AU2003283185A1 - Layer arrangement of hetero-connected semiconductor layers, comprising at least one intermediate separation layer, and method for the production thereof - Google Patents

Layer arrangement of hetero-connected semiconductor layers, comprising at least one intermediate separation layer, and method for the production thereof

Info

Publication number
AU2003283185A1
AU2003283185A1 AU2003283185A AU2003283185A AU2003283185A1 AU 2003283185 A1 AU2003283185 A1 AU 2003283185A1 AU 2003283185 A AU2003283185 A AU 2003283185A AU 2003283185 A AU2003283185 A AU 2003283185A AU 2003283185 A1 AU2003283185 A1 AU 2003283185A1
Authority
AU
Australia
Prior art keywords
layer
production
hetero
semiconductor layers
intermediate separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003283185A
Other versions
AU2003283185A8 (en
Inventor
David Fuertes Marron
Martha Christina Lux-Steiner
Alexander Meeder
Thomas Schedel-Niedrig
Roland Wurz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hahn Meitner Institut Berlin GmbH
Original Assignee
Hahn Meitner Institut Berlin GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hahn Meitner Institut Berlin GmbH filed Critical Hahn Meitner Institut Berlin GmbH
Publication of AU2003283185A8 publication Critical patent/AU2003283185A8/en
Publication of AU2003283185A1 publication Critical patent/AU2003283185A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Layer arrangement comprises a substrate (2), a metal film (3), a metal dichalcogenide separating layer (4) and a chalcogenide semiconductor layer (6). The crystallographic orientation of the separating layer is such that the c-axis lies perpendicularly to the metal film parallel to surface of the metal film and next to the chalcogenide semiconductor layer. An Independent claim is also included for a process for the production of a solar cell based on the layer arrangement.
AU2003283185A 2002-10-09 2003-10-09 Layer arrangement of hetero-connected semiconductor layers, comprising at least one intermediate separation layer, and method for the production thereof Abandoned AU2003283185A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10247735.3 2002-10-09
DE10247735A DE10247735B3 (en) 2002-10-09 2002-10-09 Layer arrangement used in the production of thin layer solar cells comprises a substrate, a metal film, a metal dichalcogenide separating layer and a chalcogenide semiconductor layer
PCT/DE2003/003371 WO2004034478A2 (en) 2002-10-09 2003-10-09 Layer arrangement of hetero-connected semiconductor layers, comprising at least one intermediate separation layer, and method for the production thereof

Publications (2)

Publication Number Publication Date
AU2003283185A8 AU2003283185A8 (en) 2004-05-04
AU2003283185A1 true AU2003283185A1 (en) 2004-05-04

Family

ID=32010473

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003283185A Abandoned AU2003283185A1 (en) 2002-10-09 2003-10-09 Layer arrangement of hetero-connected semiconductor layers, comprising at least one intermediate separation layer, and method for the production thereof

Country Status (6)

Country Link
EP (1) EP1556901B1 (en)
AT (1) ATE397291T1 (en)
AU (1) AU2003283185A1 (en)
DE (2) DE10247735B3 (en)
ES (1) ES2305531T3 (en)
WO (1) WO2004034478A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008051520A1 (en) 2008-10-13 2010-04-22 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh A method of producing a (001) textured crystal layer of a photoactive lattice semiconductor on a metallically conductive layer involving a metal promoter

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4314256A (en) * 1979-06-12 1982-02-02 Petrov Vyacheslav V Radiation-sensitive material and method for recording information on radiation-sensitive material
EP1200995A1 (en) * 1999-07-13 2002-05-02 Eidgenössische Technische Hochschule (ETH) Flexible thin-layer solar cell

Also Published As

Publication number Publication date
AU2003283185A8 (en) 2004-05-04
WO2004034478A2 (en) 2004-04-22
WO2004034478A3 (en) 2004-07-29
ATE397291T1 (en) 2008-06-15
EP1556901B1 (en) 2008-05-28
EP1556901A2 (en) 2005-07-27
DE50309928D1 (en) 2008-07-10
ES2305531T3 (en) 2008-11-01
DE10247735B3 (en) 2004-04-15

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase