ATE110126T1 - Verfahren und vorrichtung zur herstellung von kristallen sowie kristall. - Google Patents

Verfahren und vorrichtung zur herstellung von kristallen sowie kristall.

Info

Publication number
ATE110126T1
ATE110126T1 AT92100323T AT92100323T ATE110126T1 AT E110126 T1 ATE110126 T1 AT E110126T1 AT 92100323 T AT92100323 T AT 92100323T AT 92100323 T AT92100323 T AT 92100323T AT E110126 T1 ATE110126 T1 AT E110126T1
Authority
AT
Austria
Prior art keywords
crystals
crystal
beta
sodium ions
ions
Prior art date
Application number
AT92100323T
Other languages
German (de)
English (en)
Inventor
Werner Prof Dr Rer Nat Urland
Frank Dipl-Chem Tietz
Original Assignee
Urland Werner
Tietz Frank
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Urland Werner, Tietz Frank filed Critical Urland Werner
Application granted granted Critical
Publication of ATE110126T1 publication Critical patent/ATE110126T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Conductive Materials (AREA)
AT92100323T 1991-01-25 1992-01-10 Verfahren und vorrichtung zur herstellung von kristallen sowie kristall. ATE110126T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4102136A DE4102136C1 (enExample) 1991-01-25 1991-01-25

Publications (1)

Publication Number Publication Date
ATE110126T1 true ATE110126T1 (de) 1994-09-15

Family

ID=6423663

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92100323T ATE110126T1 (de) 1991-01-25 1992-01-10 Verfahren und vorrichtung zur herstellung von kristallen sowie kristall.

Country Status (4)

Country Link
EP (1) EP0496220B1 (enExample)
AT (1) ATE110126T1 (enExample)
DE (2) DE4102136C1 (enExample)
ES (1) ES2062828T3 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119980441B (zh) * 2025-04-15 2025-07-18 常州臻晶半导体有限公司 用于液相法生长单炉多组碳化硅晶体的装置及其使用方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3715245A (en) * 1971-02-17 1973-02-06 Gen Electric Selective liquid phase epitaxial growth process
US4664849A (en) * 1983-06-29 1987-05-12 University Patents, Inc. Optical materials from intercalation of polyvalent cations in beta double prime alumina

Also Published As

Publication number Publication date
DE4102136C1 (enExample) 1992-05-14
EP0496220B1 (de) 1994-08-17
ES2062828T3 (es) 1994-12-16
DE59200373D1 (de) 1994-09-22
EP0496220A1 (de) 1992-07-29

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Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee