AU2003255127A1 - Thin film transistor array substrate and its manufacturing method - Google Patents

Thin film transistor array substrate and its manufacturing method

Info

Publication number
AU2003255127A1
AU2003255127A1 AU2003255127A AU2003255127A AU2003255127A1 AU 2003255127 A1 AU2003255127 A1 AU 2003255127A1 AU 2003255127 A AU2003255127 A AU 2003255127A AU 2003255127 A AU2003255127 A AU 2003255127A AU 2003255127 A1 AU2003255127 A1 AU 2003255127A1
Authority
AU
Australia
Prior art keywords
manufacturing
thin film
film transistor
array substrate
transistor array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003255127A
Inventor
Ko-Chin Yang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Quanta Display Japan Inc
Quanta Display Inc
Original Assignee
Quanta Display Japan Inc
Quanta Display Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Quanta Display Japan Inc, Quanta Display Inc filed Critical Quanta Display Japan Inc
Publication of AU2003255127A1 publication Critical patent/AU2003255127A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1288Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
AU2003255127A 2003-08-21 2003-08-21 Thin film transistor array substrate and its manufacturing method Abandoned AU2003255127A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2003/000702 WO2005020313A1 (en) 2003-08-21 2003-08-21 Thin film transistor array substrate and its manufacturing method

Publications (1)

Publication Number Publication Date
AU2003255127A1 true AU2003255127A1 (en) 2005-03-10

Family

ID=34201004

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003255127A Abandoned AU2003255127A1 (en) 2003-08-21 2003-08-21 Thin film transistor array substrate and its manufacturing method

Country Status (2)

Country Link
AU (1) AU2003255127A1 (en)
WO (1) WO2005020313A1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100225098B1 (en) * 1996-07-02 1999-10-15 구자홍 Method of fabrication of thin transistor
TW413949B (en) * 1998-12-12 2000-12-01 Samsung Electronics Co Ltd Thin film transistor array panels for liquid crystal displays and methods of manufacturing the same
KR100437474B1 (en) * 2001-04-04 2004-06-23 삼성에스디아이 주식회사 Dual channel TFT and Method for Fabricating the same

Also Published As

Publication number Publication date
WO2005020313A1 (en) 2005-03-03

Similar Documents

Publication Publication Date Title
GB2396242B (en) Manufacturing method of array substrate having colour filter on thin film transistor structure
AU2002313948A1 (en) A wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same
TWI366269B (en) Thin film transistor array panel using organic semiconductor and a method for manufacturing the same
TWI348568B (en) Thin film transistor array panel and manufacturing method thereof
EP1543546B8 (en) Process for fabricating an isolated field effect transistor in an epi-less substrate
AU2002367339A1 (en) A thin film transistor array panel and a method for manufacturing the same
TWI347677B (en) Thin film transistor array panel and manufacturing method thereof
AU2002246410A1 (en) A contact structure of a wiring line and method manufacturing the same, and thin film transistor array substrate including the contact structure and method manufacturing the same
AU2002329100A1 (en) Method for manufacturing thin film transistor array panel for display device
TWI348041B (en) Thin film transistor array panel
AU2003215959A1 (en) Thin film transistor substrate and method for forming metal wire thereof
GB2439599B (en) Thin film transistor array substrate and method fabricating the same
TWI318458B (en) Thin film transistor substrate and manufacturing method thereof
AU2002329098A1 (en) An etchant for a wiring, a method for manufacturing the wiring using the etchant, a thin film transistor array panel including the wiring, and a method for manufacturing the same
GB0326376D0 (en) Array substrate for LCD and manufacturing method thereof
AU2002321847A1 (en) A wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same
AU2002328455A1 (en) Thin film transistor array panel
TWI372464B (en) Organic thin film transistor array panel and manufacturing method thereof
AU2003292773A1 (en) Thin film capacitor and method for manufacturing same
TWI368256B (en) Optic mask and manufacturing method of thin film transistor array panel using the same
TWI368326B (en) Thin film transistor array panel and manufacturing method thereof
AU2003212673A1 (en) Thin film transistor array panel and method manufacturing thereof
AU2002255377A1 (en) Contact portion of semiconductor device, and method for manufacturing the same, thin film transistor array panel for display device including the contact portion, and method for manufacturing the same
GB2403733B (en) Thin film structure and manufacturing method thereof
AU2003277601A1 (en) Method of forming film on substrate

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase