AU2002215225A1 - Method for manufacturing objective film, objective film obtained by the method, and laminated structure - Google Patents
Method for manufacturing objective film, objective film obtained by the method, and laminated structureInfo
- Publication number
- AU2002215225A1 AU2002215225A1 AU2002215225A AU1522502A AU2002215225A1 AU 2002215225 A1 AU2002215225 A1 AU 2002215225A1 AU 2002215225 A AU2002215225 A AU 2002215225A AU 1522502 A AU1522502 A AU 1522502A AU 2002215225 A1 AU2002215225 A1 AU 2002215225A1
- Authority
- AU
- Australia
- Prior art keywords
- objective film
- laminated structure
- manufacturing
- film obtained
- objective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000353112 | 2000-11-20 | ||
JP2000-353112 | 2000-11-20 | ||
JP2001230240 | 2001-07-30 | ||
JP2001-230240 | 2001-07-30 | ||
PCT/JP2001/010111 WO2002040751A1 (en) | 2000-11-20 | 2001-11-20 | Method for manufacturing objective film, objective film obtained by the method, and laminated structure |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002215225A1 true AU2002215225A1 (en) | 2002-05-27 |
Family
ID=26604295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002215225A Abandoned AU2002215225A1 (en) | 2000-11-20 | 2001-11-20 | Method for manufacturing objective film, objective film obtained by the method, and laminated structure |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2002040751A1 (en) |
AU (1) | AU2002215225A1 (en) |
WO (1) | WO2002040751A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100799144B1 (en) | 2004-01-15 | 2008-01-29 | 스구루 노다 | Process for producing monocrystal thin film and monocrystal thin film device |
EP2256786A1 (en) | 2004-01-15 | 2010-12-01 | Japan Science and Technology Agency | Process for producing monocrystal thin film and monocrystal thin film device |
KR101001912B1 (en) | 2008-10-17 | 2010-12-17 | 경북대학교 산학협력단 | single crystal thin film of using metal silicide seed layer, and manufacturing method thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3360919B2 (en) * | 1993-06-11 | 2003-01-07 | 三菱電機株式会社 | Method of manufacturing thin-film solar cell and thin-film solar cell |
JP2000150379A (en) * | 1998-11-09 | 2000-05-30 | Toyota Central Res & Dev Lab Inc | Manufacture of stack having crystalline semiconductor layer |
-
2001
- 2001-11-20 WO PCT/JP2001/010111 patent/WO2002040751A1/en active Application Filing
- 2001-11-20 AU AU2002215225A patent/AU2002215225A1/en not_active Abandoned
- 2001-11-20 JP JP2002543058A patent/JPWO2002040751A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPWO2002040751A1 (en) | 2004-03-25 |
WO2002040751A1 (en) | 2002-05-23 |
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