ATE218752T1 - METHOD FOR EXAMINING AND/OR MODIFYING SURFACE STRUCTURES OF A SAMPLE - Google Patents

METHOD FOR EXAMINING AND/OR MODIFYING SURFACE STRUCTURES OF A SAMPLE

Info

Publication number
ATE218752T1
ATE218752T1 AT99971965T AT99971965T ATE218752T1 AT E218752 T1 ATE218752 T1 AT E218752T1 AT 99971965 T AT99971965 T AT 99971965T AT 99971965 T AT99971965 T AT 99971965T AT E218752 T1 ATE218752 T1 AT E218752T1
Authority
AT
Austria
Prior art keywords
sample
examining
surface structures
modifying surface
modifying
Prior art date
Application number
AT99971965T
Other languages
German (de)
Inventor
Wilhelm Bruenger
Original Assignee
Fraunhofer Ges Forschung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Ges Forschung filed Critical Fraunhofer Ges Forschung
Application granted granted Critical
Publication of ATE218752T1 publication Critical patent/ATE218752T1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2002—Controlling environment of sample
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2602—Details
    • H01J2237/2605—Details operating at elevated pressures, e.g. atmosphere
    • H01J2237/2608—Details operating at elevated pressures, e.g. atmosphere with environmental specimen chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

In a method of examining the surface structures of a sample or of modifying the surface structures of a sample by means of a beam impinging on the surface structure of the sample, gas is supplied discontinuously, preferably in a pulsed mode, at least in the area of impingement of the beam on the surface structure of the sample.
AT99971965T 1998-11-09 1999-10-25 METHOD FOR EXAMINING AND/OR MODIFYING SURFACE STRUCTURES OF A SAMPLE ATE218752T1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19851622A DE19851622A1 (en) 1998-11-09 1998-11-09 Method for examining and / or modifying surface structures of a sample
PCT/EP1999/008057 WO2000028571A1 (en) 1998-11-09 1999-10-25 Method for examining and/or modifying surface structures of a sample

Publications (1)

Publication Number Publication Date
ATE218752T1 true ATE218752T1 (en) 2002-06-15

Family

ID=7887184

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99971965T ATE218752T1 (en) 1998-11-09 1999-10-25 METHOD FOR EXAMINING AND/OR MODIFYING SURFACE STRUCTURES OF A SAMPLE

Country Status (6)

Country Link
US (1) US6661005B1 (en)
EP (1) EP1114435B1 (en)
JP (1) JP3921347B2 (en)
AT (1) ATE218752T1 (en)
DE (2) DE19851622A1 (en)
WO (1) WO2000028571A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0969494A1 (en) * 1998-07-03 2000-01-05 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Apparatus and method for examining specimen with a charged particle beam
DE10208043B4 (en) * 2002-02-25 2011-01-13 Carl Zeiss Nts Gmbh Material processing system and material processing methods
US20050103272A1 (en) 2002-02-25 2005-05-19 Leo Elektronenmikroskopie Gmbh Material processing system and method
EP1816668A2 (en) * 2006-02-01 2007-08-08 FEI Company Particle-optical apparatus with a predetermined final vacuum pressure
US7807062B2 (en) 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US7791055B2 (en) 2006-07-10 2010-09-07 Micron Technology, Inc. Electron induced chemical etching/deposition for enhanced detection of surface defects
US7892978B2 (en) 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7833427B2 (en) 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
JP5074226B2 (en) * 2008-02-16 2012-11-14 エスアイアイ・ナノテクノロジー株式会社 Charged particle beam equipment
DE102012001267A1 (en) * 2012-01-23 2013-07-25 Carl Zeiss Microscopy Gmbh Particle jet system with supply of process gas to a processing location
DE102015204091B4 (en) 2015-03-06 2023-06-07 Carl Zeiss Microscopy Gmbh Methods and devices for charge compensation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4341957A (en) * 1975-11-26 1982-07-27 Analytical Radiation Corporation Fluorescent antibody composition for immunofluorometric assay
DE3332248A1 (en) * 1983-09-07 1985-03-21 Lutz-Achim Dipl.-Ing. 7000 Stuttgart Gäng System for discharging charges on test specimens in scanning electron microscope investigations
EP0296262B1 (en) * 1987-06-22 1991-08-28 International Business Machines Corporation Method for investigating surfaces at nanometer and picosecond resolution and laser-sampled scanning tunneling microscope for performing said method
US4983830A (en) * 1989-06-29 1991-01-08 Seiko Instruments Inc. Focused ion beam apparatus having charged particle energy filter
JP3310136B2 (en) * 1994-09-17 2002-07-29 株式会社東芝 Charged beam device
US5869833A (en) * 1997-01-16 1999-02-09 Kla-Tencor Corporation Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments
EP0969494A1 (en) 1998-07-03 2000-01-05 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Apparatus and method for examining specimen with a charged particle beam

Also Published As

Publication number Publication date
DE59901662D1 (en) 2002-07-11
US6661005B1 (en) 2003-12-09
JP3921347B2 (en) 2007-05-30
EP1114435B1 (en) 2002-06-05
DE19851622A1 (en) 2000-05-18
EP1114435A1 (en) 2001-07-11
WO2000028571A1 (en) 2000-05-18
JP2002529902A (en) 2002-09-10

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Legal Events

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