ATE332586T1 - Integrierte schaltung mit niedriger versorgungsspannung - Google Patents

Integrierte schaltung mit niedriger versorgungsspannung

Info

Publication number
ATE332586T1
ATE332586T1 AT03388028T AT03388028T ATE332586T1 AT E332586 T1 ATE332586 T1 AT E332586T1 AT 03388028 T AT03388028 T AT 03388028T AT 03388028 T AT03388028 T AT 03388028T AT E332586 T1 ATE332586 T1 AT E332586T1
Authority
AT
Austria
Prior art keywords
integrated circuit
supply voltage
low supply
sub
circuit
Prior art date
Application number
AT03388028T
Other languages
English (en)
Inventor
Hubert Kaeslin
Norbert Felber
Original Assignee
Bernafon Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bernafon Ag filed Critical Bernafon Ag
Application granted granted Critical
Publication of ATE332586T1 publication Critical patent/ATE332586T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528Geometry or layout of the interconnection structure
    • H01L23/5286Arrangements of power or ground buses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Dram (AREA)
  • Control Of Electrical Variables (AREA)
  • Logic Circuits (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT03388028T 2003-04-30 2003-04-30 Integrierte schaltung mit niedriger versorgungsspannung ATE332586T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP20030388028 EP1473812B1 (de) 2003-04-30 2003-04-30 Integrierte Schaltung mit niedriger Versorgungsspannung

Publications (1)

Publication Number Publication Date
ATE332586T1 true ATE332586T1 (de) 2006-07-15

Family

ID=32981997

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03388028T ATE332586T1 (de) 2003-04-30 2003-04-30 Integrierte schaltung mit niedriger versorgungsspannung

Country Status (7)

Country Link
US (1) US7710192B2 (de)
EP (1) EP1473812B1 (de)
AT (1) ATE332586T1 (de)
AU (1) AU2004234945B2 (de)
DE (1) DE60306621T2 (de)
DK (1) DK1473812T3 (de)
WO (1) WO2004098016A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7679216B2 (en) * 2007-07-20 2010-03-16 Infineon Technologies Ag Power supply scheme for reduced power compensation
US8476962B2 (en) * 2009-11-18 2013-07-02 Freescale Semiconductor, Inc. System having multiple voltage tiers and method therefor
US8169257B2 (en) * 2009-11-18 2012-05-01 Freescale Semiconductor, Inc. System and method for communicating between multiple voltage tiers
US9374020B2 (en) * 2012-01-17 2016-06-21 Massachusetts Institute Of Technology Stacked switched capacitor energy buffer circuit architecture
US8878387B1 (en) * 2013-05-16 2014-11-04 Micrel, Inc. Multi-level stack voltage system for integrated circuits
US20150168973A1 (en) * 2013-12-18 2015-06-18 Hashfast LLC Stacked chips powered from shared voltage sources
WO2016040917A1 (en) * 2014-09-13 2016-03-17 The Regents Of The University Of Colorado, A Body Corporate Stacked switched capacitor energy buffer circuit
CN105515368B (zh) * 2014-10-15 2018-04-06 联合聚晶股份有限公司 多电压驱动电路
US9645604B1 (en) 2016-01-05 2017-05-09 Bitfury Group Limited Circuits and techniques for mesochronous processing
US9660627B1 (en) 2016-01-05 2017-05-23 Bitfury Group Limited System and techniques for repeating differential signals
US9514264B1 (en) 2016-01-05 2016-12-06 Bitfury Group Limited Layouts of transmission gates and related systems and techniques

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09101496A (ja) * 1995-10-04 1997-04-15 Sharp Corp 表示装置駆動用電圧発生装置
US6121751A (en) * 1999-03-11 2000-09-19 Lockheed Martin Corporation Battery charger for charging a stack of multiple lithium ion battery cells
US6479974B2 (en) * 2000-12-28 2002-11-12 International Business Machines Corporation Stacked voltage rails for low-voltage DC distribution
WO2004102628A2 (en) * 2003-05-08 2004-11-25 The Trustees Of Columbia University In The City Of New York Examiner

Also Published As

Publication number Publication date
EP1473812A1 (de) 2004-11-03
WO2004098016A2 (en) 2004-11-11
US7710192B2 (en) 2010-05-04
US20070253235A1 (en) 2007-11-01
AU2004234945A1 (en) 2004-11-11
DE60306621T2 (de) 2007-06-21
WO2004098016A3 (en) 2005-01-20
DK1473812T3 (da) 2006-10-23
DE60306621D1 (de) 2006-08-17
AU2004234945B2 (en) 2009-08-06
EP1473812B1 (de) 2006-07-05

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties