AU2002218398A1 - (ga,in)(n,as) laser structures using distributed feedback - Google Patents

(ga,in)(n,as) laser structures using distributed feedback

Info

Publication number
AU2002218398A1
AU2002218398A1 AU2002218398A AU1839802A AU2002218398A1 AU 2002218398 A1 AU2002218398 A1 AU 2002218398A1 AU 2002218398 A AU2002218398 A AU 2002218398A AU 1839802 A AU1839802 A AU 1839802A AU 2002218398 A1 AU2002218398 A1 AU 2002218398A1
Authority
AU
Australia
Prior art keywords
distributed feedback
laser structures
laser
structures
feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002218398A
Inventor
Martin David Dawson
Alistair Henderson Kean
Anthony Edward Kelly
Craig Tombling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kamelian Ltd
Original Assignee
Kamelian Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kamelian Ltd filed Critical Kamelian Ltd
Publication of AU2002218398A1 publication Critical patent/AU2002218398A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
AU2002218398A 2000-11-28 2001-11-22 (ga,in)(n,as) laser structures using distributed feedback Abandoned AU2002218398A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0028950.4 2000-11-28
GB0028950A GB2369492A (en) 2000-11-28 2000-11-28 (Ga,In)(N,As) Laser structures using distributed feedback
PCT/GB2001/005157 WO2002045221A2 (en) 2000-11-28 2001-11-22 (ga,in)(n,as) laser structures using distributed feedback

Publications (1)

Publication Number Publication Date
AU2002218398A1 true AU2002218398A1 (en) 2002-06-11

Family

ID=9904001

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002218398A Abandoned AU2002218398A1 (en) 2000-11-28 2001-11-22 (ga,in)(n,as) laser structures using distributed feedback

Country Status (4)

Country Link
US (1) US20020080844A1 (en)
AU (1) AU2002218398A1 (en)
GB (1) GB2369492A (en)
WO (1) WO2002045221A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG99970A1 (en) 2002-04-05 2003-11-27 Inst Materials Research & Eng Method for forming a modified semiconductor having a plurality of band gaps
SG139547A1 (en) * 2004-08-04 2008-02-29 Agency Science Tech & Res Distributed feedback and distributed bragg reflector semiconductor lasers
CN105429003B (en) * 2015-11-26 2019-08-13 深圳瑞波光电子有限公司 A kind of epitaxial structure and its optical grating construction preparation method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0283992A (en) * 1988-09-20 1990-03-26 Nec Corp Distributed feedback type semiconductor laser and distributed reflection type semiconductor laser
EP0402907A3 (en) * 1989-06-14 1991-09-25 Hitachi, Ltd. Semiconductor laser device
JPH03126015A (en) * 1989-10-12 1991-05-29 Canon Inc Waveguide type wavelength variable filter
JPH05175586A (en) * 1991-12-24 1993-07-13 Fujitsu Ltd Semiconductor wavelength variable element
JPH07326820A (en) * 1994-05-30 1995-12-12 Mitsubishi Electric Corp Variable wavelength semiconductor laser device
US5548607A (en) * 1994-06-08 1996-08-20 Lucent Technologies, Inc. Article comprising an integrated laser/modulator combination
FR2738678B1 (en) * 1995-09-08 1997-10-17 France Telecom SEMICONDUCTOR EMISSION DEVICE WITH FAST WAVELENGTH MODULATION
JPH11243256A (en) * 1997-12-03 1999-09-07 Canon Inc Distributed feedback type semiconductor laser and driving thereof

Also Published As

Publication number Publication date
US20020080844A1 (en) 2002-06-27
WO2002045221A2 (en) 2002-06-06
WO2002045221A3 (en) 2003-10-23
GB0028950D0 (en) 2001-01-10
GB2369492A (en) 2002-05-29

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