AU2001235624A1 - Method for treating a diamond surface and corresponding diamond surface - Google Patents
Method for treating a diamond surface and corresponding diamond surfaceInfo
- Publication number
- AU2001235624A1 AU2001235624A1 AU2001235624A AU3562401A AU2001235624A1 AU 2001235624 A1 AU2001235624 A1 AU 2001235624A1 AU 2001235624 A AU2001235624 A AU 2001235624A AU 3562401 A AU3562401 A AU 3562401A AU 2001235624 A1 AU2001235624 A1 AU 2001235624A1
- Authority
- AU
- Australia
- Prior art keywords
- diamond surface
- ions
- treating
- diameter smaller
- cold cathodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910003460 diamond Inorganic materials 0.000 title abstract 5
- 239000010432 diamond Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 3
- 150000002500 ions Chemical class 0.000 abstract 3
- 238000004377 microelectronic Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/041—Making n- or p-doped regions
- H01L21/0415—Making n- or p-doped regions using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
- H01L21/0425—Making electrodes
- H01L21/043—Ohmic electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a treatment method of a diamond surface and to a corresponding diamond surface (5A).According to the method, ions are produced, each having at least three positive charges, and a beam of these ions is sent towards a diamond surface in order to make at least one zone of the surface conductive under the effect of said ions. Advantageously, conductive islands (6) are formed with a diameter smaller than 150 nm, then used preferably as one electron tank (diameter smaller than 10 nm) or as replenishment reservoirs for cold cathodes.Application to micro-electronics and to the production of cold cathodes.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0001604 | 2000-02-09 | ||
FR0001604A FR2804623B1 (en) | 2000-02-09 | 2000-02-09 | METHOD FOR TREATING A DIAMOND SURFACE AND CORRESPONDING DIAMOND SURFACE |
PCT/FR2001/000360 WO2001059817A1 (en) | 2000-02-09 | 2001-02-07 | Method for treating a diamond surface and corresponding diamond surface |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001235624A1 true AU2001235624A1 (en) | 2001-08-20 |
Family
ID=8846808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001235624A Abandoned AU2001235624A1 (en) | 2000-02-09 | 2001-02-07 | Method for treating a diamond surface and corresponding diamond surface |
Country Status (9)
Country | Link |
---|---|
US (1) | US6841249B2 (en) |
EP (1) | EP1258029B1 (en) |
JP (1) | JP2003522710A (en) |
AT (1) | ATE357737T1 (en) |
AU (1) | AU2001235624A1 (en) |
CA (1) | CA2399588A1 (en) |
DE (1) | DE60127383T2 (en) |
FR (1) | FR2804623B1 (en) |
WO (1) | WO2001059817A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6878403B2 (en) * | 2002-10-04 | 2005-04-12 | Guardian Industries Corp. | Method of ion beam treatment of DLC in order to reduce contact angle |
US6878405B2 (en) | 2002-10-04 | 2005-04-12 | Guardian Industries Corp. | Method of treating DLC on substrate with oxygen and/or hot water |
US7387816B2 (en) * | 2003-12-15 | 2008-06-17 | Guardian Industries Corp. | Scratch resistant coated glass article including layer(s) resistant to fluoride-based etchant(s), and method of making article using combustion CVD |
US7455883B2 (en) * | 2004-10-19 | 2008-11-25 | Guardian Industries Corp. | Hydrophilic DLC on substrate with flame pyrolysis treatment |
US20060246218A1 (en) * | 2005-04-29 | 2006-11-02 | Guardian Industries Corp. | Hydrophilic DLC on substrate with barrier discharge pyrolysis treatment |
FR2890231B1 (en) * | 2005-08-29 | 2009-10-09 | Jean Pierre Briand | METHOD FOR MANUFACTURING COLD CATHODES OPERATING AT LOW VOLTAGES BY IRRADIATION OF DLC THIN FILMS WITH MULTICHARGED IONS AND CORRESPONDING EMITTING SURFACES |
DE102006017153B3 (en) * | 2006-04-04 | 2007-08-30 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Surface structures producing method for molecular diagnostics in medicine, involves applying metallic coating on regions and depositing scavenger molecules on metallic coating of regions over bonding mechanism |
US20090124159A1 (en) * | 2007-03-02 | 2009-05-14 | Jean Pierre Briand | Method of fabrication of cold cathodes on thin diamondlike carbon films irradiated with multicharged ions and field emissive corresponding surfaces |
US8003164B2 (en) * | 2008-09-19 | 2011-08-23 | Guardian Industries Corp. | Method of making a scratch-and etch-resistant coated glass article |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5141460A (en) * | 1991-08-20 | 1992-08-25 | Jaskie James E | Method of making a field emission electron source employing a diamond coating |
US5399238A (en) * | 1991-11-07 | 1995-03-21 | Microelectronics And Computer Technology Corporation | Method of making field emission tips using physical vapor deposition of random nuclei as etch mask |
US5659224A (en) * | 1992-03-16 | 1997-08-19 | Microelectronics And Computer Technology Corporation | Cold cathode display device |
US5608283A (en) * | 1994-06-29 | 1997-03-04 | Candescent Technologies Corporation | Electron-emitting devices utilizing electron-emissive particles which typically contain carbon |
US5628659A (en) * | 1995-04-24 | 1997-05-13 | Microelectronics And Computer Corporation | Method of making a field emission electron source with random micro-tip structures |
US5713775A (en) * | 1995-05-02 | 1998-02-03 | Massachusetts Institute Of Technology | Field emitters of wide-bandgap materials and methods for their fabrication |
CN1103110C (en) * | 1995-08-04 | 2003-03-12 | 可印刷发射体有限公司 | Field electron emission materials and devices |
US5729094A (en) * | 1996-04-15 | 1998-03-17 | Massachusetts Institute Of Technology | Energetic-electron emitters |
FR2757881B1 (en) * | 1996-12-31 | 1999-04-09 | Univ Paris Curie | PROCESS FOR TREATING A SURFACE OF A SEMICONDUCTOR, CORRESPONDING DEVICE AND ASSOCIATED SEMICONDUCTOR |
GB9702348D0 (en) * | 1997-02-05 | 1997-03-26 | Smiths Industries Plc | Electron emitter devices |
FR2764110B1 (en) * | 1997-05-28 | 1999-08-20 | Univ Paris Curie | DEVICE AND METHOD FOR ION ETCHING |
-
2000
- 2000-02-09 FR FR0001604A patent/FR2804623B1/en not_active Expired - Fee Related
-
2001
- 2001-02-07 DE DE60127383T patent/DE60127383T2/en not_active Expired - Lifetime
- 2001-02-07 US US10/182,712 patent/US6841249B2/en not_active Expired - Fee Related
- 2001-02-07 EP EP01907726A patent/EP1258029B1/en not_active Expired - Lifetime
- 2001-02-07 AT AT01907726T patent/ATE357737T1/en not_active IP Right Cessation
- 2001-02-07 WO PCT/FR2001/000360 patent/WO2001059817A1/en active IP Right Grant
- 2001-02-07 JP JP2001559044A patent/JP2003522710A/en active Pending
- 2001-02-07 AU AU2001235624A patent/AU2001235624A1/en not_active Abandoned
- 2001-02-07 CA CA002399588A patent/CA2399588A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP2003522710A (en) | 2003-07-29 |
FR2804623A1 (en) | 2001-08-10 |
DE60127383D1 (en) | 2007-05-03 |
DE60127383T2 (en) | 2007-11-29 |
WO2001059817A1 (en) | 2001-08-16 |
US6841249B2 (en) | 2005-01-11 |
EP1258029B1 (en) | 2007-03-21 |
EP1258029A1 (en) | 2002-11-20 |
CA2399588A1 (en) | 2001-08-16 |
ATE357737T1 (en) | 2007-04-15 |
FR2804623B1 (en) | 2002-05-03 |
US20030118828A1 (en) | 2003-06-26 |
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