ATE502310T1 - Ausserordentlicher magnetowiderstand bei raumtemperatur in inhomogenen halbleitern mit kleinem bandabstand - Google Patents

Ausserordentlicher magnetowiderstand bei raumtemperatur in inhomogenen halbleitern mit kleinem bandabstand

Info

Publication number
ATE502310T1
ATE502310T1 AT00980877T AT00980877T ATE502310T1 AT E502310 T1 ATE502310 T1 AT E502310T1 AT 00980877 T AT00980877 T AT 00980877T AT 00980877 T AT00980877 T AT 00980877T AT E502310 T1 ATE502310 T1 AT E502310T1
Authority
AT
Austria
Prior art keywords
inhomogeneity
emr
sensor
van der
disk
Prior art date
Application number
AT00980877T
Other languages
English (en)
Inventor
Daniel Hines
Stuart Solin
Tineke Thio
Tao Zhou
Original Assignee
Tdk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tdk Corp filed Critical Tdk Corp
Application granted granted Critical
Publication of ATE502310T1 publication Critical patent/ATE502310T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/095—Magnetoresistive devices extraordinary magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/37—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using galvano-magnetic devices, e.g. Hall-effect devices using Hall or Hall-related effect, e.g. planar-Hall effect or pseudo-Hall effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/398—Specially shaped layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3993—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures in semi-conductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1143—Magnetoresistive with defined structural feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12937—Co- or Ni-base component next to Fe-base component

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Hard Magnetic Materials (AREA)
  • Paints Or Removers (AREA)
  • Adhesives Or Adhesive Processes (AREA)
AT00980877T 1999-11-30 2000-11-30 Ausserordentlicher magnetowiderstand bei raumtemperatur in inhomogenen halbleitern mit kleinem bandabstand ATE502310T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16796599P 1999-11-30 1999-11-30
US17843100P 2000-01-27 2000-01-27
US09/697,661 US6707122B1 (en) 1999-11-30 2000-10-26 Extraordinary magnetoresistance at room temperature in inhomogeneous narrow-gap semiconductors
PCT/US2000/032556 WO2001041214A1 (en) 1999-11-30 2000-11-30 Extraordinary magnetoresistance at room temperature in inhomogeneous narrow-gap semiconductors

Publications (1)

Publication Number Publication Date
ATE502310T1 true ATE502310T1 (de) 2011-04-15

Family

ID=27389472

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00980877T ATE502310T1 (de) 1999-11-30 2000-11-30 Ausserordentlicher magnetowiderstand bei raumtemperatur in inhomogenen halbleitern mit kleinem bandabstand

Country Status (7)

Country Link
US (1) US6707122B1 (de)
EP (1) EP1155453B1 (de)
JP (1) JP3694233B2 (de)
KR (1) KR100696960B1 (de)
AT (1) ATE502310T1 (de)
DE (1) DE60045736D1 (de)
WO (1) WO2001041214A1 (de)

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US7082838B2 (en) * 2000-08-31 2006-08-01 Tdk Corporation Extraordinary piezoconductance in inhomogeneous semiconductors
US6937967B2 (en) * 2001-02-28 2005-08-30 Tdk Corporation Method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions
US6714374B1 (en) * 2000-08-31 2004-03-30 Nec Corporation Magnetoresistive sensor, magnetoresistive head, and magnetic recording/reproducing apparatus
US20020171962A1 (en) * 2001-05-15 2002-11-21 Seagate Technology Llc Semiconductor/metal read sensor for magnetic recording
US6654210B2 (en) * 2002-04-22 2003-11-25 Sharp Laboratories Of America, Inc. Solid-state inductor and method for same
US6949435B2 (en) * 2003-12-08 2005-09-27 Sharp Laboratories Of America, Inc. Asymmetric-area memory cell
US7444197B2 (en) 2004-05-06 2008-10-28 Smp Logic Systems Llc Methods, systems, and software program for validation and monitoring of pharmaceutical manufacturing processes
US7799273B2 (en) 2004-05-06 2010-09-21 Smp Logic Systems Llc Manufacturing execution system for validation, quality and risk assessment and monitoring of pharmaceutical manufacturing processes
US7167346B2 (en) * 2004-06-30 2007-01-23 Hitachi Global Storage Technologies Netherlands B.V. Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure
US7295406B2 (en) 2004-07-22 2007-11-13 Hitachi Global Storage Technologies Netherlands B.V. Narrow track extraordinary magneto resistive [EMR] device
US7170722B2 (en) * 2004-07-30 2007-01-30 Hitachi Global Storage Technologies Netherlands B.V. Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by a ferromagnetic multilayer
US7203036B2 (en) * 2004-07-30 2007-04-10 Hitachi Global Storage Technologies Netherlands B.V. Planar extraordinary magnetoresistance sensor
US7990978B1 (en) 2004-12-17 2011-08-02 Verizon Services Corp. Dynamic bandwidth queue allocation
US7633718B2 (en) * 2005-06-27 2009-12-15 Hitachi Global Storage Technologies Netherlands, B.V. Lead contact structure for EMR elements
US7738217B2 (en) * 2006-02-13 2010-06-15 Hitachi Global Storage Technologies Netherlands B.V. EMR magnetic head having a magnetic flux guide and a body formed at a tail end of a slider
US7466521B2 (en) * 2006-04-25 2008-12-16 Hitachi Global Storage Technologies Netherlands B.V. EMR structure with bias control and enhanced linearity of signal
EP1868254B1 (de) * 2006-06-13 2010-03-24 Hitachi Ltd. Magnetowiderstandsvorrichtung
US7502206B2 (en) * 2006-07-24 2009-03-10 Hitachi Global Storage Technologies Netherlands B.V. Multiple extraordinary magnetoresistive (EMR) sensor utilizing both current leads
EP2527852A3 (de) 2006-08-01 2014-08-20 Washington University Multifunktionelle Nanoskopie zur Abbildung von Zellen
US8059373B2 (en) * 2006-10-16 2011-11-15 Hitachi Global Storage Technologies Netherlands, B.V. EMR sensor and transistor formed on the same substrate
US7881020B2 (en) * 2007-05-11 2011-02-01 Hitachi Global Storage Technologies Netherlands B.V. Extraordinary magnetoresistive (EMR) device with novel lead structure
KR101327788B1 (ko) * 2007-07-16 2013-11-11 삼성전자주식회사 자기장 센서 및 그를 이용한 자기장 측정 방법
US8035932B2 (en) * 2007-09-20 2011-10-11 Hitachi Global Storage Technologies Netherlands B.V. Lorentz magnetoresistive sensor with integrated signal amplification
US9207291B2 (en) 2007-11-16 2015-12-08 Infineon Technologies Ag XMR angle sensors
US8035927B2 (en) 2008-01-28 2011-10-11 Hitachi Global Storage Technologies Netherlands B.V. EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact
EP2317581B1 (de) * 2009-10-30 2012-03-07 Hitachi, Ltd. Magnetowiderstandsvorrichtung
CN102763229A (zh) * 2010-01-08 2012-10-31 华盛顿大学 基于异常光导(eoc)效应的高分辨率光子检测方法和装置
US8884616B2 (en) 2011-06-22 2014-11-11 Infineon Technologies Ag XMR angle sensors
EP2980874A4 (de) * 2013-03-25 2016-11-16 Asahi Kasei Microdevices Corp Verbundhalbleiterstapel und halbleiterbauelement
FR3042303B1 (fr) * 2015-10-08 2017-12-08 Centre Nat Rech Scient Point memoire magnetique
FR3042634B1 (fr) * 2015-10-16 2017-12-15 Centre Nat Rech Scient Point memoire magnetique
CN111948583A (zh) * 2019-05-17 2020-11-17 爱盛科技股份有限公司 磁场感测装置

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US3708403A (en) * 1971-09-01 1973-01-02 L Terry Self-aligning electroplating mask
US3898359A (en) * 1974-01-15 1975-08-05 Precision Electronic Component Thin film magneto-resistors and methods of making same
EP0678925A1 (de) * 1994-04-18 1995-10-25 General Motors Corporation Magnetfeldsensor
US6024885A (en) * 1997-12-08 2000-02-15 Motorola, Inc. Process for patterning magnetic films
US5965283A (en) * 1997-12-23 1999-10-12 Nec Research Institute, Inc. GMR enhancement in inhomogeneous semiconductors for use in magnetoresistance sensors
US6353317B1 (en) * 2000-01-19 2002-03-05 Imperial College Of Science, Technology And Medicine Mesoscopic non-magnetic semiconductor magnetoresistive sensors fabricated with island lithography

Also Published As

Publication number Publication date
JP3694233B2 (ja) 2005-09-14
EP1155453A1 (de) 2001-11-21
JP2001223411A (ja) 2001-08-17
EP1155453A4 (de) 2007-08-08
US6707122B1 (en) 2004-03-16
DE60045736D1 (de) 2011-04-28
KR100696960B1 (ko) 2007-03-20
WO2001041214A1 (en) 2001-06-07
EP1155453B1 (de) 2011-03-16
KR20010094744A (ko) 2001-11-01

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