AU2001281721A1 - Capacitor comprising a dielectric ceramic layer containing silver, niobium and tantalum - Google Patents

Capacitor comprising a dielectric ceramic layer containing silver, niobium and tantalum

Info

Publication number
AU2001281721A1
AU2001281721A1 AU2001281721A AU8172101A AU2001281721A1 AU 2001281721 A1 AU2001281721 A1 AU 2001281721A1 AU 2001281721 A AU2001281721 A AU 2001281721A AU 8172101 A AU8172101 A AU 8172101A AU 2001281721 A1 AU2001281721 A1 AU 2001281721A1
Authority
AU
Australia
Prior art keywords
niobium
tantalum
sub
capacitor
layer containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001281721A
Inventor
Christian Hoffmann
Helmut Sommariva
Danilo Suvorov
Matjaz Valant
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2000142359 external-priority patent/DE10042359B4/en
Application filed by Epcos AG filed Critical Epcos AG
Publication of AU2001281721A1 publication Critical patent/AU2001281721A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1254—Ceramic dielectrics characterised by the ceramic dielectric material based on niobium or tungsteen, tantalum oxides or niobates, tantalates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Capacitors (AREA)

Abstract

A capacitor includes at least two pairs of opposing electrode layers and an intermediate dielectric layer. The intermediate dielectric layer includes a ceramic material that contains at least two different components existing in separate phases. The at least two different components have a perovskite structure that contains silver in A-positions and niobium and tantalum in B-positions. A composition of a first component and a composition of a second component are such that temperature coefficients of respective permittivities Tkepsilon<SUB>A </SUB>and Tkepsilon<SUB>B </SUB>have different signs within a temperature range.
AU2001281721A 2000-08-29 2001-08-03 Capacitor comprising a dielectric ceramic layer containing silver, niobium and tantalum Abandoned AU2001281721A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10042359 2000-08-29
DE2000142359 DE10042359B4 (en) 2000-08-29 2000-08-29 Capacitor comprises two or more electrode layers lying opposite each other with dielectric layers made of a ceramic material containing different components between them
PCT/DE2001/002971 WO2002019355A1 (en) 2000-08-29 2001-08-03 Capacitor comprising a dielectric ceramic layer containing silver, niobium and tantalum

Publications (1)

Publication Number Publication Date
AU2001281721A1 true AU2001281721A1 (en) 2002-03-13

Family

ID=7654144

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001281721A Abandoned AU2001281721A1 (en) 2000-08-29 2001-08-03 Capacitor comprising a dielectric ceramic layer containing silver, niobium and tantalum

Country Status (8)

Country Link
US (1) US7224573B2 (en)
EP (1) EP1314173B1 (en)
JP (1) JP2004508704A (en)
AT (1) ATE324661T1 (en)
AU (1) AU2001281721A1 (en)
DE (1) DE50109636D1 (en)
TW (1) TW535177B (en)
WO (1) WO2002019355A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10145363A1 (en) * 2001-09-14 2003-04-10 Epcos Ag Process for producing a ceramic substrate and ceramic substrate
US7428137B2 (en) * 2004-12-03 2008-09-23 Dowgiallo Jr Edward J High performance capacitor with high dielectric constant material
JP2006236908A (en) * 2005-02-28 2006-09-07 Tdk Corp Composite dielectric material, prepreg using it, metallic foil-coated product, mold body, composite dielectric board and multilayer board
US8072460B2 (en) * 2007-10-17 2011-12-06 Nvidia Corporation System, method, and computer program product for generating a ray tracing data structure utilizing a parallel processor architecture
WO2020004670A1 (en) * 2018-06-29 2020-01-02 国立大学法人 東京大学 Dielectric material exhibiting polarization twist, dielectric structure in which polarization can be controlled and capacitor and piezoelectric element each using same, and ceramic and capacitor and piezoelectric element each using same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283752A (en) 1978-05-01 1981-08-11 Corning Glass Works Ternary niobate dielectric compositions
US4640905A (en) 1985-05-01 1987-02-03 E. I. Du Pont De Nemours And Company Dielectric compositions
JPH0648666B2 (en) 1987-09-29 1994-06-22 三菱マテリアル株式会社 Multilayer ceramic capacitor and manufacturing method thereof
JP2518703B2 (en) 1989-11-02 1996-07-31 堺化学工業株式会社 Laminated composite piezoelectric body and manufacturing method thereof
US5434742A (en) * 1991-12-25 1995-07-18 Hitachi, Ltd. Capacitor for semiconductor integrated circuit and method of manufacturing the same
JP2901493B2 (en) * 1994-06-27 1999-06-07 日本電気株式会社 Semiconductor memory device and method of manufacturing the same
SI9600232A (en) 1996-07-19 1998-02-28 Inštitut JOŽEF STEFAN Microwave dielectric ceramics based upon oxides of silver, nobium and tantalum
DE19653792A1 (en) 1996-12-21 1998-06-25 Philips Patentverwaltung Flat temperature characteristic component, especially capacitor
DE19722618A1 (en) 1997-05-30 1998-12-03 Philips Patentverwaltung High temperature condenser
JP2000044339A (en) 1998-07-30 2000-02-15 Kyocera Corp Dielectric ceramic composition and multilayer ceramic capacitor produced by using the composition
US6878980B2 (en) * 2001-11-23 2005-04-12 Hans Gude Gudesen Ferroelectric or electret memory circuit

Also Published As

Publication number Publication date
EP1314173B1 (en) 2006-04-26
TW535177B (en) 2003-06-01
JP2004508704A (en) 2004-03-18
EP1314173A1 (en) 2003-05-28
DE50109636D1 (en) 2006-06-01
ATE324661T1 (en) 2006-05-15
US7224573B2 (en) 2007-05-29
WO2002019355A1 (en) 2002-03-07
US20060034034A1 (en) 2006-02-16

Similar Documents

Publication Publication Date Title
WO2002101767A3 (en) High voltage, high temperature capacitor structures and methods of fabricating same
WO2005059930A3 (en) Printed circuit embedded capacitors
EP1408537A3 (en) Multi-layer film capacitor structures and method
IL161634A (en) Thin film capacitor using conductive polymers
KR970067417A (en) Dielectric ceramics and monolithic ceramic electronic components using them
UA41477C2 (en) Multilayer capacitor with thin-layer structure and method of its production
WO2002056669A3 (en) Thin film dielectric composite materials
WO2001045120A3 (en) Variable capacitor and associated fabrication method
WO2002049405A3 (en) Multi-layer circuits and methods of manufacture thereof
WO2002045145A3 (en) Uv-free curing of organic dielectrica
TW200620347A (en) Multilayer ceramic capacitor
WO1999018587A3 (en) Ceramic multilayer capacitor
DE60107834D1 (en) CACU3TI4O12 CONTAINING, TUNABLE ELECTRICAL EQUIPMENT
CA2345764A1 (en) Capacitance-coupled high dielectric constant embedded capacitors
CA2360789A1 (en) Niobium capacitor and method of manufacture thereof
TW200710893A (en) Multilayer capacitor
MY129379A (en) Layered polymer on aluminum stacked capacitor
AU2001281721A1 (en) Capacitor comprising a dielectric ceramic layer containing silver, niobium and tantalum
WO2004042804A3 (en) Capacitor fabrication methods and capacitor structures including niobium oxide
EP1003216A3 (en) Multilayered ceramic structure
DE50209370D1 (en) ELECTRIC MULTILAYER ELEMENT
KR970060571A (en) Thin film multilayer electrodes, high frequency resonators and high frequency transmission lines
CA2396271A1 (en) A capacitor element for a power capacitor, a power capacitor comprising such element and a metallized film for a power capacitor
WO2002071482A8 (en) Hollow structure in an integrated circuit and method for producing such a hollow structure in an integrated circuit
TW362227B (en) Ceramic multilayer capacitor