AU2003288772A1 - Method for preparing ruthenium oxide-thin film using electrodeposition - Google Patents

Method for preparing ruthenium oxide-thin film using electrodeposition

Info

Publication number
AU2003288772A1
AU2003288772A1 AU2003288772A AU2003288772A AU2003288772A1 AU 2003288772 A1 AU2003288772 A1 AU 2003288772A1 AU 2003288772 A AU2003288772 A AU 2003288772A AU 2003288772 A AU2003288772 A AU 2003288772A AU 2003288772 A1 AU2003288772 A1 AU 2003288772A1
Authority
AU
Australia
Prior art keywords
electrodeposition
thin film
ruthenium oxide
preparing ruthenium
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003288772A
Inventor
Oh Shim Joo
Kwang-Deog Jung
C. D. Lokhande
Bong-Ok Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Advanced Institute of Science and Technology KAIST
Original Assignee
Korea Advanced Institute of Science and Technology KAIST
Korea Institute of Science and Technology KIST
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Advanced Institute of Science and Technology KAIST, Korea Institute of Science and Technology KIST filed Critical Korea Advanced Institute of Science and Technology KAIST
Publication of AU2003288772A1 publication Critical patent/AU2003288772A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/50—Electroplating: Baths therefor from solutions of platinum group metals
    • C25D3/52—Electroplating: Baths therefor from solutions of platinum group metals characterised by the organic bath constituents used
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
AU2003288772A 2003-11-19 2003-12-30 Method for preparing ruthenium oxide-thin film using electrodeposition Abandoned AU2003288772A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2003-0082026 2003-11-19
KR1020030082026A KR100578734B1 (en) 2003-11-19 2003-11-19 Method for preparing thin film of ruthenium oxide using electrodeposition
PCT/KR2003/002891 WO2005050721A1 (en) 2003-11-19 2003-12-30 Method for preparing ruthenium oxide-thin film using electrodeposition

Publications (1)

Publication Number Publication Date
AU2003288772A1 true AU2003288772A1 (en) 2005-06-08

Family

ID=34617249

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003288772A Abandoned AU2003288772A1 (en) 2003-11-19 2003-12-30 Method for preparing ruthenium oxide-thin film using electrodeposition

Country Status (3)

Country Link
KR (1) KR100578734B1 (en)
AU (1) AU2003288772A1 (en)
WO (1) WO2005050721A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100521014C (en) * 2006-05-30 2009-07-29 中南大学 Method for preparing RuO2 coating cathode film material of super capacitor
KR100806678B1 (en) * 2006-07-13 2008-02-26 연세대학교 산학협력단 The fabrication method of carbon nanotube?metal oxide nanocomposite electrode
KR100970575B1 (en) 2008-05-07 2010-07-16 인하대학교 산학협력단 Method for preparation of RuO2 thin films having mesoporous structure by electrochemical deposition and RuO2 thin films prepared by the method
CN101525760B (en) * 2009-04-17 2011-03-23 中南大学 Electrodeposition technology for preparing electrode material of RuO2 of super capacitor
US20130087461A1 (en) 2011-10-11 2013-04-11 Bayer Intellectual Property Gmbh Catalyst coating and process for producing it
KR101391136B1 (en) * 2012-05-17 2014-06-19 아주대학교산학협력단 Method for manufacturing graphite film electro-deposited metal oxide for supercapacitor electrode and supercapacitor comprising the same
KR101583701B1 (en) 2014-04-25 2016-01-08 국민대학교산학협력단 A TRANSPARENT ELECTRODE COMPRISING CO-AXIAL RuO2-ITO NANOPILLARS FOR SUPERCAPACITOR, PREPARATION METHOD THEREOF AND A SUPERCAPACITOR COMPRISING SAID TRANSPARENT ELECTRODE
US11791108B2 (en) 2019-01-14 2023-10-17 B.G. Negev Technologies & Applications Ltd., At Ben-Gurion University Electrode and a pseudo-capacitor based on the electrode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1151365B (en) * 1982-03-26 1986-12-17 Oronzio De Nora Impianti ANODE FOR ELECTRILYTIC PROCEDURES
JP2731243B2 (en) * 1989-05-29 1998-03-25 ニチコン株式会社 Method for manufacturing solid electrolytic capacitor
JPH06146054A (en) * 1992-11-06 1994-05-27 Japan Energy Corp Ruthenium plating liquid
JP2000243453A (en) * 1999-02-24 2000-09-08 Nissan Motor Co Ltd Nonaqueous electrochemical capacitor
KR100377302B1 (en) * 2000-10-25 2003-03-26 김광범 The method of manufacturing a electrode of hydrous ruthenium oxide thin film electrode and the installation thereof
US6649211B2 (en) * 2002-02-28 2003-11-18 The United States Of America As Represented By The Secretary Of The Navy Selective deposition of hydrous ruthenium oxide thin films

Also Published As

Publication number Publication date
KR20050048173A (en) 2005-05-24
KR100578734B1 (en) 2006-05-12
WO2005050721A1 (en) 2005-06-02

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase