AU2003292047A1 - Transistor equipped with a low-impedance base terminal - Google Patents

Transistor equipped with a low-impedance base terminal

Info

Publication number
AU2003292047A1
AU2003292047A1 AU2003292047A AU2003292047A AU2003292047A1 AU 2003292047 A1 AU2003292047 A1 AU 2003292047A1 AU 2003292047 A AU2003292047 A AU 2003292047A AU 2003292047 A AU2003292047 A AU 2003292047A AU 2003292047 A1 AU2003292047 A1 AU 2003292047A1
Authority
AU
Australia
Prior art keywords
low
base terminal
impedance base
transistor equipped
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003292047A
Inventor
Hubert Enichlmair
Jochen Kraft
Bernhard Loeffler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram AG
Original Assignee
Austriamicrosystems AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austriamicrosystems AG filed Critical Austriamicrosystems AG
Publication of AU2003292047A1 publication Critical patent/AU2003292047A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
AU2003292047A 2002-11-22 2003-11-19 Transistor equipped with a low-impedance base terminal Abandoned AU2003292047A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10254663.0 2002-11-22
DE2002154663 DE10254663B4 (en) 2002-11-22 2002-11-22 Transistor with low-impedance base terminal and method for manufacturing
PCT/EP2003/012967 WO2004049452A1 (en) 2002-11-22 2003-11-19 Transistor equipped with a low-impedance base terminal

Publications (1)

Publication Number Publication Date
AU2003292047A1 true AU2003292047A1 (en) 2004-06-18

Family

ID=32308668

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003292047A Abandoned AU2003292047A1 (en) 2002-11-22 2003-11-19 Transistor equipped with a low-impedance base terminal

Country Status (3)

Country Link
AU (1) AU2003292047A1 (en)
DE (1) DE10254663B4 (en)
WO (1) WO2004049452A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004053393B4 (en) * 2004-11-05 2007-01-11 Atmel Germany Gmbh Method for producing a vertically integrated cascode structure and vertically integrated cascode structure
DE102004053394B4 (en) 2004-11-05 2010-08-19 Atmel Automotive Gmbh Semiconductor arrangement and method for producing a semiconductor device
DE102004055147B4 (en) * 2004-11-16 2009-10-29 Austriamicrosystems Ag Method for producing a doped extrinsic base bipolar transistor
DE102005025937B4 (en) 2005-02-18 2009-11-26 Austriamicrosystems Ag Photosensitive device with increased sensitivity to blue, process for the preparation and operating method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296391A (en) * 1982-03-24 1994-03-22 Nec Corporation Method of manufacturing a bipolar transistor having thin base region
US4437897A (en) * 1982-05-18 1984-03-20 International Business Machines Corporation Fabrication process for a shallow emitter/base transistor using same polycrystalline layer
JP2970425B2 (en) * 1994-09-26 1999-11-02 日本電気株式会社 Manufacturing method of bipolar transistor
JP3186691B2 (en) * 1998-04-07 2001-07-11 日本電気株式会社 Semiconductor device and method for forming the same
US6417058B1 (en) * 2000-06-14 2002-07-09 Sony Corporation SiGe/poly for low resistance extrinsic base npn transistor

Also Published As

Publication number Publication date
DE10254663A1 (en) 2004-06-09
DE10254663B4 (en) 2005-08-04
WO2004049452A1 (en) 2004-06-10

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase