 1-22} (R-Plane), {10-11}, and {10-13} planes. A Semi-Polar plane's electric field vector lies at an oblique angle to the plane's surface normal, hence reducing any full Polar effect within the plane. Non-Laser LED die structures epitaxially grown from Non-Polar or Semi-Polar type Ill-nitride-based structure base-substrate crystals, in general produce high efficiency LED die(ce) with very little or no "Polar" affected light producing active regions. These LED dice can be used to produce Low-Polar HEHB LED Chips and are referred to as Non-Laser Non-Polar or Non-Laser Semi-Polar, HEHB LED Chips as appropriate. These Non-Polar or Semi-Polar, Non-Laser HEHB LED Chips have a much higher light density output (eg: 400+ % increase) than "Polar" type HB LED Chips because of the higher efficiencies in the active regions of these LED Chip's dice. 12 We describe Low-Polar HEHB LEDs' typical physical structures by first describing a typical prior art Non-Laser HB LED. A typical prior art Non-Laser white light output HB LED chip is usually comprised of at least one die as depicted in fig 9, which in turn is manufactured from several substrate layers. The light producing Active Layer 25 is normally a layer containing Gallium Nitride (GaN) (and/or AIGaN, InGaN) with various substrate layers above 21, 22, 23, 24 and below 28, 29, 30 this layer 25. Electrical connection to the die is normally via an Anode fine gold wire to the p electrode 21 and a Cathode fine gold wire to the n-electrode 26. Electrical current through these connections results in electron flow producing photons (light) from the GaN type light-producing layer 25. The bonding layers of Indium Tin Oxide (ITO) 22, 27 allow the electrode layers 21, 26 respectively to be electrically bonded to the structure(s). In the GaN light-producing layer 25 of standard prior art GaN fig 9 with crystal growth starting with for example, a Sapphire (A1 2
O
3 ) substrate 30 in the C-plane 17 crystal growth direction 16, (the 3 most commonly used Polar substrates are Sapphire and Silicon carbide, and most recently Silicon), quantum wells grown along this axis 16 exhibit high piezoelectric fields due to the hexagonal lattice symmetry without a centre of inversion. This results in electrons and holes being pulled to the opposite sides in quantum wells resulting in greatly reduced efficiency eg: QCSE. Additionally, lack of purity, dislocations, defect concentrations, droop, and colour shift contribute to a reduced luminous efficacy of most prior art light HB LEDs to be limited to the range of 90-110 lumens/watt maximum. Low-Polar HEHB LED dice significantly reduce or eliminate these problems, and the "Low-Polar" terminology naming comes from the description of the arrangement of the crystal planes in the Type Ill-nitride based light emitting crystal structures and how they are fabricated/manufactured/cut/used in a Low-Polar HEHB LED die. To keep the description brief we concentrate on the aforementioned common planes, as those skilled in the art of GaN A3N epitaxial heterostructure optoelectronic research, design, and manufacture will recognize they are a good representation of the field of research and design. 13 We define, in a crystallographic sense, the definition of Low-Polar Planes to be those planes in GaN crystals to be the fully Non-Polar, and including the Semi-Polar, and whereby the Low-Polar plane(s) in a Low-Polar HEHB LED die may be cut/produced at an angle up to +0.0/- 1.5 degrees, for one or more of the three principal axes (X, Y, Z). The principal axes X, Y, Z are analogous to the principal planes as follows: C axis @ Z-axis, M-axis @ Y-axis, A-axis @ X-axis. Referring to fig 8, the most commonly referred to GaN type crystal planes are shown namely the standard polar(ized) C-plane {0001} 17, the A-plane {1 1-20} 19 and M plane {1-100} 20 non-polar planes, and the R-plane {1 1-22} 18 semi-polar plane. There are other semi-polar planes eg: {10-11}, {10-1-1}, {10-1-3}, {10-13} as well, but the C, A, M, and R are the most commonly referred to crystallographic planes in GaN type crystal structures, and by our definition above, the A, M, and R planes are Low Polar. Waltereit et al. (2) in the year 2000 were the first researchers to demonstrate an absence of a piezoelectric field in GaN/AIGaN in the non-polar M plane. Park and Chuang (1) noted in the year 1999 that certain semi-polar planes can eliminate or nearly eliminate the piezoelectric field. Research in the past few years has shown solutions to the problems of manufacturing Low-Polar GaN LED dice, and one example is: Abramov et al. (Foreign patent RU 2006103270) who teach the use of Langasite that is a natural Non-polar crystal that can be used as a substrate base for producing Non-polar GaN. By utilizing a low-polar type III-nitride based (eg: GaN) light producing layer ("active layer"), the polarization and piezoelectric effect is minimized or not present, resulting in increased lumen efficacy, greater lumen density in the range of 400%+, minimal droop at high temperatures and currents, increased heat resistance and minimal colour shift. It is noted that an Electronic Image Capturing Sub-assembly may use a coloured output non-white light emitting HB LED that uses other chemistry mixes, including alloys of Gallium. Eg: Infrared LEDs may use Gallium arsenide (GaAs) or Aluminium Gallium arsenide (AIGaAs); or where a UV emitting HB LED may use Aluminium 14 Gallium Indium Nitride (AIGaInN), a yellow HB LED may use Aluminium Gallium Indium Phosphide (AIGaInP) in its active layer(s). The most common "colours" are infrared, red, orange, yellow, green, blue, violet, and ultra violet (UV). To keep the descriptions brief we will refer to typical structure types and alloys/mixes where Gallium is used, as GaN "type" structures. There are many other type Ill-nitride chemistries, including alloys of Gallium, that may be used to produce different coloured light emissions, as well as the combined use of multiple LED die(ce) of different output colours that may be individually powered to produce a variable coloured light as desired. The descriptions and examples given should not limit the scope of the Invention in any way. There are generally two basic types of configurations of Electronic Image Capturing Sub-assemblies: those that utilise a CCD based imaging Sensor, and those that use CMOS based Imaging Sensors. Additionally, recently available, there are DI based Imaging Sensors that directly capture all three main colours (RGB) through a three layer embedded configuration, resulting in full colour RGB image capture through every point in the captured image. The first preferred embodiment of an Electronic Image Capturing Sub-assembly of the Invention has a DI based Image sensor as its image capturing component combined with a Low-Polar HEHB LED chip as the Illumination component of the Sub-assembly. The second preferred embodiment of an Electronic Image Capturing Sub-assembly of the Invention has a CCD based Image sensor as its image capturing component combined with a Low-Polar HEHB LED chip as the Illumination component of the Sub-assembly. The third preferred embodiment of an Electronic Image Capturing Sub-assembly of the Invention has a CMOS based Image sensor as its image capturing component combined with a Low-Polar HEHB LED chip as the Illumination component of the Sub-assembly. 15 The fourth preferred embodiment of an Electronic Image Capturing Sub-assembly of the Invention has a DI based Image sensor as its image capturing component combined with at least two LED chip(s), whereby at least one of the LED chips is a Low-Polar HEHB LED chip of the Illumination component of the sub-assembly. The fifth preferred embodiment of an Electronic Image Capturing Sub-assembly of the Invention has a CCD based Image sensor as its image capturing component combined with at least two LED chip(s), whereby at least one of the said LED chips is a Low-Polar HEHB LED chip of the Illumination component of the Sub-assembly. The sixth preferred embodiment of an Electronic Image Capturing Sub-assembly of the Invention has a CMOS based Image sensor as its image capturing component combined with at least two LED chip(s), whereby at least one of the LED chips is a Low-Polar HEHB LED chip of the Illumination component of the Sub-assembly. A Functional block diagram of one preferred layout of the Electronic Image Capturing Sub-assembly with a CCD based Image sensor is shown in fig 7. Overall control of the Electronic Image Capturing Sub-assembly is from the CPU of the Electronic Image Capturing Device, through the System I/O Bus. The CCD based Image Capturing sensor receives the light from a scene through the lense(s) via the image conditioner (manual and/or automatic: shutter speed, aperture, focus, etc.). The CPU then analyses the scene image and then, when in one of many automatic modes advises: the Image conditioner to modify the Image Conditioner parameters (eg: focus, aperture, shutter speed, etc.), and advise the Flash/(Torch)/Video LED Controller to initiate LED (Low-Polar HEHB LED) output power and duration for an optimised imaging. The image(s) are then processed and stored in temporary Memory and then saved to semi-permanent Memory such as a removable SD card. The disclosed description of the Invention reveals the advantages and methods of how to produce a reliable, Electronic Image Capturing Sub-assembly utilizing Low Polar HEHB LED(s). The embodiments illustrated and discussed in this specification are intended only to teach those skilled in the art the best way known to the Inventors to make use of the 16 Invention. Nothing in this specification should be considered as limiting the scope of the present Invention. All examples presented are representative and non-limiting. The above-described embodiments of the Invention may be modified or varied, without departing from the Invention, as appreciated by those skilled in the art in light of the above teachings. It is therefore to be understood that, within the scope of the claims and their equivalents, the Invention may be practiced otherwise than as specifically described. 17