AU2003276387A8 - Magnetic memory device - Google Patents
Magnetic memory deviceInfo
- Publication number
- AU2003276387A8 AU2003276387A8 AU2003276387A AU2003276387A AU2003276387A8 AU 2003276387 A8 AU2003276387 A8 AU 2003276387A8 AU 2003276387 A AU2003276387 A AU 2003276387A AU 2003276387 A AU2003276387 A AU 2003276387A AU 2003276387 A8 AU2003276387 A8 AU 2003276387A8
- Authority
- AU
- Australia
- Prior art keywords
- memory device
- magnetic memory
- magnetic
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/278,005 | 2002-10-22 | ||
US10/278,008 | 2002-10-22 | ||
US10/278,008 US6775183B2 (en) | 2002-10-22 | 2002-10-22 | Magnetic memory device employing giant magnetoresistance effect |
US10/278,005 US6639830B1 (en) | 2002-10-22 | 2002-10-22 | Magnetic memory device |
PCT/GB2003/004546 WO2004038723A2 (en) | 2002-10-22 | 2003-10-22 | Magnetic memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
AU2003276387A8 true AU2003276387A8 (en) | 2004-05-13 |
AU2003276387A1 AU2003276387A1 (en) | 2004-05-13 |
Family
ID=32179471
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003274354A Abandoned AU2003274354A1 (en) | 2002-10-22 | 2003-10-22 | Magnetic memory device |
AU2003276387A Abandoned AU2003276387A1 (en) | 2002-10-22 | 2003-10-22 | Magnetic memory device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003274354A Abandoned AU2003274354A1 (en) | 2002-10-22 | 2003-10-22 | Magnetic memory device |
Country Status (3)
Country | Link |
---|---|
EP (2) | EP1556862A2 (en) |
AU (2) | AU2003274354A1 (en) |
WO (2) | WO2004038723A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8004881B2 (en) | 2007-12-19 | 2011-08-23 | Qualcomm Incorporated | Magnetic tunnel junction device with separate read and write paths |
SG175482A1 (en) * | 2010-05-04 | 2011-11-28 | Agency Science Tech & Res | Multi-bit cell magnetic memory with perpendicular magnetization and spin torque switching |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5541868A (en) * | 1995-02-21 | 1996-07-30 | The United States Of America As Represented By The Secretary Of The Navy | Annular GMR-based memory element |
GB2343308B (en) * | 1998-10-30 | 2000-10-11 | Nikolai Franz Gregor Schwabe | Magnetic storage device |
US6611405B1 (en) * | 1999-09-16 | 2003-08-26 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory device |
US6269018B1 (en) * | 2000-04-13 | 2001-07-31 | International Business Machines Corporation | Magnetic random access memory using current through MTJ write mechanism |
FR2817998B1 (en) * | 2000-12-07 | 2003-01-10 | Commissariat Energie Atomique | SPIN POLARIZATION MAGNETIC DEVICE WITH MAGNIFICATION ROTATION, MEMORY AND WRITING METHOD USING THE DEVICE |
FR2817999B1 (en) * | 2000-12-07 | 2003-01-10 | Commissariat Energie Atomique | MAGNETIC DEVICE WITH POLARIZATION OF SPIN AND A STRIP (S) TRI-LAYER (S) AND MEMORY USING THE DEVICE |
-
2003
- 2003-10-22 AU AU2003274354A patent/AU2003274354A1/en not_active Abandoned
- 2003-10-22 WO PCT/GB2003/004546 patent/WO2004038723A2/en not_active Application Discontinuation
- 2003-10-22 EP EP03758339A patent/EP1556862A2/en not_active Withdrawn
- 2003-10-22 WO PCT/GB2003/004552 patent/WO2004038725A2/en not_active Application Discontinuation
- 2003-10-22 EP EP03809367A patent/EP1559106A2/en not_active Withdrawn
- 2003-10-22 AU AU2003276387A patent/AU2003276387A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2004038725A3 (en) | 2005-05-06 |
AU2003274354A1 (en) | 2004-05-13 |
EP1559106A2 (en) | 2005-08-03 |
WO2004038723A3 (en) | 2005-05-06 |
WO2004038723A2 (en) | 2004-05-06 |
EP1556862A2 (en) | 2005-07-27 |
AU2003276387A1 (en) | 2004-05-13 |
WO2004038725A2 (en) | 2004-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |