AU2002221937A1 - Device and method for supplying a cvd reactor with a liquid starting material entering into a gaseous phase - Google Patents
Device and method for supplying a cvd reactor with a liquid starting material entering into a gaseous phaseInfo
- Publication number
- AU2002221937A1 AU2002221937A1 AU2002221937A AU2193702A AU2002221937A1 AU 2002221937 A1 AU2002221937 A1 AU 2002221937A1 AU 2002221937 A AU2002221937 A AU 2002221937A AU 2193702 A AU2193702 A AU 2193702A AU 2002221937 A1 AU2002221937 A1 AU 2002221937A1
- Authority
- AU
- Australia
- Prior art keywords
- supplying
- starting material
- gaseous phase
- material entering
- cvd reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45576—Coaxial inlets for each gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S261/00—Gas and liquid contact apparatus
- Y10S261/65—Vaporizers
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10057491 | 2000-11-20 | ||
DE10057491A DE10057491A1 (en) | 2000-11-20 | 2000-11-20 | Process for introducing a liquid starting material brought into gas form into a chemical vapour deposition (CVD) reactor comprises forming an aerosol, vaporizing the heat supply and removing the heat of vaporization |
PCT/EP2001/014302 WO2002040739A1 (en) | 2000-11-20 | 2001-10-27 | Device and method for supplying a cvd reactor with a liquid starting material entering into a gaseous phase |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002221937A1 true AU2002221937A1 (en) | 2002-05-27 |
Family
ID=7663950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002221937A Abandoned AU2002221937A1 (en) | 2000-11-20 | 2001-10-27 | Device and method for supplying a cvd reactor with a liquid starting material entering into a gaseous phase |
Country Status (8)
Country | Link |
---|---|
US (1) | US20040013800A1 (en) |
EP (1) | EP1364076B1 (en) |
JP (1) | JP2004514063A (en) |
KR (1) | KR100892810B1 (en) |
AU (1) | AU2002221937A1 (en) |
DE (2) | DE10057491A1 (en) |
TW (1) | TW583335B (en) |
WO (1) | WO2002040739A1 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060079201A (en) * | 2003-09-17 | 2006-07-05 | 아익스트론 아게 | Method and device for depositing layers using non-continuous injection |
DE102004021578A1 (en) | 2003-09-17 | 2005-04-21 | Aixtron Ag | Method and apparatus for depositing mono- or multi-component layers and layer sequences using non-continuous injection of liquid and dissolved starting substances via a multi-channel injection unit |
WO2006005637A1 (en) * | 2004-07-15 | 2006-01-19 | Aixtron Ag | Method for the deposition of layers containing silicon and germanium |
JP4607474B2 (en) * | 2004-02-12 | 2011-01-05 | 東京エレクトロン株式会社 | Deposition equipment |
DE102004015174A1 (en) | 2004-03-27 | 2005-10-13 | Aixtron Ag | Process for separating in particular metal oxides by means of non-continuous precursor injection |
US7622005B2 (en) | 2004-05-26 | 2009-11-24 | Applied Materials, Inc. | Uniformity control for low flow process and chamber to chamber matching |
US7572337B2 (en) | 2004-05-26 | 2009-08-11 | Applied Materials, Inc. | Blocker plate bypass to distribute gases in a chemical vapor deposition system |
DE102004056170A1 (en) * | 2004-08-06 | 2006-03-16 | Aixtron Ag | Apparatus and method for high throughput chemical vapor deposition |
JP4299286B2 (en) | 2005-10-06 | 2009-07-22 | 東京エレクトロン株式会社 | Vaporization apparatus, film forming apparatus, and vaporization method |
DE102006026576A1 (en) * | 2006-06-06 | 2008-01-10 | Aixtron Ag | Apparatus and method for evaporating a powdery organic starting material |
DE102006027932A1 (en) | 2006-06-14 | 2007-12-20 | Aixtron Ag | Method for the deposition of layers in a process chamber used in the production of electronic components comprises using a first starting material containing two beta-diketones and a diene coordinated with a ruthenium atom |
DE102011051260A1 (en) | 2011-06-22 | 2012-12-27 | Aixtron Se | Method and device for depositing OLEDs |
EP2788704B1 (en) | 2011-12-09 | 2019-03-06 | Applied Materials, Inc. | Heat exchanger for cooling a heating tube and method thereof |
TWI473903B (en) | 2013-02-23 | 2015-02-21 | Hermes Epitek Corp | Gas Injector and Cover Plate Assembly for Semiconductor Equipment |
US11459654B2 (en) * | 2020-11-19 | 2022-10-04 | Eugenus, Inc. | Liquid precursor injection for thin film deposition |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US548926A (en) * | 1895-10-29 | Wheel-tire | ||
US2874000A (en) * | 1957-03-13 | 1959-02-17 | Bosch Arma Corp | Fuel injection nozzles |
US3069099A (en) * | 1960-04-05 | 1962-12-18 | George C Graham | Fuel injection nozzle and spray device |
US3444886A (en) * | 1966-05-16 | 1969-05-20 | Caterpillar Tractor Co | Fuel injection valve |
US4350301A (en) * | 1980-06-25 | 1982-09-21 | The Bendix Corporation | Flow controlled pressure regulating device |
US4846217A (en) * | 1986-02-27 | 1989-07-11 | Massachusetts Institute Of Technology | Injection valve |
US4875658A (en) * | 1986-10-08 | 1989-10-24 | Mitsubishi Jidosha Kogyo Kabushiki Kaisha | Electromagnetic valve |
US4836453A (en) * | 1988-02-22 | 1989-06-06 | Outboard Marine Corporation | Fuel injector with continuous air flow |
DE3914636A1 (en) * | 1989-05-03 | 1990-11-08 | Bosch Gmbh Robert | DEVICE FOR COMBINED BLOWING OUT OF FUEL AND AIR FOR FUEL INJECTION SYSTEMS FROM INTERNAL COMBUSTION ENGINES |
JPH06291040A (en) * | 1992-03-03 | 1994-10-18 | Rintetsuku:Kk | Method and apparatus for vaporizing and supplying liquid |
FR2707671B1 (en) * | 1993-07-12 | 1995-09-15 | Centre Nat Rech Scient | Method and device for introducing precursors into a chemical vapor deposition chamber. |
US5451260A (en) * | 1994-04-15 | 1995-09-19 | Cornell Research Foundation, Inc. | Method and apparatus for CVD using liquid delivery system with an ultrasonic nozzle |
US6244575B1 (en) * | 1996-10-02 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus for vaporizing liquid precursors and system for using same |
US5835678A (en) * | 1996-10-03 | 1998-11-10 | Emcore Corporation | Liquid vaporizer system and method |
US5887117A (en) * | 1997-01-02 | 1999-03-23 | Sharp Kabushiki Kaisha | Flash evaporator |
JPH1112741A (en) * | 1997-06-24 | 1999-01-19 | Nissin Electric Co Ltd | Vaporization device of liquid raw material |
US6045864A (en) * | 1997-12-01 | 2000-04-04 | 3M Innovative Properties Company | Vapor coating method |
US6261374B1 (en) * | 1998-09-29 | 2001-07-17 | Applied Materials, Inc. | Clog resistant gas delivery system |
US6176930B1 (en) * | 1999-03-04 | 2001-01-23 | Applied Materials, Inc. | Apparatus and method for controlling a flow of process material to a deposition chamber |
JP3823591B2 (en) * | 1999-03-25 | 2006-09-20 | 三菱電機株式会社 | Vaporizing apparatus for CVD raw material and CVD apparatus using the same |
JP2000345345A (en) * | 1999-06-04 | 2000-12-12 | Mitsubishi Electric Corp | Cvd device and vaporizer for cvd device |
-
2000
- 2000-11-20 DE DE10057491A patent/DE10057491A1/en not_active Withdrawn
-
2001
- 2001-10-27 JP JP2002543047A patent/JP2004514063A/en active Pending
- 2001-10-27 WO PCT/EP2001/014302 patent/WO2002040739A1/en active IP Right Grant
- 2001-10-27 DE DE50112275T patent/DE50112275D1/en not_active Expired - Lifetime
- 2001-10-27 EP EP01996637A patent/EP1364076B1/en not_active Expired - Lifetime
- 2001-10-27 AU AU2002221937A patent/AU2002221937A1/en not_active Abandoned
- 2001-10-27 KR KR1020027009370A patent/KR100892810B1/en active IP Right Grant
- 2001-11-19 TW TW090128598A patent/TW583335B/en not_active IP Right Cessation
-
2003
- 2003-05-20 US US10/442,215 patent/US20040013800A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1364076B1 (en) | 2007-03-28 |
JP2004514063A (en) | 2004-05-13 |
DE50112275D1 (en) | 2007-05-10 |
US20040013800A1 (en) | 2004-01-22 |
KR20020084095A (en) | 2002-11-04 |
DE10057491A1 (en) | 2002-05-23 |
KR100892810B1 (en) | 2009-04-10 |
WO2002040739A1 (en) | 2002-05-23 |
EP1364076A1 (en) | 2003-11-26 |
TW583335B (en) | 2004-04-11 |
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