AU2007202687A1 - Ultra-wide band differential input/output, high frequency active splitter in an integrated circuit - Google Patents

Description

AUSTRALIA

Patents Act 1990 COMPLETE SPECIFICATION STANDARD PATENT Applicant(s): ITT Manufacturing Enterprises, Inc.

Invention Title: ULTRA-WIDE BAND DIFFERENTIAL INPUT/OUTPUT, HIGH FREQUENCY ACTIVE SPLITTER IN AN INTEGRATED CIRCUIT The following statement is a full description of this invention, including the best method of performing it known to me/us:

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00 oO (NO ULTRA WIDE BAND, DIFFERENTIAL INPUT/OUTPUT, O HIGH FREQUENCY ACTIVE SPLITTER IN AN INTEGRATED CIRCUIT CROSS REFERENCE TO RELATED APPLICATIONS This application claims priority of U.S. Provisional Patent Application Serial No. 60/817,389, filed June 29, 2006.

FIELD OF THE INVENTION The present invention relates, in general, to a high frequency splitter.

More specifically, the present invention relates to an ultra wide band (from DC to greater than 20 GHz) active splitter that is fabricated as an integrated circuit, and has differential input/output signal capabilities.

BACKGROUND OF THE INVENTION A splitter receives one input signal and generates a two output signals.

The frequency components of the output signals are substantially similar to the frequency components of the input signal. A splitter typically has a loss of gain (in other words an attenuation) of at least 3dB.

-2r When splitting very low level signals, there is a need to amplify the output signals before further processing is performed. An amplifier stage is typically required. In wide band applications, the splitter stage and the amplifier stage must 00 Sbe designed to respond to the entire frequency band of operation. These are difficult s design requirements.

It is difficult to fabricate a wide band splitter on a die for use as an integrated circuit It is even more difficult to fabricate an ultra wide band active splitter on a die having gain across a frequency band that spans from direct current (DC) up to a frequency in excess of 20 GHz. The present invention addresses such a splitter.

SUMMARY OF THE INVENTION To meet this and other needs, and in view of its purposes, the present invention provides a wideband splitter including a core amplifier for receiving a single pair of differential input signals and providing first and second pairs of differential output signals. The first pair of differential output signals has substantially identical characteristics to the second pair of differential output signals, including a signal gain between the differential input signal and the first and second pairs of differential output signals.

The splitter may also include a bandwidth peaking network having a first coil and a first resistor connected in series, and a second coil and a second resistor connected in series, and the first coil and resistor and the second coil and resistor, respectively, are coupled to the core amplifier for receiving the K, 4 amplified differential output signals. The bandwidth peaking network is configured to increase the frequency bandwidth of the splitter.

00 IDThe bandwidth peaking network may include a first node formed Sbetween the first coil and first resistor, a second node formed between the s second coil and second resistor, and a third resistor connected between the first node and the second node. The third resistor is free of any current flow at low frequency operation of the splitter.

The splitter further includes a common mode bias network coupled between the output terminals for providing a voltage bias control feedback signal jo across the input terminals. The voltage bias control feedback signal is derived from a virtual ground common mode potential across the output terminals.

Another aspect of the current invention includes a core amplifier configured to provide a substantially constant signal gain between the received single pair of differential input signals and the first and second pairs of differential output signals.

It is understood that the foregoing general description and the following detailed description are exemplary, but not restrictive, of the invenl:ion.

BRIEF DESCRIPTION OF THE DRAWING The invention is best understood from the following detailed description when read in connection with the accompanying drawing. Included in the drawing are the following figures: -4- FIG. 1 is a functional diagram of the input and output signals of an ;Zultra wide band active splitter, in accordance with an embodiment of the present invention; 0 FIG. 2 is a functional block diagram of the ultra wide band active 00 splitter shown in FIG. 1, in accordance with an embodiment of the present invention; SFIG. 3 is a schematic diagram of a bandwidth peaking network and a core amplifier shown in FIG. 2, in accordance with an embodiment of the present invention; FIGS. 4A and 4B are schematic diagrams of respective buffers shown in FIG. 2, in accordance with an embodiment of the present invention; FIGS. 5A and 5B are schematic diagrams of output bias networks shown in FIG. 2, in accordance with an embodiment of the present invention; FIG. 6 is a schematic diagram of a core amplifier bias network shown in FIG. 2, in accordance with an embodiment of the present invention; is FIG. 7 is a schematic diagram of a common mode bias network and an impedance and voltage bias control network shown in FIG. 2, in accordance with an embodiment of the present invention; FIGS. 8 and 9 are layouts showing the partitioning of transistors and resistors, which are located in a common centroid arrangement on a die, in accordance with an embodiment of the present invention; FIG. 10 is a layout diagram showing approximate sizes of various Selements of the ultra wide band active splitter of FIG. 2, in accordance with an embodiment of the present invention; 00 FIG. 11A is a plot of impedance level versus frequency (in arbitrary

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(N 5 units); SFIG. 11B is a plot of gain (dBv) versus frequency (in arbitrary units); and FIG. 12 is a detailed schematic diagram of the ultra wide band active splitter shown in FIGS. 1 and 2, in accordance with an embodiment of the present invention; DETAILED DESCRIPTION OF THE INVENTION As will be described, the present invention provides an ultra wide band active splitter, providing gain while operating between direct current (DC) and frequencies greater than 20 GHz. The present invention includes a bandwidth Is peaking network that extends the frequency response of the splitter and provides a substantially constant gain across that frequency response. In addition, the present invention receives one pair of differential input signals and transmits two pairs of differential output signals. The present invention also has a controlled input impedance and controlled output impedances. Moreover, the present invention operates with a low supply voltage and includes a common mode biasing method for alternating current (AC) applications, and an accurate fixed ratio bias tracking -6scheme. These features all contribute to advantageous improvements of an ultra Swide band active splitter that provides amplification and is disposed on a die fabricated for use in an integrated circuit (IC) or chip.

SReferring to FIG. 1, there is shown a functional input/output block 00 Sdiagram of an ultra wide band active splitter, generally designated as 10. In Saccordance with an embodiment of the present invention, ultra wide band active splitter 10 includes differential input signals, shown as Vin positive and Vin negative.

The ultra wide band active splitter 10 also includes two pairs of differential output signals, respectively shown as Vout A positive and Vout A negative, and Vout B positive and Vout B negative. The ultra wide band active splitter 10 also includes biasing controls, shown as current (I)-bias output control A, I-bias output control B, I-bias control, and I-gain adjust. These different biasing and gain adjust controls will be described later. Lastly, as shown in FIG. 1, ultra wide band active splitter includes VCCA and VCCB primary power inputs of nominally 3.0 volts and GNDA and is GNDB ground potentials.

A functional block diagram of the ultra wide band active splitter is shown in FIG. 2. As shown, ultra wide band active splitter 10 includes core amplifier 18, which receives the positive input (Vin pos) and the negative input (Vin neg), being a pair of differential input signals. A pair of differential output signals are provided from core amplifier 18, the core output signals core out pos and core out neg. These signals in turn are buffered by buffers 22 and 23, to provide the positive output signals (Vout A pos and Vout B pos) and the negative output signals (Vout A neg and Vout B neg) for two separate differential outputs A and B.

The biasing of the transistors of core amplifier 18 (shown in FIG. 3) is Sprovided by core amplifier bias network 24, which in turn is controlled by two input control signals of I-bias control and I-gain adjust. Biasing of the transistors of buffer 22 (shown in FIG. 4A) is provided by output bias network 25, which in turn is 00 0s controlled by an input signal of I-bias output control A. Similarly, biasing of the

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transistors of buffer 23 (shown in FIG. 4B) is provided by output bias network 26, which in turn is controlled by an input signal of I-bias output control B.

Core amplifier 18 provides a gain adjusted, constant amplification of across an ultra wide frequency band spanning from zero (DC) up to at least 1o 20 GHz. The gain value of core amplifier 18 is maintained across the entire band of the splitter by use of bandwidth (BW) peaking network 14.

Ultra wide band active splitter 10 also includes tightly controlled input and output impedances. The input impedance is controlled by way of impedance and voltage bias control network 12, which in turn receives a voltage bias control feedback signal from common mode bias network 16. The common mode bias network 16 senses the voltage across the outputs of core amplifier 18, as shown in FIG. 2. As will be described later, common mode bias network 16 includes a center tap node, which feeds back a common voltage to the impedance and voltage bias control network 12 at the input terminals of ultra wide band active splitter Consequently, the same voltage bias value is supplied to the positive input terminal and the negative input terminal.

Referring next to FIG. 3, there is shown greater detail of core amplifier 18 and bandwidth peaking network 14. In the embodiment shown in FIG. 3, -8- Stransistors Q1 and Q76 are physically two separate transistors on the die; it will be

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appreciated, however, that transistors Q1 and Q76 behave as one transistor (it is noted that the bases of the transistors are connected; the collectors of the transistors are connected; and the emitters of the transistors are connected).

00 Similarly, transistors Q2 and Q19 behave as one transistor; transistors Q65 and Q64 behave as one transistor; transistors Q67 and Q66 behave as one transistor; transistors Q74 and Q73 behave as one transistor; and transistors Q71 and Q72 Sbehave as one transistor.

A negative input signal is provided into core amplifier 18 by way of the 1o bases of transistors Q1 and Q76; and a positive input signal is provided into core amplifier 18 by way of the bases of transistors Q2 and Q19. The negative output signal, namely the core out negative signal is provided as an output signal by way of the emitters of transistors Q74 and Q73. The positive output signal, namely the core out positive signal is provided as an output signal by way of the emitters of I' transistors Q71 and Q72. In this manner, core amplifier 18 effectively provides a pair of differential output signals.

The biasing of the transistors of core amplifier 18 is provided by way of core amplifier bias network 24 (FIG. As shown in FIG. 3, the emitters of transistors Q1, Q76, Q19 and Q2 are connected to core amplifier bias network 24.

Each of these four emitters, as shown in FIG. 6, is biased by the same bias current Similarly, the emitters of transistors Q65, Q64, Q67 and Q66 are connected to core amplifier bias network 24. Each of these four emitters, as shown in FIG. 6, is biased by the same bias current (Ic68).

SThe current flowing from the collectors of transistors Q65 and Q64 is

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provided to a first set of a resistor and inductor combination, namely RO and L1 of the bandwidth peaking network 14. Similarly, the collector current provided by the combination of transistors Q67 and Q66 flows through a second set of a resistor and 00 INs inductor combination, namely R1 and L2 of bandwidth peaking network 14. Another O resistor (designated as R21), which is disposed between a node of RO and L1 and another node of R1 and L2, is also configured to receive current from transistors Q64, Q65, Q66 and Q67.

It will be appreciated that the current flowing in the collectors of and Q64, and the current flowing in the collectors of Q67 and Q66, would start rolling-off at a first predetermined frequency. On the other hand, with bandwidth peaking network 14 included in the present invention, as shown in FIG. 3, the impedance seen at the collectors of Q64, Q65, Q66 and Q67 increases with frequency compensating for the collector current roll-off.

The inventor has discovered that, preferably by experimentation, the gain provided by core amplifier 18 may be adjusted to have substantially constant gain level from its lowest frequency response up to its maximum frequency response. This phenomenon is best shown by referring to FIGS. 11A and 11B. FIG.

11A provides a plot of impedance seen by the collectors of Q64, Q65, Q66 and Q67 versus frequency in arbitrary units. The inventor has shown that bandwidth peaking network 14 increases the frequency response of ultra wide band active splitter 10 by as much as 35 percent. For example, if one unit is defined as 1. GHz, then 1.35 units is at 15 GHz and, correspondingly, the upper frequency response of ultra wide band active splitter 10 is also at 15 GHz. As another example, if one unit is defined as 16 GHz, then 1.35 units is at 21.5 GHz and, correspondingly, the upper

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frequency response of ultra wide band active splitter 10 is also at 21.5 GHz.

In operation, bandwidth peaking network 14 provides a substantially 00 00constant impedance level of Z up to 1.0 frequency units. From 1.0 frequency units

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up to 1.35 frequency units, the impedance level of Z increases, as shown in FIG.

S11A. As a result, the gain of core amplifier 18, resulting from the combination of transistors Q64, Q65, Q66 and Q67 extends at a substantially constant value until reaching the frequency of 1.35 units, as shown in FIG. 11B.

The inventor has found that preferably RO has a value and physical construction that is similar to the value and physical construction of R1.

Furthermore, resistor R21 is substantially similar in value and physical construction to either resistor RO or R1. Additionally, transistors Q64, Q65, Q66 and Q67 are preferably silicon germanium (SiGe) transistors which have a maximum transition frequency of 120 GHz. It will be appreciated that at the lower frequencies, is bandwidth peaking network 14 presents an impedance that is substantially resistive in value. This is due to L1 and L2 having an inductive low impedance at the lower frequencies. Consequently, RO and R1 are effectively directly connected to VCC, which results in R21 being free of any current flow.

It will be understood that the number and values of the components of 2o bandwidth peaking network 14 on the die of the integrated circuit are complex. This is because there are many parasitic capacitances that exist between points across each physical resistor and points on the substrate of the die. Similarly, there are many parasitic capacitances that exist between points of each coil and points on the 11 substrate. The impedance level Z varies as a function of frequency and is very complicated to calculate. As a result, the inventor prefers to find the resistive values of RO, R1 and R21 and the inductive values of L1 and L2 (which are equal to each other by symmetry) by experimentation. By experimentally adjusting the output 00 I s gain response of core amplifier 18 to be at a constant gain of lOdBv, across the

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rC entire frequency bandwidth the values of RO, R1, R21, L1 and L2 may be l^- 0 determined.

The manner in which the gain of core amplifier 18 is maintained at a constant value may be seen from the following simplified equations: Vout I(w)*Z(w) I(w) Vinegm(w) Vout Vin.gm(w)*Z(w) Vout/Vin gm(oa)Z(o) where: is gm(w) is the transconductance of the transistor as a function of frequency Z(o) is the impedance presented to the transistor, and Vout/Vin is the gain of the splitter.

The values of Z(w) presented to core amplifier 18 by the bandwidth peaking network 14 (which includes resistances, inductances, and parasitic 12- Scapacitances) are adjusted so that the gain of the ultra wide band active splitter

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is maintained at a constant value over the desired frequency range.

Still referring to FIG. 3, there is shown resistor R12 connected 00 00between the collectors of transistor combination Q1 and Q76 and the emitters of s transistor combination Q73 and Q74. Similarly, resister R13 is connected between the collectors of the combination of transistors Q2 and Q19 and the emitters of the C combination of transistors Q71 and Q72.

The differential signals core output positive and core output negative are buffered by buffer 22 (FIG. before the positive output and negative output differential signals for output A are transmitted from ultra wide band active splitter Buffer 22 is shown in more detail in FIG. 4A. As shown, buffer 22 includes two transistors, designated as Q91 and Q93. The collector of each of these transistors is connected to VCC (nominally 3.0 volts), the base of each transistor receives one of the differential output signals from core amplifier 18, and the emitter of each Is transistor is biased by output bias network 25 (FIG. The final differential output signals, namely Vout A positive and Vout A negative are provided by the emitters of Q93 and Q91, respectively. Thus, Q93 and Q91 behave as emitter followers each providing a gain value of less than one to the differential output signals of core amplifier 18 for output A.

Similarly, the differential signals core output positive and core output negative are also buffered by buffer 23 (FIG. before the positive output and negative output differential signals for output B are transmitted from ultra wide band active splitter 10. Buffer 23 is shown in more detail in FIG. 4B. As shown, buffer 23

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13 Sincludes two transistors, designated as Q83 and Q85. The collector of each of these

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Stransistors is connected to VCC (nominally 3.0 volts), the base of each transistor receives one of the differential output signals from core amplifier 18, and the emitter of each transistor is biased by output bias network 26 (FIG. The final differential 00 output signals, namely Vout B positive and Vout B negative are provided by the emitters of Q83 and Q85, respectively. Thus, Q83 and Q85 behave as emitter followers each providing a gain value of less than one to the differential output signals of core amplifier 18 for output B.

The biasing of the emitters of transistors Q91 and Q93 is shown in 1o greater detail in FIG. 5A. As shown, output bias network 25 provides a current bias to transistors Q91 and Q93 of buffer 22 (FIGS. 2 and 4A). A collector current flowing in transistor Q90 is shown designated as Ic90, which biases the emitter of transistor Q93 of buffer 22. Similarly, a collector current flowing in transistor Q89 is shown designated as Ic89, which biases the emitter of transistor Q91 of buffer 22. It will be appreciated that the bases of transistors Q89 and Q90 are connected to each other and similarly controlled by the input signal of I-bias output control A provided to transistor Q92. As shown, transistor Q92 has its collector and base connected together and coupled into output biasing transistors Q89 and Q90. Accordingly, the collector current of each of transistors Q89 and Q90 is substantially the same and the biases seen by the transistors of buffer 22 are substantially equal to each other.

More generally, output bias network 25 may include N biasing transistors in a chain, as shown. Each of the N biasing transistors have their bases connected together and coupled to input transistor Q92. The input signal of I-bias output control A, which controls each transistor in the chain, may be used to se! -14- Sequal bias values to other transistors (not shown) in an output buffer stage (for

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example, buffer 22).

Similarly, the biasing of the emitters of transistors Q83 and Q85 is 00 00shown in greater detail in FIG. 5B. As shown, output bias network 26 provides a s current bias to transistors Q83 and Q85 of buffer 23 (FIGS. 2 and 4B). A collector current flowing in transistor Q84 is shown designated as Ic84, which biases the Semitter of transistor Q83 of buffer 23. Similarly, a collector current flowing in transistor Q86 is shown designated as Ic86, which biases the emitter of transistor of buffer 23. It will be appreciated that the bases of transistors Q84 and Q86 io are connected to each other and similarly controlled by the input signal of I-bias output control B provided to transistor Q80. As shown, transistor Q80 has its collector and base connected together and coupled into output biasing transistors Q84 and Q86. Accordingly, the collector current of each of transistors Q84 and Q86 is substantially the same and the biases seen by the transistors of buffer 23 are substantially equal to each other.

More generally, output bias network 26 may include N biasing transistors in a chain, as shown. Each of the N biasing transistors have their bases connected together and coupled to input transistor Q80. The input signal of I-bias output control B, which controls each transistor in the chain, may be used to set equal bias values to other transistors (not shown) in an output buffer stage (for example, buffer 23).

Having described output bias networks 25 and 26, core amplifier bias network 24 will now be described. Referring to FIG. 6, there is shown core amplifier 15 bias network 24. As shown, the core amplifier bias network is controlled by two C, input signals. The first input signal is I-bias control, which, for example, may have a nominal value of 5OOpA in this embodiment. The second input signal is I-gain adjust, which, for example, may have a value of 10JA per dB of gain reduction with 00 IN s a nominal range of 0 to 100pA for a splitter gain of 10OdBv. The I-bias control signal O,1 is provided to the base of transistor QO by way of a compensation network, shown as and C330, which prevent oscillation of QO. Transistor Q8 and resistor R14 are bleeding elements and prevent gain slope reversal that may happen for large values of I-gain adjust.

The bases of transistors Q55 and Q68 (and up to transistor Qn) are connected to the junction of R2 and R14. As a result, each of these biasing transistors provides the same biasing current to respective transistors of core amplifier 18. As shown, biasing transistor Q55 provides biasing current Ic55 to transistors Q1, Q76, Q19 and Q2 of core amplifier 18. Similarly, biasing transistor Q68 provides biasing current Ic68 to transistors Q65, Q64, Q67 and Q66 of core amplifier 18. Transistors Q55 and Q68 provide bias current related to their physical size relationship with respect to reference transistor Q7. In general, there may be additional core amplifier biasing transistors placed in a chain (up to Qn), which may be used to bias additional transistors (not shown) of another exemplary core amplifier.

In operation, an increase in I-bias control provides additional current flowing through the collector of the biasing transistors (Q55, Q68, up to Qn) which, in turn provide an increase in collector current flowing into core amplifier 18. In this 16manner, an increase in I-bias control results in an increase in gain of core amplifier 18.

Working in an opposite manner, an increase in I-gain adjust results in l^- 0 an increased IR voltage drop across resistor R2 and a decreased IR drop across

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Os resistor R14. Consequently, as I-gain adjust increases, the current flowing into SQ68, up to Qn decreases in value. This, in turn, causes a decrease in the collector NC currents of biasing transistors Q55, Q68, up to Qn. A decrease in the collector currents of these biasing transistors reduces the gain of core amplifier 18.

Core amplifier biasing network 24 may include biasing transistors (for 1o example Q55, Q68, up to Qn) that provide corresponding collector currents (for example Ic55, Ic68, up to Icn) that are different from each other. As an example, transistor Q68 may be required to provide a collector current of Ic68 at a value of 2mA, whereas transistor Q55 may be required to provide a collector current of at a value of ImA. Such biasing ratio of 2mA/lmA may be achieved by physically is implementing transistor Q68 to be twice as large as transistor Q55. As another example, transistor Q68 may be required to provide a collector current Ic68 at a value of 4mA, whereas transistor Q55 may be required to provide a collector current at a value of ImA. Such biasing ratio of 4mA/lmA may be achieved by implementing transistor Q68 physically four times larger than transistor Q55. In this manner, the present invention can maintain the desired biasing currents to core amplifier 18 at a fixed ratio based upon the physical size relationship among the biasing transistors.

17- SReferring next to FIG. 7, the common mode bias network, designated

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as 16, and the impedance and voltage bias control network, designated as 12, will now be described.

00 00 The differential output from core amplifier 18 (FIG. namely the s voltage difference between the core amplifier out positive signals and the core amplifier out negative signals, is sensed by common mode bias network 16 by way Cr of resistor R36A and resistor R36B. Since the signal voltage across R36A and R36B is equal in magnitude but opposite in sign, node 17A is effectively a virtual ground (Vg) and includes the common mode voltage generated between the positive signal 1o output (core out positive) and the negative signal output (core out negative). This common mode voltage at node 17A is sensed by (or fed back to) node 17B as the voltage bias control feedback signal. Node 17C and node 17D, in turn, sense substantially the same common mode voltage that is present at node 17B.

In operation, common mode bias network 16 senses the differential output voltage of core amplifier 18 and establishes a common center point as the common mode voltage. The common mode voltage is fed back to impedance and voltage bias control network 12. The common mode voltage is split by way of resistors R42 and R43 to establish a common voltage bias at both input terminals (nodes 17C and 17D) to core amplifier 18 (transistors Q1 and Q76, and transistors Q19 and Q2, shown in FIG. 3).

The input impedance is controlled by network 12 by way of resistor R8, which is connected between resistors R42 and R43. Since the impedance level looking back from core amplifier 18 has a high value, resistor R8 effectively 18- Sestablishes the impedance value at the input terminals of Vin positive and Vin

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negative. In the exemplary embodiment, the impedance level is 100 ohms between nodes 17C and 17D, and the impedance level is 50 ohms between each terminal and ground potential.

00

NO

s It will be understood that ultra wide band active splitter 10 is entirely fabricated on a substrate of a die for use as an integrated circuit. The layout of the various components shown in FIG. 2 is complex and configured using CAD tools. A functional high level block diagram of the die, generally designated as 100, is shown in FIG. 10. It will be understood that FIG. 10 is not drawn to scale and much of the layout detail is not shown. The die 100 of the integrated circuit includes an area of approximately 1000 microns by 1000 microns. The input and output pads (designated as 111, 119 and 127, 121 and 103, 117) as well as the voltage and ground pads (not shown) are each approximately 100 microns by 100 microns.

The Y-shaped lines shown in FIG. 10 are the input transmission lines is (designated as 113 and 115), which are disposed between the voltage input pads (designated as 111 and 119) and the core amplifier (designated as 109). Similarly, the Y-shaped output transmission lines for output A (designated as 125 and 123) are disposed between the output buffer (shown as part of core amplifier 109) and the output A pads (designated as 127 and 121). Also similarly, the Y-shaped output transmission lines for output B (designated as 105 and 107) are disposed between the output buffer (shown as part of core amplifier 109) and the output B pads (designated as 103 and 117). Also shown in FIG. 10 is the bandwidth peaking network (designated as 101), which is physically larger than core amplifier 109. The core amplifier 109 has a size of approximately 100 microns by 30 microns.

-19- SEach of the transmission lines has a controlled impedance of 50 ohms.

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The width of each transmission line is approximately 25 microns.

It will be appreciated that the transistors and the resistors are 00 configured on the die to have a common centroid arrangement. For example, the s transistors shown schematically in FIG. 3, namely the three groupings of transistors Q1, Q76, Q19 and Q2; transistors Q64, Q65, Q66 and Q67; and transistors Q74, SQ73, Q71 and Q72 are arranged as shown in FIG. 8. The arrangement of these transistors is shown designated generally as 80. Similarly, the resistors of common mode bias network 16, shown schematically in FIG. 7, are also configured on the die in a common centroid arrangement. As shown in FIG. 9, one half of resistor R36B disposed in the first quadrant of arrangement 90 and the other half of resistor R36B disposed in the third quadrant of arrangement 90. Similarly, resistor R36A is divided in half as shown, where one half is disposed in the second quadrant and the other half is disposed in the fourth quadrant.

Is FIG. 12 depicts the ultra wide band active splitter in greater detail. As shown, ultra wide band active splitter 1200 includes impedance and voltage bias control network 1202 and common mode bias network 1206 (previously described by reference to FIG. Also shown in FIG. 12 is bandwidth peaking network 1204 and core amplifier 1210 (previously described by reference to FG. Output A Buffer 1212 and output A bias network 1214 (previously described, respectively, by reference to FIGS. 4A and 5A) are shown on the right hand side of FIG. 12. Output B Buffer 1213 and output B bias network 1215 (previously described, respectively, by reference to FIGS. 4B and 5B) are also shown on the right hand side of FIG. 12.

20 r Lastly, core amplifier bias network 1208 is shown at the bottom portion of FIG. 12 (previously described by reference to FIG. 6).

00 IDAlso shown in FIG. 12 are connections from each transistor to the Ssubstrate of the die, connections from each resistor to the substrate, connections S from each coil to the substrate, and connections from each capacitor to the substrate. These connections have been omitted in the other figures of ultra wide band active splitter 10. The ultra wide band active splitter shown in FIG. 12 is implemented using selective-epitaxial SiGe bipolar transistors. The transistors shown in FIG. 12 may also be implemented using other materials including, but not 1o limited to silicon, GaAs, InP and AIGaAs.

Although the invention is illustrated and described herein with reference to specific embodiments, the invention is not intended to be limited to the details shown. Rather, various modifications may be made in the details wittin the scope and range of equivalents of the claims and without departing from the is invention.

In the claims which follow and in the preceding description of the invention, except where the context requires otherwise due to express language or necessary implication, the word "comprise" or variations such as "comprises" or "comprising" is used in an inclusive sense, i.e. to specify the presence of the stated features but not to preclude the presence or addition of further features in various embodiments of the invention.

Claims (4)

1. 3. The wideband splitter of claim 2, wherein 2 the signal gain is substantially constant across a frequency bandwidth 3 response of the core amplifier.
2. 4. The wideband splitter of claim 3, wherein 2 the signal gain is adjustable. The wideband splitter of claim 3, wherein 22 S2 the frequency bandwidth response is between DC and at least 20 GHz. l 6. The wideband splitter of claim 1 further including 00 2 a bandwidth peaking network including a first coil and a first 3 resistor connected in series and a second coil and a second resistor connected in 4 series, s the first coil and resistor and the second coil and resistor, respectively, 6 coupled to the core amplifier for receiving amplified differential signals, and 7 the bandwidth peaking network configured to increase the frequency 8 bandwidth of the amplifier. 1 7. The wideband splitter of claim 6, wherein 2 the bandwidth peaking network includes a first node formed 3 between the first coil and resistor and a second node formed between the second 4 coil and resistor, s a third resistor is connected between the first node and the second 6 node, and 7 the third resistor is free-of current flow at low frequency operation of 8 the core amplifier. -23
3. 8. The wideband splitter of claim 1 further including ;Z 2 a common mode bias network coupled between output terminals 3 providing the first and second pairs of differential output signals and input terminals 00 00 4 providing the single pair of differential input signals, and IND s the common mode bias network providing a voltage bias control 6 feedback signal from the output terminals to the input terminals, 7 wherein the voltage bias control feedback signal provides a virtual 8 ground common mode potential. 1 9. The wideband splitter of claim 8, wherein 2 the common mode potential across the input terminals is substantially 3 equal to a DC potential across the output terminals. 1 10. A wideband splitter comprising 2 a core amplifier for receiving a single pair of differential input signals 3 and providing first and second pairs of differential output signals, 4 the core amplifier including a first amplifier and a second amplifier for s receiving the single pair of differential input signals, 6 a bandwidth peaking network including a first coil and a first 7 resistor connected in series and a second coil and a second resistor connected in 8 series, a first node formed between the first coil and the first resistor and a 24 F1 9 second node formed between the second coil and the second resistor, and a third resistor connected between the first node and the second node, and 11 the first amplifier coupled to an end of the first resistor and the second 00 12 amplifier coupled to an end of the second resistor, IN 13 wherein the bandwidth peaking network is configured to increase the 14 frequency bandwidth of the core amplifier, and is the core amplifier provides a signal gain between the received single 16 pair of differential input signals and the first and second pairs of differential output 17 signals. 1 11. The wideband splitter of claim 10 wherein 2 the first and second amplifiers each includes: 3 first and second sub-stages of amplification, and 4 the first and second sub-stages of amplification of the first s amplifier and the first and second sub-stages of amplification of the second 6 amplifier are configured as physically similar to each other on a die. 1 12. The wideband splitter of claim 11 wherein 2 the first sub-stage of amplification of the first amplifier and the first 3 sub-stage of amplification of the second amplifier are formed in a common centroid 4 configuration on the die, and 25 i s the second sub-stage of amplification of the first amplifier and the 6 second sub-stage of amplification of the second amplifier are formed in another 7 common centroid configuration on the die. 00 S13. The wideband splitter of claim 11 wherein 2 the first sub-stage of amplification of the first amplifier and the first 3 sub-stage of amplification of the second amplifier are biased by a common voltage 4 reference point, and the second sub-stage of amplification of the first amplifier and the 6 second sub-stage of amplification of the second amplifier are biased by the same 7 common voltage reference point. 1 14. The wideband splitter of claim 13 wherein 2 the common voltage reference point includes a voltage level provided 3 into bases of a plurality of transistors, and 4 a first collector of the plurality of transistors supplies a first collector s current for biasing the first sub-stages of amplification, and 6 a second collector of the plurality of transistors supplies a second 7 collector current for biasing the second sub-stages of amplification. The wideband splitter of claim 14 wherein 26 (K 2 the first collector current and the second collector current are 3 substantially similar to each other. 00 C16. The wideband splitter of claim 14 wherein 2 the first collector current and the second collector current are 3 proportional to each other, based on a ratio of the physical sizes on the die of the 4 respective transistor supplying the first collect current and the respective transistor s supplying the second collector current. 1 17. The wideband splitter of claim 14 wherein 2 current levels of the first and second collector currents are adjustable, 3 and 4 the current levels are adjustable to provide a gain amount that is s adjustable for the core amplifier. 1 18. A wideband splitter comprising 2 a core amplifier for receiving a single pair of differential input signals 3 across input terminals and providing first and second pairs of differential output 4 signals across output terminals, s the core amplifier including a first amplifier and a second amplifier for 6 receiving the single pair of differential input signals, 27 7 a bandwidth peaking network including a first coil and a first 8 resistor connected in series and a second coil and a second resistor connected in 9 series, a first node formed between the first coil and the first resistor and a \O i io second node formed between the second coil and the second resistor, and a third C' resistor connected between the first node and the second node, 12 the first amplifier coupled to an end of the first resistor and the second 13 amplifier coupled to an end of the second resistor, and 14 a common mode bias network coupled between the output terminals is for providing a voltage bias control feedback signal across the input terminals, 16 wherein the bandwidth peaking network is configured to increase the 17 frequency bandwidth of the core amplifier, 18 the core amplifier provides a substantially constant signal gain 19 between the received single pair of differential input signals and the first and second 2o pairs of differential output signals, and z1 the voltage bias control feedback signal provides a virtual ground 22 potential across the input terminals. 1 19. The wideband splitter of claim 18 wherein 2 the virtual ground potential across the input terminals is substantially 3 equal to a DC potential across the output terminals.
4. 28- The wideband splitter of claim 19 wherein 2 the differential pair of input signals and the first and second pairs of 00 3 differential output signals have substantially the same DC voltage bias.