AU2003243996A1 - Semiconductor producing apparatus - Google Patents

Semiconductor producing apparatus

Info

Publication number
AU2003243996A1
AU2003243996A1 AU2003243996A AU2003243996A AU2003243996A1 AU 2003243996 A1 AU2003243996 A1 AU 2003243996A1 AU 2003243996 A AU2003243996 A AU 2003243996A AU 2003243996 A AU2003243996 A AU 2003243996A AU 2003243996 A1 AU2003243996 A1 AU 2003243996A1
Authority
AU
Australia
Prior art keywords
producing apparatus
semiconductor producing
semiconductor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003243996A
Inventor
Masahiro Shimizu
Yoshihide Tada
Minoru Yazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003243996A1 publication Critical patent/AU2003243996A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/0033Heating devices using lamps
    • H05B3/0038Heating devices using lamps for industrial applications
    • H05B3/0047Heating devices using lamps for industrial applications for semiconductor manufacture
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2203/00Aspects relating to Ohmic resistive heating covered by group H05B3/00
    • H05B2203/032Heaters specially adapted for heating by radiation heating

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
AU2003243996A 2002-06-27 2003-06-26 Semiconductor producing apparatus Abandoned AU2003243996A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-188005 2002-06-27
JP2002188005 2002-06-27
PCT/JP2003/008125 WO2004003984A1 (en) 2002-06-27 2003-06-26 Semiconductor producing apparatus

Publications (1)

Publication Number Publication Date
AU2003243996A1 true AU2003243996A1 (en) 2004-01-19

Family

ID=29996807

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003243996A Abandoned AU2003243996A1 (en) 2002-06-27 2003-06-26 Semiconductor producing apparatus

Country Status (3)

Country Link
AU (1) AU2003243996A1 (en)
TW (1) TW200417270A (en)
WO (1) WO2004003984A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011063086A1 (en) 2009-11-19 2011-05-26 Halliburton Energy Services, Inc. Downhole optical radiometry tool
AU2009356978B2 (en) 2009-12-23 2013-08-01 Halliburton Energy Services, Inc. Interferometry-based downhole analysis tool
BR112012013906A2 (en) 2010-06-16 2016-04-26 Halliburton Energy Services Inc light source

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0295155U (en) * 1988-07-05 1990-07-30
JP2668829B2 (en) * 1988-07-15 1997-10-27 ウシオ電機株式会社 How to turn on the heater lamp
JP2781616B2 (en) * 1989-09-29 1998-07-30 株式会社日立製作所 Semiconductor wafer heat treatment equipment
JPH04336423A (en) * 1991-05-13 1992-11-24 Sony Corp Plasma processing apparatus
JPH0582107A (en) * 1991-09-24 1993-04-02 Toshiba Lighting & Technol Corp Halogen lamp having dichroic mirror
JP3046446B2 (en) * 1992-03-17 2000-05-29 三菱電機株式会社 Semiconductor manufacturing equipment
JP2000269156A (en) * 1999-03-18 2000-09-29 Ulvac Japan Ltd Substrate heater and preparation chamber
TW523791B (en) * 2000-09-01 2003-03-11 Semiconductor Energy Lab Method of processing beam, laser irradiation apparatus, and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
WO2004003984A1 (en) 2004-01-08
TW200417270A (en) 2004-09-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase