AU2003283567A1 - Template - Google Patents
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- AU2003283567A1 AU2003283567A1 AU2003283567A AU2003283567A AU2003283567A1 AU 2003283567 A1 AU2003283567 A1 AU 2003283567A1 AU 2003283567 A AU2003283567 A AU 2003283567A AU 2003283567 A AU2003283567 A AU 2003283567A AU 2003283567 A1 AU2003283567 A1 AU 2003283567A1
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- Australia
- Prior art keywords
- template
- polymer layer
- stress
- polymer
- layer
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/009—Manufacturing the stamps or the moulds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/2457—Parallel ribs and/or grooves
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31855—Of addition polymer from unsaturated monomers
- Y10T428/31935—Ester, halide or nitrile of addition polymer
Abstract
A template is formed from a layered structure comprising a substrate and a single-phase polymer layer positioned on the substrate. The polymer layer comprises a textured surface, the texturing being caused by induction of stress in the polymer layer. The template finds use in the manufacture of a structure on the nanometre scale, which comprises the steps of providing a template and molding a material on to the template, followed by removal of the molded material from the template to provide a structure on the nanometre scale, such as an array, a grid, an optical device or an electronic device. The template may be made by a method comprising the steps of depositing a layer of a single-, phase polymer on to a substrate, baking the resulting structure at a temperature below the glass transition temperature (T<SUB>g</SUB>) of the single-phase polymer, texturing a surface of the polymer layer by inducing stress in the polymer layer and annealing the resulting structure to provide a template.
Description
WO 2004/051371 PCT/GB2003/004911 1 TEMPLATE The present invention relates to a template for use in the manufacture of structures on the nanometre scale. 5 The provision of templates for use in the production of structures on the nanometre scale and, in particular, the provision of templates to produce very detailed and intricately patterned structures is very difficult. According to the present invention, a template is 10 provided which is formed from a layered structure comprising a substrate and a single-phase polymer layer positioned on the substrate, wherein the polymer layer comprises a textured surface, the texturing being caused by induction of stress in the polymer layer. 15 According to the present invention, a method of manufacture of a structure on the nanometre scale comprises the steps of providing a template as defined above, molding a material on to the template and removing the molded material from the template to provide the desired 20 structure. According to the present invention, a method of making a template comprises the steps of depositing a layer of a single-phase polymer on to a substrate, baking the resulting structure from the deposition step at a 25 temperature below the glass transition temperature (Tg) of the single-phase polymer, texturing a surface of the polymer layer by inducing stress in the polymer layer and annealing the resulting structure from the stress-induction step to provide a template. 30 The present invention therefore surprisingly utilises the fine structures generated by topographic instabilities in single-phase polymer films, and thus enables the production of highly intricate, organised structures on the nanometre scale, so-called "nanostructures". 35 The method of making a template according to the present invention provides a simple, fast and effective way of producing a template, which may then be used in the WO 2004/051371 PCT/GB2003/004911 2 production of nanostructures for use in a variety of applications. Patterning of the template may be controlled by optimisation of .the fabrication parameters, for example the temperature or polymer film thickness employed. 5 The template of the invention may be used in the manufacture of a variety of nanostructures such as arrays, grids and electronic or optical devices such as polarisers. Such structures have many applications not only in the fields of optics and electronics but also, for instance, in 10 molecular separation techniques, for example the separation of DNA. Also, unlike processes which involve the use of patterned substrates, the method of manufacture of the invention does not employ lithography and therefore provides a new avenue for the fabrication of 15 nanostructures. The substrate comprised in the template of the invention is preferably inorganic and more preferably comprises silicon. The thickness of the substrate will typically be approximately 0.5 mm. 20 Any single-phase polymer may be comprised in the template of invention, however, the single-phase polymer is preferably selected from polymethylglut arimide (PMGI) , polymethylmethacrylate (PMMA) and photoresists, such as AZ5214E, which is manufactured by Clarland GmbH and 25 comprises 2-methoxy-1-methylethylacetate as its main component. More preferably, the single-phase polymer is PMGI. The thickness of the single-phase polymer layer may vary depending on the intricacy of the desired texturing or patterning of the template, however, it is typically in the 30 range 50-300 nm. The template may additionally comprise -a thin, rigid layer comprising a semiconductor or a metal for example. This layer is-positioned on the single-phase polymer layer and will typically have a thickness of approximately 10 nm. 35 If the template comprises a semiconductor layer, the semiconductor will preferably be germanium, which is favourable for further pattern transformation.
WO 2004/051371 PCT/GB2003/004911 3 In the method of making a template according to the invention, the layer of single-phase polymer may be deposited on to the substrate by any conventional method such as coating, painting or spraying for example. The 5 resulting structure is then baked at a temperature below the glass transition temperature (Tg) of the single-phase polymer such that a degree of instability remains in the polymer to form a firm but flexible film on -top of the substrate. If a baking temperature of higher than the T9 10 of the polymer is employed, no instability remains in the polymer. If the single-phase polymer is PMGI, which has a T9 of approximately 200 0 C, a temperature of less than 2000C will. therefore typically be employed. Preferably the temperature of this baking step is in the range 120-200C. 15 A semiconductor layer may also be deposited on to the single-phase polymer layer. In this embodiment of the method according to the invention, the semiconductor layer may be deposited on. to. the polymer layer by any conventional method such as sputtering. The semiconductor 20 layer is preferably applied to a structure comprising a substrate coated with a single-phase polymer layer which has preferably already been subjected to a baking step at. a temperature of below the T9 of the polymer. Following deposition of the semiconductor layer on to the polymer 25 layer of such a structure, the resulting three-layer structure is then subjected to a further baking step again at a temperature of below the Tg-of the polymer layer. A surface of the polymer layer is textured via induction of stress into the polymer layer. The stress 30 induced in the polymer is typically in the range 0.5-1 MPa. The nature of the texture or pattern so-produced is highly dependent on the applied -stress, which can be applied such that highly organised and complicated patterns are achieved. For example, if a tensile or compressive 35 strength is -applied, a lined pattern in the direction of the stress will be generated in the surface of the polymer layer. Preferably, stress-induction in the polymer layer WO 2004/051371 PCT/GB2003/004911 4 results in the formation of parallel grooves in the surface of the polymer layer. These parallel grooves are created because, under stress, the formation of waves with a vector in the stress direction becomes energetically unfavourable 5 thus producing periodically ordered structures in the surface of the polymer layer. This idea is analogous to pulling a wrinkled table cloth in opposite directions. The polymer film thus provides a uniform striped pattern with a characteristic wavelength- (X) as the instability in the 10 polymer layer is controlled by spinodal dewetting, ie. the dewetted wave structure is characterised by -a single wavelength. One way in which stress may be induced in the polymer layer is via the use of a load bearing member comprising at 15 least one -contact surface which engages the surface to be textured. The load bearing member employed in this embodiment of the method of the invention may comprise polydimethylsiloxane (PDMS) , and typically has the shape of a truncated prism. The contact surface of the load bearing 20 member may be smooth or may itself be textured. The template of the invention is employed in the manufacture of structures on the nanometre scale, which are typically made from materials such as metals, alloys, ceramics and polymers. 25 The structures so-produced may include arrays, grids, electronic devices and optical devices, such as polarisers. Of particular interest are magnetic wire arrays, such as those comprising Permalloy (Ni 8 oFe 2 0 ) which may be used in device applications. 30 The present invention will now be described with reference to the following examples and to the accompanying drawings. In the drawings: Figure 1 is a side perspective view illustrating the stress-induction step of the method of making a template 35 according to the present invention, including an enlarged detail of a textured surface of the template of the invention; WO 2004/051371 PCT/GB2003/004911 5 Figure 2 shows atomic force microscope (ASM) images of (A) a randomly textured surface taken from a 150 nm thicknes-s PMGI film following baking at 160 0 C, and (B) an ordered surface resulting from stress-induction in a 250 nm 5 thickness PMGI film following baking at 160 0 C; Figure 3 illustrates surface patterns induced by localised stress and the analysis thereof. (A) shows a surface structure obtained by pressing a sample surface using a PDMS load bearing member which is patterned with 20 10. p.m square anti-dot patterns; (B) is a schematic illustration of the local stress distribution in sample A in which, for simplicity, only important stress components, -c are. shown; (C) shows a defect-induced structure ordering; (D) illustrates the distance dependence of the wavelength 15 in the vicinity of the defect; Figure 4 shows modulated wire patterns obtained by surface wave interference, as follows: (A) a uniform pattern (CD1) aligned at -160 0 C; (B) a double-line pattern observed after heating sample with. structure 20. shown in (A) for 10 min at 205*C; and (C) a single/double line modulated pattern obtained after heating the sample shown in (A) to 190 0 C for 10 min. Figure 5 shows scanning electron miscroscopy (SEM) images of the fabricated structures and magnetization 25 reversal measurement of the superalloy wires, as fo],lows: (A) and (B) are two .PMGI polymer structures (random and aligned, respectively) defined by sequential plasma etching, in which nanochannels were etched to the silicon substrate; (C) shows a Permalloy wire array obtained by 30 lift-off; .(D)- illustrates magnetic hysterisis loops. measured on 400 nm width and 30 nm thick Permalloy wire arrays, in which loop 1 was taken from an unpatterned film and loops 2 and 3 were taken when the magnetic field was applied along and perpendicular to the wire axis 35 respectively.
WO 2004/051371 PCT/GB2003/004911 6 Example 1: Formation of a template using a load member with a smooth contact surface. 250nm and 150nm thick layers of PMGI (Micro Chem Corp., PMGI SF6) were spin-coated separately on to silicon 5 substrates and baked at 170 0 C for 3.0 min. Then 10nm thick germanium was deposited on to the PMGI layers by sputtering. Random wave patterns were observed, when heating the samples above 130 0 C, which is well below the T9 of pure PMGI (approximately 200 0 C). 10 A PDMS elastic truncated prism with a smooth contact surface was pressed on to each sample surface as shown in Figure 1. This Figure shows that when pressure was applied to the PDMS prism, the intended lateral expansion of the PDMS prism generated a stress along the -film plane 15 and rendered the assembled surface structure ordered (panel 0), while on the free sample surface random wave patterns were formed (panel R). The atomic force microscope (AFM) images -of the two sample surfaces after heating at 160 0 C for 25 min are shown 20 in Figure 2. Figure 2A shows a 150 nm thickness film with a free surface, which comprises random waves, while in the case of an applied load to the 250 nm thickness film, the waves are well ordered as shown in Figure 2B. The area of the ordered structure can extend over the whole sample 25 (centimetre scale) with millimetre size domains induced by non-uniform deformation of the PDMS prism. In this example, the applied load was 0.5-1 MPa. A similar order of lateral expansion stress within the sample surface is expected because of the high Poisson!s 30 ratio of the PDMS. The mechanism of wave formation is based on the stress assisted dewetting of the polymer film involved, which is fundamentally different from those of other observed wave structures, such as mechanical compression induced surface buckles. After removal of the 35 applied load the sample was annealed at 160*C for ten hours and the ordered structure remained stable.
WO 2004/051371 PCT/GB2003/004911 7 -Example 2: Formation of a template using a load member with a patterned contact surface. A load member comprising a patterned contact surface was formed by casting PDMS against a 1.5 pm thick patterned 5 photoresist layer. . The resulting PDMS structure was cut into a rectangular shape to provide a PDMS load member patteriied with a 20 pm square anti-dot pattern. This member was pressed into a germanium-capped PMGI film at 160 0 C for 25 min. As the PMGI film was elastic, 10 there were clear traces of the PDMS patterns printed on the sample surfaces, as indicated by the letter P in Figure 3A. In additi-on to these patterns, a new set of square patterns (as indicated by P') was formed, which appeared as a copy of the initial PDMS pattern. 15 This additional formed patterning may be explained as follows. When the PDMS was compressed on the sample surface, the regions between holes started to expand as shown in Fig. 3B. The five typical expanding parts (the centre and four arms of a cross as indicated) generated a 20 compressive strain-in a square-framed region thus aligning the patterns along the frame. The asymmetry of the alignment of ripples is attributed to the existence of an off-normal force applied to the PDMS,- which generates a tension along the horizontal direction, as shovIn by the 25 open arrow in Figure .3B. In general, the value of applied stress is expected to be much smaller than the internal stress of a film, which is responsible for the film instability. The external stress-is used merely to suppress the structural disorder 30 induced by thermal fluctuation and to align the wavelike patterns. The internal stress, which causes film instability, is accumulated due to the temperature rise during annealing and can be expressed as: CO = E (a, -a,)dT (1) 35 WO 2004/051371 PCT/GB2003/004911 8 where To and T are, respectively, the stress free temperature and the temperature to which the film is heated, E, is the Young's modulus and v the Poission's ratio of the germanium film, and c (cL) is the thermal 5 expansion coefficient of the polymer film. For a PMGI film without a germanium capping layer no instability is found and the substrate effect dan therefore be neglected. It is difficult to calculate the value of ao precisely since the value of a, depends strongly, on the 10 -temperature and an additional polymerized layer could form at the interface between the polymer and the capping (germanium) layers. However, a reasonable estimate gives ao of approximately 100 MPa, based on E / (1- ve) -10 1 Pa and (o,-a.) (T- T.) ~ 10~. This is, about two 15 orders higher than the applied stress.. Thus, the applied stress only acts as a small perturbation to the isotropic internal stress ao and introduces an anisotropy which leads the structure to order. This can be further understood through the 20 examination of the ordering of a local structure generated by a defect centre. Figure 3C shows a typical structure at the vicinity of a defect on a load free sample. When a defect, for example a dust particle or pin hole, exists in a polymer film restrained by a 25 capping (germanium) layer, the break of .film continuity leads to a redistribution of stress inside the film. By expressing the radial and traverse components of the stress around the defect as or and -a,, respectively, this gives: 30 ay = 7, (1-e-/) , (2a) a = c0 (1-vce~k) , (2b) 35 where r is the radius calculated from the edge of the defect and E is a characteristic length of the stress WO 2004/051371 PCT/GB2003/004911 9 distribution. For stress-assisted instability in a rubber-like polymer film, the relationship between the surface wavelength and stress is A=K/O. 2, where K is a constant. Considering that the redistribution of 5 material during formation of the .wavelike structure is caused by the internal stress along the wave vector direction, it follows that:
A
0 10 (1 - 1')2 (3) where Ao is the wave length of the structure far away from the defect centre. Taking v,=0.4, the characteristic length was found to be about 10 pm by 15 fitting equation .(3) with experimental results as shown in Figure 3D. If the radius of the whole ordered region is taken to be 20pm (see Figure 3C), a value of the stress anisotropy required for ordering the structures in a sample from equation(2) may be obtained as follows: 20 at- ~4 (4) a~t+ 0r This result confirms that a small perturbation in the 25 stress can dramatically modify the -structure morphology. Example 3: Provision of complex patterning via changes in experimental conditions. This Example provides another method of making a 30 template , the so-called "surface wave interference", to create more complex patterns. The wavelength of surface patterns is normally determined by the fastest growing wave mode in the system and strongly depends on experimental parameters. If a wave pattern CD,= C(t)e 2 is WO 2004/051371 PCT/GB2003/004911 10 the characteristic mode in a given experimental condition, a rapid change of the sample condition will create a new characteristic wave 0 2 = 6 2 (t)e(*+ . In the time period when the decaying wave (D and arising wave 02 5 co-exist a new pattern induced by their interference is observed. Figure 4A shows an aligned wave (DI created at 160 0 C and Figure 4B shows a double line pattern obtained after further heating the sample for 10 min at 205 0 C without 10 the application of a load. This example shows that the dominant surface wavelength of the film at 205 0 C is about twice of that at 160 0 C (q2~qi/2) due to strong softening of the polymer near its glass transition point. Figure 4B illustrates the pattern formed in a film which has not 15 yet reached its steady state. This may be expressed as 4)=d0 + (D2= 6(+(t)e+ 8 2 . The value of the phase shift T is required for pattern symmetry. Similarly, the wavelength obtained at 190 0 C is about 1.7 times of that obtained at 160 *C. After heating the sample with wave 20 (D, to 190 0 C for 10 min a single/double line modulated structure can be found, as shown in Figure. 4C, which agrees well with cV = cli + ('2 = +6 ( In order to utilise such an interference effect to create complex patterns, it would be ideal if the 25 wavelengths of both cdj and 02 could be chosen as desired. There is no limit to the number of the waves which may be included, and the obtained wave (c' 1 + c2) may further interfere with another wave 03 to create more complex patterning, e.g. (D= [ (Di+ 0 2 ) + cl,]+.... Desired structures 30 displaying abundant line arrangements with the appearance of bar-codes are possible. Such observed interference WO 2004/051371 PCT/GB2003/004911 11 patterns and their evolution process are of use in the fundamental study of dynamic processes of polymer diffusion and creep, and wave mode selection due to film instability. 5 Example 4: Fabrication of a.nanostructure. The wavelength of the lined patterns obtained in the above-described germanium-capped PMGI template was in the micron to submicron range, and their amplitude was around 10 20nm. A 40 nm thick PMMA (Micro Chem Corp. 950 PMMA A2) resist layer was spin-coated on to the template surface and the resulting structure was baked at 160*C for 5 min before being cooled to room temperature. A glass wafer 15 was employed to protect the surface flatness of the PMMA layer. After partially removing the PMMA- layer by oxygen (02) plasma etching, the retaining PMMA in the trenches of the template was used as mask during etching of the thin germanium layer by sulphur hexafluoride (SF6). 20 Subsequently the patterned germanium layer was used as another mask during etching through the PMGI by O2 plasma. Finally, a layer of functional material, such as metal, was deposited on to the structure and the desired nanostructures were obtained by lifting off the rest of 25 the PMGI polymer. By varying the parameters employed in the etching of the PMMA layer, the line width of the etched PMGI could be controlled. Figure 5A and 5B show, respectively, typical SEM images of random and ordered polymer 3-0 structures on a silicon substrate after the final reactive ion etching (RIE). The channel width obtained was approximately 150 nm and the whole pattern was uniform and defect-free over a large area. Figure 5C shows a magnetic wire array of 30nm thick 35 Permalloy (Ni 8 oFe 2 0 ) obtained in this way. In recent years, such fine patterned magnetic wires have attracted great scientific interest in-particular in device WO 2004/051371 PCT/GB2003/004911 12 applications. The magnetization reversal of fabricated permalloy wires were studied by .the magneto-optic Kerr effect technique and the results-are shown in Figure 5D. Compared to the unpatterned film (loop 1), the large 5 increase in the coercivity obtained with the field along the wire (loop 2) is attributed to the shape anisotropy induced complication of magnetization reversal, such as the so-called "bucking effect" etc. When the field was applied perpendicular to the wires, a remarkable increase 10 in the saturation field was observed (loop 3). This could be explained by the "magnetic charges" induced along the wire edges, resulting a magnetically -hard behaviour in the direction perpendicular to the wires. 15
Claims (26)
1. A template formed from a layered structure comprising a substrate and a single-phase polymer layer 5 positioned on the substrate, wherein the polymer layer comprises a textured surface, the texturing being caused by induction of stress in the polymer layer.
2. A template- according to claim 1, additionally comprising a semiconductor layer positioned on the 10 polymer layer.
3. A template according to claim 1 or claim 2, wherein the single-phase polymer is selected from polymethylglutarimide (PMGI), polymethylmethacrylate (PMMA) and photoresist AZ5214E. 15
4. A template according to claim 2 or claim 3, wherein the semiconductor is germanium.
5. A template according to any preceding claim, wherein the substrate comprises silicon.
6. A template according to any preceding claim, wherein '20 the textured surface comprises parallel grooves.
7. A template according to any preceding claim, wherein the thickness of the single-phase polymer layer is 50-300 nm.
8. A template according to any of claims 2 to 6, 25 wherein the thickness of the semiconductor layer is approximately 10 nm.
9. A method of manufacture of a structure on the nanometre scale comprising the steps of: providing a template as defined in any of claims 1 30 to 8; molding a material on to the template; and removing the molded material from the template to provide a structure on the nanometre scale.
10. A method according to claim 9, wherein the structure 35 is an array, a grid, an optical device or an electronic device.
11. A method according to claim 10, wherein the optical WO 2004/051371 PCT/GB2003/004911 14 device is a polariser.
12. A method according to claim 10, wherein the array is a magnetic wire array.
13. A method according to claim 12, wherein the magnetic 5 wire array comprises Permalloy.
14. A method of making a template comprising the steps. of: depositing a layer of a single-phase polymer on to a substrate; 10 baking the resulting structure from the deposition step at a temperature below the glass transition temperature (Tg) of the single-phase polymer; texturing a surface of the polymer layer by inducing stress in the polymer layer; and 15 annealing the resulting structure from the stress induction step to provide a template.
15. A method according to claim 14 additionally comprising the step of depositing a semiconductor layer on to the polymer layer. 20
16. A method according to claim 14 or claim 15, wherein the temperature employed in the baking step is in the range 120-200 *C.
17. A method according to any of claims 14 to 16, wherein the stress induced in the polymer is in the range 25 0.5-1 MPa.
18. A method according to any of claims 14 to 17, wherein stress is induced -in the polymer layer using a load bearing member comprising at least one contact surface engaging the surface to be textured. 30
19. A method according to claim 18, wherein the load bearing member comprises polydimethylsiloxane (PDMS).
20. A method according to claim 18 or claim 19, wherein the contact surface of the load bearing member is textured. 35
21. A method according to any of claims 14 to 20, wherein the single-phase polymer is selected from PMGI, PMMA and photoresist AZ5214E. WO 2004/051371 PCT/GB2003/004911 15
22. A method according to any of claims 15 to 21 wherein the semiconductor is germanium.
23. A method according to any of claims 14 to 22, wherein the substrate comprises silicon. 5.
24. A method according to any of claims 14 to 23, wherein stress'-induction in the polymer layer results in the formation of parallel grooves in the surface'of the polymer layer.
25. A method according to any of claims 14 to 24, 10 wherein the thickness of the polymer layer is 50-300 nm.
26. A method according to any of claims 15 to 25, wherein the thickness of the semiconductor layer is approximately 10 nm. 15
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0227902.4A GB0227902D0 (en) | 2002-11-29 | 2002-11-29 | Template |
GB0227902.4 | 2002-11-29 | ||
PCT/GB2003/004911 WO2004051371A2 (en) | 2002-11-29 | 2003-11-12 | Template |
Publications (1)
Publication Number | Publication Date |
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AU2003283567A1 true AU2003283567A1 (en) | 2004-06-23 |
Family
ID=9948791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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AU2003283567A Abandoned AU2003283567A1 (en) | 2002-11-29 | 2003-11-12 | Template |
Country Status (16)
Country | Link |
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US (1) | US20050281982A1 (en) |
EP (1) | EP1565787B1 (en) |
JP (1) | JP4351169B2 (en) |
KR (1) | KR20050102078A (en) |
CN (1) | CN1717625A (en) |
AT (1) | ATE422682T1 (en) |
AU (1) | AU2003283567A1 (en) |
BR (1) | BR0316636A (en) |
CA (1) | CA2507521A1 (en) |
DE (1) | DE60326163D1 (en) |
GB (1) | GB0227902D0 (en) |
IL (1) | IL168521A (en) |
MX (1) | MXPA05005766A (en) |
MY (1) | MY139728A (en) |
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2002
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2003
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- 2003-11-12 KR KR1020057009348A patent/KR20050102078A/en not_active Application Discontinuation
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- 2003-11-12 DE DE60326163T patent/DE60326163D1/en not_active Expired - Lifetime
- 2003-11-12 EP EP03775543A patent/EP1565787B1/en not_active Expired - Lifetime
- 2003-11-12 US US10/534,931 patent/US20050281982A1/en not_active Abandoned
- 2003-11-12 MX MXPA05005766A patent/MXPA05005766A/en not_active Application Discontinuation
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- 2003-11-12 AT AT03775543T patent/ATE422682T1/en not_active IP Right Cessation
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- 2003-11-12 BR BR0316636-8A patent/BR0316636A/en not_active IP Right Cessation
- 2003-11-20 MY MYPI20034452A patent/MY139728A/en unknown
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TW200415119A (en) | 2004-08-16 |
JP4351169B2 (en) | 2009-10-28 |
BR0316636A (en) | 2005-10-11 |
CN1717625A (en) | 2006-01-04 |
CA2507521A1 (en) | 2004-06-17 |
IL168521A (en) | 2010-05-17 |
JP2006508825A (en) | 2006-03-16 |
ATE422682T1 (en) | 2009-02-15 |
WO2004051371A3 (en) | 2004-10-07 |
EP1565787A2 (en) | 2005-08-24 |
DE60326163D1 (en) | 2009-03-26 |
EP1565787B1 (en) | 2009-02-11 |
US20050281982A1 (en) | 2005-12-22 |
GB0227902D0 (en) | 2003-01-08 |
MXPA05005766A (en) | 2005-09-21 |
WO2004051371A2 (en) | 2004-06-17 |
MY139728A (en) | 2009-10-30 |
KR20050102078A (en) | 2005-10-25 |
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