AU2001227109A1 - Method for preparing film of compound material containing gas forming element - Google Patents

Method for preparing film of compound material containing gas forming element

Info

Publication number
AU2001227109A1
AU2001227109A1 AU2001227109A AU2710901A AU2001227109A1 AU 2001227109 A1 AU2001227109 A1 AU 2001227109A1 AU 2001227109 A AU2001227109 A AU 2001227109A AU 2710901 A AU2710901 A AU 2710901A AU 2001227109 A1 AU2001227109 A1 AU 2001227109A1
Authority
AU
Australia
Prior art keywords
containing gas
material containing
forming element
compound material
gas forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001227109A
Inventor
Masahiro Furuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of AU2001227109A1 publication Critical patent/AU2001227109A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3457—Sputtering using other particles than noble gas ions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Optical Elements (AREA)
AU2001227109A 2000-01-27 2001-01-29 Method for preparing film of compound material containing gas forming element Abandoned AU2001227109A1 (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2000018145 2000-01-27
JP2000-18145 2000-01-27
JP2000019480 2000-01-28
JP2000-19480 2000-01-28
JP2000-83285 2000-03-21
JP2000083285 2000-03-21
JP2000362262 2000-11-29
JP2000-362262 2000-11-29
PCT/JP2001/000562 WO2001055477A1 (en) 2000-01-27 2001-01-29 Method for preparing film of compound material containing gas forming element

Publications (1)

Publication Number Publication Date
AU2001227109A1 true AU2001227109A1 (en) 2001-08-07

Family

ID=27480959

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001227109A Abandoned AU2001227109A1 (en) 2000-01-27 2001-01-29 Method for preparing film of compound material containing gas forming element

Country Status (4)

Country Link
US (1) US20020175070A1 (en)
EP (1) EP1260604A4 (en)
AU (1) AU2001227109A1 (en)
WO (1) WO2001055477A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0127251D0 (en) * 2001-11-13 2002-01-02 Nordiko Ltd Apparatus
US6811662B1 (en) * 2003-08-22 2004-11-02 Powership Semiconductor Corp. Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof
US20060181266A1 (en) * 2005-02-14 2006-08-17 Panelvision Technology, A California Corporation Flat panel display inspection system
WO2011117945A1 (en) * 2010-03-26 2011-09-29 キヤノンアネルバ株式会社 Sputtering device and manufacturing method for electronic device
KR101637938B1 (en) * 2014-11-06 2016-07-08 한국과학기술연구원 Method of fabricating cathode for thin film battery using laser, cathode fabricated thereby, and thin film battery including the same
CN114277342A (en) * 2020-09-28 2022-04-05 天津工业大学 Broadband high-transmittance single-layer MgF2Preparation method of antireflection film

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3630881A (en) * 1970-01-22 1971-12-28 Ibm Cathode-target assembly for rf sputtering apparatus
US3640812A (en) * 1970-09-02 1972-02-08 Rca Corp Method of making electrical contacts on the surface of a semiconductor device
CH558428A (en) * 1972-11-23 1975-01-31 Balzers Patent Beteilig Ag TARGET CHANGING DEVICE FOR SPRAYING BY ION.
JPS6082663A (en) * 1983-10-08 1985-05-10 Fujitsu Ltd Method and apparatus for manufacturing mixture thin film
JPS63192865A (en) * 1987-02-05 1988-08-10 Tokio Nakada Sputtering device
US5175140A (en) * 1987-03-19 1992-12-29 Sumitomo Electric Industries, Ltd. High Tc superconducting material
US4842705A (en) * 1987-06-04 1989-06-27 Siemens Aktiengesellschaft Method for manufacturing transparent conductive indium-tin oxide layers
JPH01240649A (en) * 1988-03-17 1989-09-26 Matsushita Electric Ind Co Ltd Production of thin film of superconductor
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JP2588985B2 (en) * 1990-03-09 1997-03-12 財団法人国際超電導産業技術研究センター Oxide thin film deposition method
US5225393A (en) * 1990-03-09 1993-07-06 International Superconductivity Technology Center Process for forming thin oxide film
KR930009690B1 (en) * 1991-03-05 1993-10-08 주식회사 에스.케이.씨 Manufacturing method of recording materials
US5126318A (en) * 1991-03-13 1992-06-30 Westinghouse Electric Corp. Sputtering method for forming superconductive films using water vapor addition
US5328583A (en) * 1991-11-05 1994-07-12 Canon Kabushiki Kaisha Sputtering apparatus and process for forming lamination film employing the apparatus
US5679125A (en) * 1994-07-07 1997-10-21 Nikon Corporation Method for producing silica glass for use with light in a vacuum ultraviolet wavelength range
JPH08220304A (en) * 1995-02-13 1996-08-30 Tadahiro Omi Optical product, exposure device or optical system using same, and production thereof
DE69729990T2 (en) * 1996-03-11 2004-12-09 Matsushita Electric Industrial Co., Ltd., Kadoma OPTICAL DATA RECORDING MEDIUM, METHOD FOR PRODUCING THE SAME AND METHOD FOR PLAYING BACK / DELETING A RECORD
JP3735461B2 (en) * 1998-03-27 2006-01-18 株式会社シンクロン Compound metal compound thin film forming method and thin film forming apparatus therefor
US6389929B1 (en) * 1999-05-20 2002-05-21 Sram Corporation Elongated rotatable handgrip
US6251242B1 (en) * 2000-01-21 2001-06-26 Applied Materials, Inc. Magnetron and target producing an extended plasma region in a sputter reactor

Also Published As

Publication number Publication date
EP1260604A1 (en) 2002-11-27
US20020175070A1 (en) 2002-11-28
EP1260604A4 (en) 2006-12-27
WO2001055477A1 (en) 2001-08-02

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