ATE214194T1 - SINGLE ELECTRON MEMORY CELL ARRANGEMENT - Google Patents
SINGLE ELECTRON MEMORY CELL ARRANGEMENTInfo
- Publication number
- ATE214194T1 ATE214194T1 AT97107314T AT97107314T ATE214194T1 AT E214194 T1 ATE214194 T1 AT E214194T1 AT 97107314 T AT97107314 T AT 97107314T AT 97107314 T AT97107314 T AT 97107314T AT E214194 T1 ATE214194 T1 AT E214194T1
- Authority
- AT
- Austria
- Prior art keywords
- memory cell
- cell arrangement
- single electron
- electron memory
- electron transistor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/02—Structural aspects of erasable programmable read-only memories
- G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/937—Single electron transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Abstract
Each memory cell of an array has a single-electron transistor and a single-electron memory element. The single-electron transistor is driven by a charge stored in the memory element. When a read voltage is applied, a current flows through the single-electron transistor which is dependent on the stored charge, but the stored charge in not changed. When a write voltage is applied, the magnitude of which is greater than the read voltage, then the stored charge is changed. The memory cells of the array are each connected between first lines and transverse second lines of a memory cell configuration.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19621994A DE19621994C1 (en) | 1996-05-31 | 1996-05-31 | Single electron memory cell arrangement |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE214194T1 true ATE214194T1 (en) | 2002-03-15 |
Family
ID=7795864
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT97107314T ATE214194T1 (en) | 1996-05-31 | 1997-05-02 | SINGLE ELECTRON MEMORY CELL ARRANGEMENT |
Country Status (7)
Country | Link |
---|---|
US (1) | US5844834A (en) |
EP (1) | EP0810609B1 (en) |
JP (1) | JP4057675B2 (en) |
KR (1) | KR100435924B1 (en) |
AT (1) | ATE214194T1 (en) |
DE (2) | DE19621994C1 (en) |
TW (1) | TW382707B (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0881691B1 (en) | 1997-05-30 | 2004-09-01 | Matsushita Electric Industrial Co., Ltd. | Quantum dot device |
DE19820050C1 (en) * | 1998-05-05 | 1999-03-25 | Siemens Ag | Circuit arrangement with single electron components in CMOS logic circuit application |
KR100325689B1 (en) | 1999-12-01 | 2002-02-25 | 오길록 | Single - electron memory device using the electron - hole coupling |
US6483125B1 (en) | 2001-07-13 | 2002-11-19 | North Carolina State University | Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes |
US6653653B2 (en) | 2001-07-13 | 2003-11-25 | Quantum Logic Devices, Inc. | Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes |
US6673717B1 (en) | 2002-06-26 | 2004-01-06 | Quantum Logic Devices, Inc. | Methods for fabricating nanopores for single-electron devices |
US7135697B2 (en) * | 2004-02-25 | 2006-11-14 | Wisconsin Alumni Research Foundation | Spin readout and initialization in semiconductor quantum dots |
EP1748501B1 (en) * | 2005-07-26 | 2007-10-17 | Universität Duisburg-Essen | Microelectronic component |
US7602069B2 (en) * | 2004-03-31 | 2009-10-13 | Universität Duisburg-Essen | Micro electronic component with electrically accessible metallic clusters |
KR100673408B1 (en) * | 2005-02-07 | 2007-01-24 | 최중범 | Momory cell and memory device employing single electron transistor |
US20090066853A1 (en) * | 2007-09-10 | 2009-03-12 | Sony Corporation Sony Electronics Inc. | Remote control with recessed keypad |
US20120235968A1 (en) * | 2011-03-15 | 2012-09-20 | Qualcomm Mems Technologies, Inc. | Method and apparatus for line time reduction |
US9558820B2 (en) | 2013-10-29 | 2017-01-31 | Hewlett Packard Enterprise Development Lp | Resistive crosspoint memory array sensing |
US11047877B2 (en) * | 2017-09-28 | 2021-06-29 | Quantum Silicon Inc. | Initiating and monitoring the evolution of single electrons within atom-defined structures |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5357460A (en) * | 1991-05-28 | 1994-10-18 | Sharp Kabushiki Kaisha | Semiconductor memory device having two transistors and at least one ferroelectric film capacitor |
DE4212220C3 (en) * | 1992-04-09 | 2000-05-04 | Guenter Schmid | Use of an arrangement of cluster molecules as a microelectronic component |
-
1996
- 1996-05-31 DE DE19621994A patent/DE19621994C1/en not_active Expired - Fee Related
-
1997
- 1997-05-02 AT AT97107314T patent/ATE214194T1/en not_active IP Right Cessation
- 1997-05-02 DE DE59706533T patent/DE59706533D1/en not_active Expired - Fee Related
- 1997-05-02 EP EP97107314A patent/EP0810609B1/en not_active Expired - Lifetime
- 1997-05-27 TW TW086107163A patent/TW382707B/en not_active IP Right Cessation
- 1997-05-28 JP JP15308497A patent/JP4057675B2/en not_active Expired - Fee Related
- 1997-05-29 KR KR1019970021474A patent/KR100435924B1/en not_active IP Right Cessation
- 1997-06-02 US US08/867,114 patent/US5844834A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100435924B1 (en) | 2004-07-16 |
DE59706533D1 (en) | 2002-04-11 |
TW382707B (en) | 2000-02-21 |
US5844834A (en) | 1998-12-01 |
EP0810609A3 (en) | 1999-08-11 |
JP4057675B2 (en) | 2008-03-05 |
KR970076815A (en) | 1997-12-12 |
DE19621994C1 (en) | 1997-06-12 |
EP0810609A2 (en) | 1997-12-03 |
JPH1098160A (en) | 1998-04-14 |
EP0810609B1 (en) | 2002-03-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
REN | Ceased due to non-payment of the annual fee |