AU2002351774A8 - Non-volatile memory and method for operating a non-volatile memory - Google Patents

Non-volatile memory and method for operating a non-volatile memory

Info

Publication number
AU2002351774A8
AU2002351774A8 AU2002351774A AU2002351774A AU2002351774A8 AU 2002351774 A8 AU2002351774 A8 AU 2002351774A8 AU 2002351774 A AU2002351774 A AU 2002351774A AU 2002351774 A AU2002351774 A AU 2002351774A AU 2002351774 A8 AU2002351774 A8 AU 2002351774A8
Authority
AU
Australia
Prior art keywords
volatile memory
operating
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002351774A
Other versions
AU2002351774A1 (en
Inventor
Engelbert Wittich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2002351774A8 publication Critical patent/AU2002351774A8/en
Publication of AU2002351774A1 publication Critical patent/AU2002351774A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50012—Marginal testing, e.g. race, voltage or current testing of timing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/10—Aspects relating to interfaces of memory device to external buses
    • G11C2207/104—Embedded memory devices, e.g. memories with a processing device on the same die or ASIC memory designs
AU2002351774A 2001-12-21 2002-10-21 Non-volatile memory and method for operating a non-volatile memory Abandoned AU2002351774A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0130578A GB2383455B (en) 2001-12-21 2001-12-21 Non-volatile memory and method for operating a non-volatile memory
GB0130578.8 2001-12-21
PCT/EP2002/011767 WO2003054888A2 (en) 2001-12-21 2002-10-21 Non-volatile memory and method for operating a non-volatile memory

Publications (2)

Publication Number Publication Date
AU2002351774A8 true AU2002351774A8 (en) 2003-07-09
AU2002351774A1 AU2002351774A1 (en) 2003-07-09

Family

ID=9928106

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002351774A Abandoned AU2002351774A1 (en) 2001-12-21 2002-10-21 Non-volatile memory and method for operating a non-volatile memory

Country Status (4)

Country Link
AU (1) AU2002351774A1 (en)
GB (1) GB2383455B (en)
TW (1) TW200301487A (en)
WO (1) WO2003054888A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7447944B2 (en) * 2005-04-29 2008-11-04 Freescale Semiconductor, Inc. Predictive methods and apparatus for non-volatile memory
US8117375B2 (en) * 2007-10-17 2012-02-14 Micron Technology, Inc. Memory device program window adjustment
US10140040B1 (en) 2017-05-25 2018-11-27 Micron Technology, Inc. Memory device with dynamic program-verify voltage calibration
US10664194B2 (en) 2018-05-16 2020-05-26 Micron Technology, Inc. Memory system with dynamic calibration using a variable adjustment mechanism
US10990466B2 (en) 2018-06-20 2021-04-27 Micron Technology, Inc. Memory sub-system with dynamic calibration using component-based function(s)
US11188416B2 (en) 2018-07-12 2021-11-30 Micron Technology, Inc. Enhanced block management for a memory sub-system
US11113129B2 (en) * 2018-07-13 2021-09-07 Micron Technology, Inc. Real time block failure analysis for a memory sub-system
US10936246B2 (en) 2018-10-10 2021-03-02 Micron Technology, Inc. Dynamic background scan optimization in a memory sub-system

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5532962A (en) * 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
JPH10255487A (en) * 1997-03-10 1998-09-25 Fujitsu Ltd Semiconductor memory
US6108241A (en) * 1999-07-01 2000-08-22 Micron Technology, Inc. Leakage detection in flash memory cell
JP2001076496A (en) * 1999-09-02 2001-03-23 Fujitsu Ltd Preventing circuit for erroneous data of non-volatile memory and its method
DE19964012A1 (en) * 1999-12-30 2001-07-12 Bosch Gmbh Robert Refreshing memory contents of read only memory cell involves comparing current memory cell charge state with threshold value above reading charge, raising charge state if below threshold

Also Published As

Publication number Publication date
GB0130578D0 (en) 2002-02-06
GB2383455B (en) 2004-02-25
GB2383455A (en) 2003-06-25
AU2002351774A1 (en) 2003-07-09
WO2003054888A2 (en) 2003-07-03
TW200301487A (en) 2003-07-01
WO2003054888A3 (en) 2004-01-29

Similar Documents

Publication Publication Date Title
IL152465A0 (en) Method for erasing a memory cell
GB2384883B (en) Non-volatile memory control
AU2003277017A8 (en) Non-volatile memory device and method for forming
IL154205A0 (en) Method for operating a memory device
EP1554732B8 (en) Highly compact non-volatile memory and method thereof
IL147658A0 (en) An eeprom array and method for operation thereof
AU2003221003A1 (en) Non-volatile memory and manufacturing method thereof
AU2002366471A1 (en) Non-volatile memory
AU2002354082A1 (en) Nonvolatile memory
AU2002348433A8 (en) Atomic transactions on a non-volatile memory
GB2396711B (en) A memory controller
HK1053129A1 (en) A method for treating allergies
GB0208302D0 (en) Mulitilevel memory access method
GB2368983B (en) Non-volatile memory device
AU2002361667A8 (en) Non-volatile memory and method of forming thereof
GB0102743D0 (en) A data switch and a method for controlling the data switch
GB0011438D0 (en) Memory aid
EP1329896A4 (en) Semiconductor memory and control method
EP1420345A4 (en) Non-volatile storage device and control method thereof
HK1054275A1 (en) A memory device
GB2383455B (en) Non-volatile memory and method for operating a non-volatile memory
EP1575056A4 (en) Non-volatile memory and write method thereof
AU2003295532A8 (en) Method and apparatus for operating a blocked secure storage memory
EP1276494A4 (en) A memory enhancing protein
GB2361783B (en) Non-volatile storage method

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase