AU2001292580A1 - Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium - Google Patents
Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a mediumInfo
- Publication number
- AU2001292580A1 AU2001292580A1 AU2001292580A AU9258001A AU2001292580A1 AU 2001292580 A1 AU2001292580 A1 AU 2001292580A1 AU 2001292580 A AU2001292580 A AU 2001292580A AU 9258001 A AU9258001 A AU 9258001A AU 2001292580 A1 AU2001292580 A1 AU 2001292580A1
- Authority
- AU
- Australia
- Prior art keywords
- shockwaves
- medium
- applying controlled
- thermal spikes
- controlled succession
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/081—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing particle radiation or gamma-radiation
- B01J19/085—Electron beams only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
- C03C25/70—Cleaning, e.g. for reuse
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/145—Radiation by charged particles, e.g. electron beams or ion irradiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/670,028 US6730370B1 (en) | 2000-09-26 | 2000-09-26 | Method and apparatus for processing materials by applying a controlled succession of thermal spikes or shockwaves through a growth medium |
US09670028 | 2000-09-26 | ||
PCT/US2001/027729 WO2002026400A1 (en) | 2000-09-26 | 2001-09-24 | Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001292580A1 true AU2001292580A1 (en) | 2002-04-08 |
Family
ID=24688678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001292580A Abandoned AU2001292580A1 (en) | 2000-09-26 | 2001-09-24 | Method and apparatus for applying controlled succession of thermal spikes or shockwaves through a medium |
Country Status (5)
Country | Link |
---|---|
US (2) | US6730370B1 (en) |
EP (1) | EP1345704A4 (en) |
JP (1) | JP2004509747A (en) |
AU (1) | AU2001292580A1 (en) |
WO (1) | WO2002026400A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6593666B1 (en) * | 2001-06-20 | 2003-07-15 | Ambient Systems, Inc. | Energy conversion systems using nanometer scale assemblies and methods for using same |
US7095645B2 (en) * | 2003-06-02 | 2006-08-22 | Ambient Systems, Inc. | Nanoelectromechanical memory cells and data storage devices |
US7148579B2 (en) | 2003-06-02 | 2006-12-12 | Ambient Systems, Inc. | Energy conversion systems utilizing parallel array of automatic switches and generators |
US7199498B2 (en) * | 2003-06-02 | 2007-04-03 | Ambient Systems, Inc. | Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same |
US20040238907A1 (en) * | 2003-06-02 | 2004-12-02 | Pinkerton Joseph F. | Nanoelectromechanical transistors and switch systems |
KR100743679B1 (en) * | 2004-05-20 | 2007-07-30 | 한국과학기술원 | Method and apparatus for manufacturing carbon nano tube |
WO2007024204A2 (en) | 2004-07-19 | 2007-03-01 | Ambient Systems, Inc. | Nanometer-scale electrostatic and electromagnetic motors and generators |
US20060275537A1 (en) * | 2005-06-02 | 2006-12-07 | The Regents Of The University Of California | Method and apparatus for field-emission high-pressure-discharge laser chemical vapor deposition of free-standing structures |
EP1910217A2 (en) * | 2005-07-19 | 2008-04-16 | PINKERTON, Joseph P. | Heat activated nanometer-scale pump |
US8385113B2 (en) | 2007-04-03 | 2013-02-26 | Cjp Ip Holdings, Ltd. | Nanoelectromechanical systems and methods for making the same |
US8314357B2 (en) * | 2009-05-08 | 2012-11-20 | Children's Hospital And Research Center At Oakland | Joule heated nanowire biosensors |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3663788A (en) | 1966-06-11 | 1972-05-16 | Inoue K | Kinetic deposition of particles |
US4131524A (en) | 1969-11-24 | 1978-12-26 | U.S. Philips Corporation | Manufacture of semiconductor devices |
US3713213A (en) | 1970-01-29 | 1973-01-30 | Western Electric Co | Explosive bonding of workpieces |
US3727296A (en) | 1970-01-29 | 1973-04-17 | B Cranston | Explosive bonding of workpieces |
US3628184A (en) | 1970-03-02 | 1971-12-14 | Ibm | Superconducting oscillators and method for making the same |
US3720598A (en) | 1970-12-31 | 1973-03-13 | Ibm | Cryogenic arc furnace and method of forming materials |
CH643397A5 (en) | 1979-09-20 | 1984-05-30 | Ibm | GRID TUNNEL MICROSCOPE. |
US4520252A (en) | 1981-07-07 | 1985-05-28 | Inoue-Japax Research Incorporated | Traveling-wire EDM method and apparatus with a cooled machining fluid |
US4566937A (en) | 1984-10-10 | 1986-01-28 | The United States Of America As Represented By The United States Department Of Energy | Electron beam enhanced surface modification for making highly resolved structures |
US4731515A (en) | 1986-10-22 | 1988-03-15 | Systems Research Laboratories, Inc. | Method of making powders by electro-discharge machining in a cryogenic dielectric |
EP0318037A3 (en) * | 1987-11-27 | 1990-07-25 | Sony Corporation | Method for forming a fine pattern by using a patterned resist layer |
NL8802335A (en) | 1988-09-21 | 1990-04-17 | Philips Nv | METHOD AND APPARATUS FOR PROCESSING A MATERIAL SURFACE ON SUB-MIKRON SCALE |
US4994140A (en) * | 1989-01-10 | 1991-02-19 | Optoelectronics Technology Research Corporation | Method capable of forming a fine pattern without crystal defects |
US4896044A (en) | 1989-02-17 | 1990-01-23 | Purdue Research Foundation | Scanning tunneling microscope nanoetching method |
US5015323A (en) * | 1989-10-10 | 1991-05-14 | The United States Of America As Represented By The Secretary Of Commerce | Multi-tipped field-emission tool for nanostructure fabrication |
US5837332A (en) | 1989-11-19 | 1998-11-17 | Nihon Victor Kabushiki-Kaisha | Method and apparatus for preparing crystal thin films by using a surface acoustic wave |
US5043578A (en) | 1990-04-05 | 1991-08-27 | International Business Machines Corporation | Writing atomic scale features with fine tip as source of deposited atoms |
US5047649A (en) | 1990-10-09 | 1991-09-10 | International Business Machines Corporation | Method and apparatus for writing or etching narrow linewidth patterns on insulating materials |
US5352330A (en) | 1992-09-30 | 1994-10-04 | Texas Instruments Incorporated | Process for producing nanometer-size structures on surfaces using electron beam induced chemistry through electron stimulated desorption |
JP3212755B2 (en) | 1993-05-19 | 2001-09-25 | 株式会社東芝 | Method for producing needle-like substance and method for producing micro-emitter array |
US6063243A (en) * | 1995-02-14 | 2000-05-16 | The Regents Of The Univeristy Of California | Method for making nanotubes and nanoparticles |
US5728261A (en) | 1995-05-26 | 1998-03-17 | University Of Houston | Magnetically enhanced radio frequency reactive ion etching method and apparatus |
US5534311A (en) | 1995-05-31 | 1996-07-09 | The United States Of America As Represented By The Secretary Of The Navy | Production of structures by electrostatically-focused deposition |
US5648128A (en) | 1996-06-06 | 1997-07-15 | National Science Council | Method for enhancing the growth rate of a silicon dioxide layer grown by liquid phase deposition |
US6001426A (en) | 1996-07-25 | 1999-12-14 | Utron Inc. | High velocity pulsed wire-arc spray |
US5753088A (en) * | 1997-02-18 | 1998-05-19 | General Motors Corporation | Method for making carbon nanotubes |
CA2256847A1 (en) | 1998-12-22 | 2000-06-22 | Munther Kandah | Particle-free cathodic arc carbon ion source |
-
2000
- 2000-09-26 US US09/670,028 patent/US6730370B1/en not_active Expired - Fee Related
-
2001
- 2001-09-24 EP EP01972949A patent/EP1345704A4/en not_active Withdrawn
- 2001-09-24 WO PCT/US2001/027729 patent/WO2002026400A1/en active Application Filing
- 2001-09-24 JP JP2002530221A patent/JP2004509747A/en active Pending
- 2001-09-24 AU AU2001292580A patent/AU2001292580A1/en not_active Abandoned
-
2004
- 2004-05-04 US US10/837,590 patent/US20040221812A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2002026400A1 (en) | 2002-04-04 |
US6730370B1 (en) | 2004-05-04 |
WO2002026400A8 (en) | 2002-06-20 |
US20040221812A1 (en) | 2004-11-11 |
EP1345704A4 (en) | 2006-03-15 |
EP1345704A1 (en) | 2003-09-24 |
JP2004509747A (en) | 2004-04-02 |
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