AU2003281011A1 - Film forming method and film forming apparatus - Google Patents

Film forming method and film forming apparatus

Info

Publication number
AU2003281011A1
AU2003281011A1 AU2003281011A AU2003281011A AU2003281011A1 AU 2003281011 A1 AU2003281011 A1 AU 2003281011A1 AU 2003281011 A AU2003281011 A AU 2003281011A AU 2003281011 A AU2003281011 A AU 2003281011A AU 2003281011 A1 AU2003281011 A1 AU 2003281011A1
Authority
AU
Australia
Prior art keywords
film forming
forming apparatus
forming method
film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003281011A
Inventor
Susumu Arima
Yumiko Kawano
Hideaki Yamasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003281011A1 publication Critical patent/AU2003281011A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
AU2003281011A 2002-07-10 2003-07-10 Film forming method and film forming apparatus Abandoned AU2003281011A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-201534 2002-07-10
JP2002201534A JP2004047633A (en) 2002-07-10 2002-07-10 Method and apparatus for depositing film
PCT/JP2003/008803 WO2004008518A1 (en) 2002-07-10 2003-07-10 Film forming method and film forming apparatus

Publications (1)

Publication Number Publication Date
AU2003281011A1 true AU2003281011A1 (en) 2004-02-02

Family

ID=30112570

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003281011A Abandoned AU2003281011A1 (en) 2002-07-10 2003-07-10 Film forming method and film forming apparatus

Country Status (3)

Country Link
JP (1) JP2004047633A (en)
AU (1) AU2003281011A1 (en)
WO (1) WO2004008518A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4884104B2 (en) 2006-06-29 2012-02-29 富士通セミコンダクター株式会社 Semiconductor device including capacitor and manufacturing method thereof
JP2011146507A (en) 2010-01-14 2011-07-28 Renesas Electronics Corp Semiconductor device and method of manufacturing the same
JP2013021012A (en) 2011-07-07 2013-01-31 Renesas Electronics Corp Semiconductor device manufacturing method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003519913A (en) * 2000-01-06 2003-06-24 アプライド マテリアルズ インコーポレイテッド Low heat balance metal oxide deposition for capacitor structures

Also Published As

Publication number Publication date
JP2004047633A (en) 2004-02-12
WO2004008518A1 (en) 2004-01-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase