AU2001264271A1 - Resist composition - Google Patents

Resist composition

Info

Publication number
AU2001264271A1
AU2001264271A1 AU2001264271A AU6427101A AU2001264271A1 AU 2001264271 A1 AU2001264271 A1 AU 2001264271A1 AU 2001264271 A AU2001264271 A AU 2001264271A AU 6427101 A AU6427101 A AU 6427101A AU 2001264271 A1 AU2001264271 A1 AU 2001264271A1
Authority
AU
Australia
Prior art keywords
resist composition
monomer
acid
monomer units
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001264271A
Inventor
Isamu Kaneko
Yasuhide Kawaguchi
Syun-Ichi Kodama
Shinji Okada
Yoko Takebe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of AU2001264271A1 publication Critical patent/AU2001264271A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L29/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical; Compositions of hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Compositions of derivatives of such polymers
    • C08L29/14—Homopolymers or copolymers of acetals or ketals obtained by polymerisation of unsaturated acetals or ketals or by after-treatment of polymers of unsaturated alcohols
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)

Abstract

The following resist composition of chemical amplification type, which is excellent in transparency to light beams and dry etching properties and gives a resist pattern excellent in sensitivity, resolution, evenness, heat resistance, etc. A resist composition which comprises a fluoropolymer (A) comprising monomer units (a) of a fluorovinyl monomer having -CF2-OR (wherein R is a C1-10 alkyl group) and monomer units (b) of an alicyclic ethylenic monomer, an acid-generating compound (B) which generates an acid upon irradiation with light, and an organic solvent (C).
AU2001264271A 2000-06-13 2001-06-13 Resist composition Abandoned AU2001264271A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000176603 2000-06-13
JP2000-176603 2000-06-13
PCT/JP2001/005033 WO2001096963A1 (en) 2000-06-13 2001-06-13 Resist composition

Publications (1)

Publication Number Publication Date
AU2001264271A1 true AU2001264271A1 (en) 2001-12-24

Family

ID=18678313

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001264271A Abandoned AU2001264271A1 (en) 2000-06-13 2001-06-13 Resist composition

Country Status (7)

Country Link
US (1) US6733952B2 (en)
EP (1) EP1298491B1 (en)
KR (1) KR20030076226A (en)
AT (1) ATE289082T1 (en)
AU (1) AU2001264271A1 (en)
DE (1) DE60108874T2 (en)
WO (1) WO2001096963A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6833230B2 (en) * 2000-01-19 2004-12-21 Samsung Electronics Co., Ltd. Photosensitive polymers containing adamantylalkyl vinyl ether, and resist compositions including the same
JPWO2004018534A1 (en) * 2002-08-21 2005-12-08 旭硝子株式会社 Fluorine-containing compound, fluorine-containing polymer and production method thereof
AU2003277581A1 (en) * 2002-11-07 2004-06-07 Asahi Glass Company, Limited Resist composition
CN1711291A (en) * 2002-11-07 2005-12-21 旭硝子株式会社 Fluoropolymer
JP4396525B2 (en) * 2003-03-28 2010-01-13 旭硝子株式会社 Fluorine-containing compound and fluorine-containing polymer
EP1649322A4 (en) 2003-07-17 2007-09-19 Honeywell Int Inc Planarization films for advanced microelectronic applications and devices and methods of production thereof
JP2005097531A (en) * 2003-08-21 2005-04-14 Asahi Glass Co Ltd Fluorocopolymer, method of producing the same, and resist composition containing the same
FR2859110B1 (en) 2003-09-03 2006-04-07 Salomon Sa BACKGROUND SKI SYSTEM WITH DIRECT SUPPORT SIDE SURFACE
WO2005042453A1 (en) * 2003-10-31 2005-05-12 Asahi Glass Company, Limited Fluorine compound, fluoropolymer, and process for producing the same
WO2005108446A1 (en) * 2004-05-07 2005-11-17 Asahi Glass Company, Limited Fluorine-containing copolymer, method for producing same and resist composition containing same
WO2006011427A1 (en) 2004-07-30 2006-02-02 Asahi Glass Company, Limited Fluorine-containing compound, fluorine-containing polymer, resist composition and resist protective film composition
US20060249332A1 (en) * 2005-05-06 2006-11-09 General Electric Company Oil supply and scavenge system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US211417A (en) * 1879-01-14 Improvement in apparatus for cooling air
JP3915870B2 (en) * 1999-08-25 2007-05-16 信越化学工業株式会社 Polymer compound, chemically amplified resist material, and pattern forming method
JP3672780B2 (en) * 1999-11-29 2005-07-20 セントラル硝子株式会社 Positive resist composition and pattern forming method
US6951705B2 (en) * 2000-05-05 2005-10-04 E. I. Du Pont De Nemours And Company Polymers for photoresist compositions for microlithography

Also Published As

Publication number Publication date
US20030130409A1 (en) 2003-07-10
ATE289082T1 (en) 2005-02-15
EP1298491A1 (en) 2003-04-02
DE60108874T2 (en) 2005-12-29
EP1298491A4 (en) 2004-06-16
DE60108874D1 (en) 2005-03-17
WO2001096963A1 (en) 2001-12-20
KR20030076226A (en) 2003-09-26
EP1298491B1 (en) 2005-02-09
US6733952B2 (en) 2004-05-11

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