AU2001248719A1 - A self-pulsating laser diode and a method for causing a laser diode to output light pulses - Google Patents

A self-pulsating laser diode and a method for causing a laser diode to output light pulses

Info

Publication number
AU2001248719A1
AU2001248719A1 AU2001248719A AU4871901A AU2001248719A1 AU 2001248719 A1 AU2001248719 A1 AU 2001248719A1 AU 2001248719 A AU2001248719 A AU 2001248719A AU 4871901 A AU4871901 A AU 4871901A AU 2001248719 A1 AU2001248719 A1 AU 2001248719A1
Authority
AU
Australia
Prior art keywords
laser diode
self
causing
output light
light pulses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001248719A
Inventor
Pascal Michel Landais
Stephen Anthony Lynch
Paul Mcevoy
James Christopher O'gorman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin
Original Assignee
College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin filed Critical College of the Holy and Undivided Trinity of Queen Elizabeth near Dublin
Publication of AU2001248719A1 publication Critical patent/AU2001248719A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0658—Self-pulsating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AU2001248719A 2000-04-12 2001-04-12 A self-pulsating laser diode and a method for causing a laser diode to output light pulses Abandoned AU2001248719A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IE20000287 2000-04-12
IES2000/0287 2000-04-12
PCT/IE2001/000050 WO2001078205A1 (en) 2000-04-12 2001-04-12 A self-pulsating laser diode and a method for causing a laser diode to output light pulses

Publications (1)

Publication Number Publication Date
AU2001248719A1 true AU2001248719A1 (en) 2001-10-23

Family

ID=11042596

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001248719A Abandoned AU2001248719A1 (en) 2000-04-12 2001-04-12 A self-pulsating laser diode and a method for causing a laser diode to output light pulses

Country Status (4)

Country Link
US (1) US6804272B2 (en)
AU (1) AU2001248719A1 (en)
IE (1) IES20010362A2 (en)
WO (1) WO2001078205A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7352784B2 (en) * 2004-07-20 2008-04-01 Jds Uniphase Corporation Laser burst boosting method and apparatus
JP4530348B2 (en) * 2004-09-06 2010-08-25 大学共同利用機関法人自然科学研究機構 Passive Q-switched laser device
JP6224514B2 (en) * 2014-04-28 2017-11-01 ルネサスエレクトロニクス株式会社 Semiconductor device
US10554018B2 (en) * 2017-12-19 2020-02-04 International Business Machines Corporation Hybrid vertical current injection electro-optical device with refractive-index-matched current blocking layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61101089A (en) * 1984-10-24 1986-05-19 Hitachi Ltd Semiconductor laser device
US5416790A (en) 1992-11-06 1995-05-16 Sanyo Electric Co., Ltd. Semiconductor laser with a self-sustained pulsation
JPH07263798A (en) 1994-03-25 1995-10-13 Mitsubishi Electric Corp Semiconductor laser and its manufacture
JPH1075011A (en) * 1996-08-30 1998-03-17 Sony Corp Semiconductor laser
US5850411A (en) 1996-09-17 1998-12-15 Sdl, Inc Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation
JP3381534B2 (en) 1996-11-19 2003-03-04 ソニー株式会社 Self-oscillation type semiconductor laser

Also Published As

Publication number Publication date
IES20010362A2 (en) 2001-10-17
US6804272B2 (en) 2004-10-12
US20030185262A1 (en) 2003-10-02
WO2001078205A1 (en) 2001-10-18
WO2001078205A9 (en) 2002-11-28

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