ATA18422001A - SILICON CONTACTS FOR ION IMPLANTATION - Google Patents

SILICON CONTACTS FOR ION IMPLANTATION

Info

Publication number
ATA18422001A
ATA18422001A AT18422001A AT18422001A ATA18422001A AT A18422001 A ATA18422001 A AT A18422001A AT 18422001 A AT18422001 A AT 18422001A AT 18422001 A AT18422001 A AT 18422001A AT A18422001 A ATA18422001 A AT A18422001A
Authority
AT
Austria
Prior art keywords
ion implantation
silicon contacts
contacts
silicon
implantation
Prior art date
Application number
AT18422001A
Other languages
German (de)
Other versions
AT410450B (en
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of ATA18422001A publication Critical patent/ATA18422001A/en
Application granted granted Critical
Publication of AT410450B publication Critical patent/AT410450B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266Bombardment with radiation with high-energy radiation producing ion implantation using masks

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
AT18422001A 2000-12-13 2001-11-23 SILICON CONTACT MASK FOR ION IMPLANTATION AT410450B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2000162016 DE10062016C2 (en) 2000-12-13 2000-12-13 Silicon contact mask for ion implantation, use of such a contact mask, method for producing such a contact mask, use of such a production method and method for producing a wafer with such a mask

Publications (2)

Publication Number Publication Date
ATA18422001A true ATA18422001A (en) 2002-09-15
AT410450B AT410450B (en) 2003-04-25

Family

ID=7666931

Family Applications (1)

Application Number Title Priority Date Filing Date
AT18422001A AT410450B (en) 2000-12-13 2001-11-23 SILICON CONTACT MASK FOR ION IMPLANTATION

Country Status (2)

Country Link
AT (1) AT410450B (en)
DE (1) DE10062016C2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3176643D1 (en) * 1981-10-30 1988-03-10 Ibm Deutschland Shadow projecting mask for ion implantation and lithography by ion beam radiation
JPH10260523A (en) * 1997-03-18 1998-09-29 Nikon Corp Production of silicon stencil mask

Also Published As

Publication number Publication date
AT410450B (en) 2003-04-25
DE10062016A1 (en) 2002-06-27
DE10062016C2 (en) 2002-10-24

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Legal Events

Date Code Title Description
MM01 Lapse because of not paying annual fees

Effective date: 20160915