AU1925801A - Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics - Google Patents
Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronicsInfo
- Publication number
- AU1925801A AU1925801A AU19258/01A AU1925801A AU1925801A AU 1925801 A AU1925801 A AU 1925801A AU 19258/01 A AU19258/01 A AU 19258/01A AU 1925801 A AU1925801 A AU 1925801A AU 1925801 A AU1925801 A AU 1925801A
- Authority
- AU
- Australia
- Prior art keywords
- integrated circuit
- semiconductor processing
- abrasive slurry
- slurry method
- silica soot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 2
- 238000004377 microelectronic Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000377 silicon dioxide Substances 0.000 title 1
- 238000007613 slurry method Methods 0.000 title 1
- 239000004071 soot Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16712199P | 1999-11-23 | 1999-11-23 | |
US60167121 | 1999-11-23 | ||
PCT/US2000/032077 WO2001039260A1 (en) | 1999-11-23 | 2000-11-22 | Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics |
Publications (1)
Publication Number | Publication Date |
---|---|
AU1925801A true AU1925801A (en) | 2001-06-04 |
Family
ID=22606025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU19258/01A Abandoned AU1925801A (en) | 1999-11-23 | 2000-11-22 | Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1238417A1 (en) |
JP (1) | JP2003528447A (en) |
AU (1) | AU1925801A (en) |
TW (1) | TW521337B (en) |
WO (1) | WO2001039260A1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6595834B2 (en) | 1999-06-25 | 2003-07-22 | Corning Incorporated | Method of making <200nm light transmitting optical fluoride crystals for transmitting less than 200nm light |
DE10204471C1 (en) * | 2002-02-05 | 2003-07-03 | Degussa | Aqueous dispersion of cerium oxide-coated doped silica powder, used for chemical-mechanical polishing of semiconductor substrate or coating or in shallow trench insulation, is obtained by mixing doped silica core with cerium salt solution |
JPWO2013035545A1 (en) * | 2011-09-09 | 2015-03-23 | 旭硝子株式会社 | Abrasive grains and manufacturing method thereof, polishing slurry and glass product manufacturing method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159077A (en) * | 1999-07-30 | 2000-12-12 | Corning Incorporated | Colloidal silica polishing abrasive |
-
2000
- 2000-11-22 JP JP2001540830A patent/JP2003528447A/en not_active Withdrawn
- 2000-11-22 AU AU19258/01A patent/AU1925801A/en not_active Abandoned
- 2000-11-22 EP EP00982198A patent/EP1238417A1/en not_active Withdrawn
- 2000-11-22 WO PCT/US2000/032077 patent/WO2001039260A1/en not_active Application Discontinuation
- 2000-12-23 TW TW89127822A patent/TW521337B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1238417A1 (en) | 2002-09-11 |
WO2001039260A1 (en) | 2001-05-31 |
TW521337B (en) | 2003-02-21 |
JP2003528447A (en) | 2003-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |