ATE43744T1 - MOS CIRCUIT WITH AN E2 PROM. - Google Patents

MOS CIRCUIT WITH AN E2 PROM.

Info

Publication number
ATE43744T1
ATE43744T1 AT85112212T AT85112212T ATE43744T1 AT E43744 T1 ATE43744 T1 AT E43744T1 AT 85112212 T AT85112212 T AT 85112212T AT 85112212 T AT85112212 T AT 85112212T AT E43744 T1 ATE43744 T1 AT E43744T1
Authority
AT
Austria
Prior art keywords
mos circuit
prom
circuit
output
radiation sensitive
Prior art date
Application number
AT85112212T
Other languages
German (de)
Inventor
Hartmut Dr Phys Schrenk
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of ATE43744T1 publication Critical patent/ATE43744T1/en

Links

Classifications

    • G—PHYSICS
    • G07—CHECKING-DEVICES
    • G07F—COIN-FREED OR LIKE APPARATUS
    • G07F7/00—Mechanisms actuated by objects other than coins to free or to actuate vending, hiring, coin or paper currency dispensing or refunding apparatus
    • G07F7/08—Mechanisms actuated by objects other than coins to free or to actuate vending, hiring, coin or paper currency dispensing or refunding apparatus by coded identity card or credit card or other personal identification means
    • G07F7/10—Mechanisms actuated by objects other than coins to free or to actuate vending, hiring, coin or paper currency dispensing or refunding apparatus by coded identity card or credit card or other personal identification means together with a coded signal, e.g. in the form of personal identification information, like personal identification number [PIN] or biometric data
    • G07F7/1008—Active credit-cards provided with means to personalise their use, e.g. with PIN-introduction/comparison system
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/073—Special arrangements for circuits, e.g. for protecting identification code in memory
    • G06K19/07309—Means for preventing undesired reading or writing from or onto record carriers
    • G06K19/07372—Means for preventing undesired reading or writing from or onto record carriers by detecting tampering with the circuit
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
    • G06Q20/00—Payment architectures, schemes or protocols
    • G06Q20/30—Payment architectures, schemes or protocols characterised by the use of specific devices or networks
    • G06Q20/34—Payment architectures, schemes or protocols characterised by the use of specific devices or networks using cards, e.g. integrated circuit [IC] cards or magnetic cards
    • G06Q20/341—Active cards, i.e. cards including their own processing means, e.g. including an IC or chip
    • G—PHYSICS
    • G07—CHECKING-DEVICES
    • G07F—COIN-FREED OR LIKE APPARATUS
    • G07F7/00—Mechanisms actuated by objects other than coins to free or to actuate vending, hiring, coin or paper currency dispensing or refunding apparatus
    • G07F7/08—Mechanisms actuated by objects other than coins to free or to actuate vending, hiring, coin or paper currency dispensing or refunding apparatus by coded identity card or credit card or other personal identification means
    • G07F7/0806—Details of the card
    • G07F7/0813—Specific details related to card security
    • G07F7/082—Features insuring the integrity of the data on or in the card
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computer Security & Cryptography (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Business, Economics & Management (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Accounting & Taxation (AREA)
  • Strategic Management (AREA)
  • General Business, Economics & Management (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Storage Device Security (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1. Monolithic integrated MOS circuit incorporating a memory array (1a, b) composed of electrically programmable memory cells (5), for example EEPROMs, characterized in that the output of at least one memory cell (5) can be connected to a predetermined potential by means of at least one blocking circuit (10a, b) under the control of at least one radiation sensitive sensor (8, 14).
AT85112212T 1984-09-27 1985-09-26 MOS CIRCUIT WITH AN E2 PROM. ATE43744T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3435495 1984-09-27
EP85112212A EP0178512B1 (en) 1984-09-27 1985-09-26 Mos circuit including an eeprom

Publications (1)

Publication Number Publication Date
ATE43744T1 true ATE43744T1 (en) 1989-06-15

Family

ID=6246514

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85112212T ATE43744T1 (en) 1984-09-27 1985-09-26 MOS CIRCUIT WITH AN E2 PROM.

Country Status (5)

Country Link
US (1) US4910707A (en)
EP (1) EP0178512B1 (en)
JP (1) JPS6184054A (en)
AT (1) ATE43744T1 (en)
DE (1) DE3570792D1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107139A (en) * 1990-03-30 1992-04-21 Texas Instruments Incorporated On-chip transient event detector
US5053992A (en) * 1990-10-04 1991-10-01 General Instrument Corporation Prevention of inspection of secret data stored in encapsulated integrated circuit chip
DE4212111C2 (en) * 1992-04-10 2003-05-22 Angewandte Digital Elektronik Indication of improperly treated chip cards
JPH0793977A (en) * 1993-04-26 1995-04-07 Samsung Electron Co Ltd Intermediate-voltage generation circuit of semiconductor memory device
GB2319602B (en) * 1996-11-21 2000-10-04 Motorola Ltd Light detection device
EP1128248B1 (en) * 2000-02-21 2016-09-14 Infineon Technologies AG Semiconductor chip with a light sensitive element
DE10101995A1 (en) * 2001-01-18 2002-07-25 Philips Corp Intellectual Pty Electrical or electronic switching arrangement comprises a detector unit and a comparator unit connected to the detector unit to compare the starting voltage with a reference voltage
US6459629B1 (en) * 2001-05-03 2002-10-01 Hrl Laboratories, Llc Memory with a bit line block and/or a word line block for preventing reverse engineering
DE10140045B4 (en) * 2001-08-16 2006-05-04 Infineon Technologies Ag IC chip with protective structure
DE10206186B4 (en) 2002-02-14 2010-01-28 Infineon Technologies Ag Memory matrix and method for securing a memory matrix
DE10218096A1 (en) * 2002-04-23 2003-11-13 Infineon Technologies Ag Integrated circuit
DE10221790A1 (en) * 2002-05-15 2003-11-27 Giesecke & Devrient Gmbh Security system for use with the memory content of a smart integrated circuit data card uses specific cells with data used to detect any change
DE10345240A1 (en) * 2003-09-29 2005-05-04 Infineon Technologies Ag Integrated circuit with radiation sensor arrangement
US8997255B2 (en) * 2006-07-31 2015-03-31 Inside Secure Verifying data integrity in a data storage device
US8352752B2 (en) * 2006-09-01 2013-01-08 Inside Secure Detecting radiation-based attacks
US20080061843A1 (en) * 2006-09-11 2008-03-13 Asier Goikoetxea Yanci Detecting voltage glitches
WO2009031057A2 (en) * 2007-09-04 2009-03-12 Nds Limited Security chip
GB2488583A (en) 2011-03-03 2012-09-05 Nds Ltd Preventing unauthorized access to data stored in non-volatile memories
CN108701193B (en) * 2016-02-12 2022-08-30 汉阳大学校产学协力团 Secure semiconductor chip and method for operating the same
WO2017138773A1 (en) * 2016-02-12 2017-08-17 한양대학교 산학협력단 Security semiconductor chip and method for operating same
US11316210B2 (en) 2018-11-21 2022-04-26 Samsung Sdi Co., Ltd. Control unit for a battery module or system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3551761A (en) * 1968-08-13 1970-12-29 Ibm Integrated photodiode array
US3696250A (en) * 1970-09-17 1972-10-03 Rca Corp Signal transfer system for panel type image sensor
US3721963A (en) * 1972-03-13 1973-03-20 North American Rockwell Photon to digital converter using photon flux integration
US4499557A (en) * 1980-10-28 1985-02-12 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
US4417325A (en) * 1981-07-13 1983-11-22 Eliyahou Harari Highly scaleable dynamic ram cell with self-signal amplification
US4677742A (en) * 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US4608672A (en) * 1983-07-14 1986-08-26 Honeywell Inc. Semiconductor memory
US4714901A (en) * 1985-10-15 1987-12-22 Gould Inc. Temperature compensated complementary metal-insulator-semiconductor oscillator
US4722822A (en) * 1985-11-27 1988-02-02 Advanced Micro Devices, Inc. Column-current multiplexing driver circuit for high density proms
GB8531347D0 (en) * 1985-12-19 1986-01-29 Goran K Optoelectronic dynamic memory device

Also Published As

Publication number Publication date
EP0178512A1 (en) 1986-04-23
JPS6184054A (en) 1986-04-28
DE3570792D1 (en) 1989-07-06
US4910707A (en) 1990-03-20
EP0178512B1 (en) 1989-05-31

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Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee