ATE185645T1 - Negative ladungspumpe für niedrige versorgungsspannung - Google Patents
Negative ladungspumpe für niedrige versorgungsspannungInfo
- Publication number
- ATE185645T1 ATE185645T1 AT96927429T AT96927429T ATE185645T1 AT E185645 T1 ATE185645 T1 AT E185645T1 AT 96927429 T AT96927429 T AT 96927429T AT 96927429 T AT96927429 T AT 96927429T AT E185645 T1 ATE185645 T1 AT E185645T1
- Authority
- AT
- Austria
- Prior art keywords
- charge pump
- supply voltage
- negative charge
- low supply
- channel intrinsic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/071—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps adapted to generate a negative voltage output from a positive voltage source
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
- H02M3/075—Charge pumps of the Schenkel-type including a plurality of stages and two sets of clock signals, one set for the odd and one set for the even numbered stages
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Dc-Dc Converters (AREA)
- Fuel-Injection Apparatus (AREA)
- Control Of The Air-Fuel Ratio Of Carburetors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55970596A | 1996-02-15 | 1996-02-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE185645T1 true ATE185645T1 (de) | 1999-10-15 |
Family
ID=24234681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT96927429T ATE185645T1 (de) | 1996-02-15 | 1996-08-15 | Negative ladungspumpe für niedrige versorgungsspannung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5973979A (de) |
| EP (1) | EP0880783B1 (de) |
| AT (1) | ATE185645T1 (de) |
| DE (1) | DE69604702T2 (de) |
| WO (1) | WO1997030455A1 (de) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6166585A (en) * | 1998-08-31 | 2000-12-26 | Conexant Systems, Inc. | Methods and apparatus for a high efficiency charge pump that includes a MOSFET capacitor operating in an accumulation region |
| US6359947B1 (en) * | 1999-08-31 | 2002-03-19 | Intel Corporation | Split clock buffers for a negative charge pump |
| JP3910765B2 (ja) * | 1999-09-08 | 2007-04-25 | 株式会社東芝 | 電圧発生回路及びこれを用いた電圧転送回路 |
| US6297974B1 (en) | 1999-09-27 | 2001-10-02 | Intel Corporation | Method and apparatus for reducing stress across capacitors used in integrated circuits |
| EP1124314B1 (de) * | 2000-02-09 | 2009-01-07 | EM Microelectronic-Marin SA | Ladungspumpenvorrichtung |
| US6492861B2 (en) | 2000-02-09 | 2002-12-10 | Em Microelectronic-Marin Sa | Electronic charge pump device |
| US6356137B1 (en) | 2000-06-26 | 2002-03-12 | Fairchild Semiconductor Corporation | Voltage boost circuit with low power supply voltage |
| US6664846B1 (en) | 2000-08-30 | 2003-12-16 | Altera Corporation | Cross coupled N-channel negative pump |
| US6385065B1 (en) | 2000-09-14 | 2002-05-07 | Fairchild Semiconductor Corporation | Low voltage charge pump employing distributed charge boosting |
| US6356469B1 (en) * | 2000-09-14 | 2002-03-12 | Fairchild Semiconductor Corporation | Low voltage charge pump employing optimized clock amplitudes |
| US6621326B1 (en) | 2000-10-26 | 2003-09-16 | Altera Corporation | P-channel negative pumps |
| US7057949B1 (en) | 2002-01-16 | 2006-06-06 | Advanced Micro Devices, Inc. | Method and apparatus for pre-charging negative pump MOS regulation capacitors |
| US6878981B2 (en) * | 2003-03-20 | 2005-04-12 | Tower Semiconductor Ltd. | Triple-well charge pump stage with no threshold voltage back-bias effect |
| CN1306690C (zh) * | 2003-07-30 | 2007-03-21 | 百利通电子(上海)有限公司 | 一种可对正负极分别充电的双电压电荷泵及其控制电路 |
| US7188686B2 (en) * | 2004-06-07 | 2007-03-13 | Varco I/P, Inc. | Top drive systems |
| US7382177B2 (en) * | 2004-10-25 | 2008-06-03 | Micron Technology, Inc. | Voltage charge pump and method of operating the same |
| US7301388B2 (en) * | 2004-12-22 | 2007-11-27 | Mosel Vitelic Corporation | Charge pump with ensured pumping capability |
| US9153327B2 (en) * | 2011-08-01 | 2015-10-06 | Ememory Technology Inc. | Flash memory apparatus with voltage boost circuit |
| US9165661B2 (en) | 2012-02-16 | 2015-10-20 | Cypress Semiconductor Corporation | Systems and methods for switching between voltages |
| US20160006348A1 (en) * | 2014-07-07 | 2016-01-07 | Ememory Technology Inc. | Charge pump apparatus |
| KR102523373B1 (ko) * | 2018-11-13 | 2023-04-18 | 삼성전기주식회사 | 네가티브 전압 회로 |
| US10826389B1 (en) | 2019-05-28 | 2020-11-03 | Samsung Electronics Co., Ltd. | Charge pump device and image sensor including the same |
| US11764673B2 (en) * | 2021-03-03 | 2023-09-19 | Stmicroelectronics International N.V. | NMOS-based negative charge pump circuit |
| CN113872435A (zh) * | 2021-10-19 | 2021-12-31 | 普冉半导体(上海)股份有限公司 | 正、负电压电荷泵单级电路及四相电荷泵电路 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4485433A (en) * | 1982-12-22 | 1984-11-27 | Ncr Corporation | Integrated circuit dual polarity high voltage multiplier for extended operating temperature range |
| IT1221261B (it) * | 1988-06-28 | 1990-06-27 | Sgs Thomson Microelectronics | Moltiplicatore di tensione omos |
| US5081371A (en) * | 1990-11-07 | 1992-01-14 | U.S. Philips Corp. | Integrated charge pump circuit with back bias voltage reduction |
| JP3170038B2 (ja) * | 1992-05-19 | 2001-05-28 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US5400286A (en) * | 1993-08-17 | 1995-03-21 | Catalyst Semiconductor Corp. | Self-recovering erase scheme to enhance flash memory endurance |
| TW271011B (de) * | 1994-04-20 | 1996-02-21 | Nippon Steel Corp |
-
1996
- 1996-08-15 AT AT96927429T patent/ATE185645T1/de not_active IP Right Cessation
- 1996-08-15 EP EP96927429A patent/EP0880783B1/de not_active Expired - Lifetime
- 1996-08-15 WO PCT/US1996/013232 patent/WO1997030455A1/en not_active Ceased
- 1996-08-15 DE DE69604702T patent/DE69604702T2/de not_active Expired - Fee Related
- 1996-12-26 US US08/774,307 patent/US5973979A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5973979A (en) | 1999-10-26 |
| WO1997030455A1 (en) | 1997-08-21 |
| DE69604702T2 (de) | 2000-06-15 |
| EP0880783B1 (de) | 1999-10-13 |
| DE69604702D1 (de) | 1999-11-18 |
| EP0880783A1 (de) | 1998-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69604702D1 (de) | Negative ladungspumpe für niedrige versorgungsspannung | |
| EP0656629A3 (de) | Gatestromverzorgung | |
| EP0750315A3 (de) | Nichtflüchtige Halbleiterspeicher | |
| TW376584B (en) | Low voltage single supply CMOS electrically erasable read-only memory | |
| KR100381962B1 (ko) | 비휘발성 메모리 장치의 로우 디코더 | |
| US5414669A (en) | Method and apparatus for programming and erasing flash EEPROM memory arrays utilizing a charge pump circuit | |
| EP0633576A2 (de) | Integrierte Halbleiterschaltung | |
| KR940010471A (ko) | 네거티브 파워서플라이 | |
| JPH10135424A5 (de) | ||
| EP3790009A1 (de) | Nichtflüchtiger halbleiterspeicher mit mehreren externen leistungsversorgungen | |
| US7957201B2 (en) | Flash memory device operating at multiple speeds | |
| WO1999000797A3 (en) | Node-precise voltage regulation for a mos memory system | |
| EP1528572A3 (de) | Wortleitung Speisespannungsverstärkungsschaltung für DRAM | |
| ATE371250T1 (de) | Programmierung mit verstärktem substrat/tub für flash-speicher | |
| EP0370416A3 (de) | Bauweise für einen durch einen Blitz löschbaren EPROM-Speicher | |
| US6549461B2 (en) | Driving circuits for a memory cell array in a NAND-type flash memory device | |
| US5592430A (en) | Semiconductor device equipped with simple stable switching circuit for selectively supplying different power voltages | |
| US5377138A (en) | Semiconductor memory and data processing device | |
| KR960025732A (ko) | 동작전류 소모를 줄인 반도체 메모리 소자 | |
| TW279988B (en) | Low supply voltage negative charge pump | |
| US7113442B2 (en) | Non-volatile semiconductor memory, semiconductor device and charge pump circuit | |
| US5659501A (en) | Method and device for supplying negative programming voltages to non-volatile memory cells in a non-volatile memory device | |
| DE69809399D1 (de) | Pumpensteuerschaltung | |
| EP0598974B1 (de) | Integrierte Halbleiterschaltung | |
| JPS6472396A (en) | Memory cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |