AT396258B - Method and device for producing secondary seeds - Google Patents

Abstract

A device, or a method, for producing secondary seeds for the growth of single crystals from hydrothermal growth solutions has a growth container 10 which is intended to hold the hydrothermal growth solution 11 and into which at least two covers 12, 13 optionally fastened to a holder 14 dip. Those crystal surfaces of a primary seed 1 which have a higher growth rate than other crystal surfaces of the primary seed 1 are therefore covered from the adjacent growth solution, the covers 12, 13 projecting beyond the edge of the covered crystal surfaces. It is in this way possible to control the shape and size of the secondary seeds needed for the actual crystal growth. <IMAGE>

Description

AT396238B

Db bsa £ 2k da process sv KeasSa ^ j from Schcndsiheiaen iBr t &amp; e Zockt ναι EtakrinaDea mm bsferSnc :! » ZesbJßsaca. »Like this procedure for the procedure.

Vs »d = a BesrET • Setamfirfceim · throw the following KriaaEkesae with a certain lasserea fora (a. D. ventasdea. Which is used for the Hydrotbsnnalzarht of Fjrkriitaflcu«.

Ribaädce Ittinatrr fcBrrer Fora values z. B. zar Zockt na monocrystals used, vdche KrbbüSSck »oh otcmheter different size WtchanrasgcachwitKSGfccit or Venchiebangxxekiarea with vrirzrC'rsfJth jpcßea absolute amounts cnfwdaen. am the Antwacfimi (cappmg out) quick kit. — TTYf ^ a aj’T.ta slow wnKtrxndsr π vozfljira.

Sofcta bcif ^ Relswcise aas that is described in more detail in the Ftgureeatesreibschrift Fig. I cräb! 5cit. &Lt; fcg the rapidly growing 2 «-RCchca ca (jacBtenaenBcispSd after a short time, it vanishes after a short time only relatively slowly in the area of the coat The problem eaf, <t3 ds the reachable crystal size is limited by the AcsbUdaag of the aa laagsamstea wachaeadea KiirSHiKcfcca. Tcw. That hesqq. Certain crystalline orientations kataa

Beker would be delighted with the problem by first using a crystal seed of any shape (in fo! F? Adia &quot; Ptimateta ,, adapted) a single crystal, from which a small seed of the desired farm would be cut. If the dimensions or the sweeter form of the sublime plant is not sufficient, the process could be continued through further breeding and cutting until the desired size or size of the crystal. This manufacturer vertach is aaaJgeiagS tedious and teaer.

Furthermore, in some cases it is possible, by varying the breeding conditions, to vary the ratio of the different growth rates, but there remain cases in which the growth in a certain crystallographic direction remains so small that there is no seedling enlargement in the plant.

The starting point of the present invention is to provide a method or a device for the production of sackundüikciinea estimates with which the fora or size of the secondary seeds required for the actual crystal growing can be obtained in a simple manner and in a short time.

This task was solved according to the invention in that at least two crystal fingers of an internal germ. which have a higher waxing rate than other artifacts of the Piimärkeinu compared to the adjoining Zuchüosung are covered with a protruding above the edge of these crystal smells, whereby a preferred growth of the Primürkcims is achieved in predeterminable directions. The fact that the rapidly growing crystalline substances are covered gives rise to a preference for the slowly growing curses due to the lack of a connection process. Since the covers protrude beyond the crystal surface to be covered, the rapidly growing curses remain covered even during the growth of the crystal until the desired shape of the secondary nucleus is formed.

In an advantageous embodiment of the invention it is provided that pbutene-shaped. Sehuarikrkeimc two parallel opposite crystal vials of a primary seed are covered, whereby a preferential growth of the primary foam is achieved in the gap between the covers. By the AMyfrw A-r «rtmril mcIimiIhi KrtaantBehw» hm &lt; ta &lt; "Ymmv’ rapping -W lfrät "" "We were wrong. The crystal only later forms a Grertzhabim, which causes the crystal to grow very slowly.

The production of plate-shaped secondary cells, or the two-dimensional growth of the primary cells, can also be used advantageously for the production of planar crystal elements. The iKm - ICriWallpbmi »n irt nWwhmiWwm · vm such p« rn quality, &lt; fold Aiet nartitraglirh »

Processing in most cases can be omitted. In accordance with previous manufacturing processes, it was customary to cut such crystal tarpaulins on a larger crystal piece and then to cut them up and polish them.

According to the invention it is also possible to leave only one Kriallfiüchc of the Rrimüitacises uncovered. Any tarpaulin material that is chemically resistant to the cultivation solution on the one hand and that on the other hand does not favor the spontaneous nucleic acid due to its surface diarrhea is suitable for covering the crystal holes. The crystal surface can preferably be covered with glass or ceramic

The method according to the invention can preferably be used for the production of quaizhomOty type secondary flime, which are then Aasgangprodukt for the cultivation of large quard &gt; oroOy type Fmlniaallc.

A VorriehnmgzM’ implementation of the inventive method provides that in a Zudubehülier for receiving the hydrothermal ZudulOsung at least two, possibly attached to a bracket covers ctncnchca. cover the crystal tubes of a primitive crime compared to the adjacent growing solution, which have a higher growth rate than other crystal curses of the primary crystal. where the ΑΜτΙηιη ^ Λ B «nd iW« hp »lwh« i Krittalinsrhra himimp Rin AMwInuij, · hlMim m «irK» .Wrfc attached to the PrimSkristtO «also attached to the primitive germ.

According to the invention, it is mainly provided that two covers with essentially parallel faces form the primary part surrounding the primary part, the ratio of -2-

Claims (5)

AT3962SSB C ^ 3 £ 3 Τίώ ϋι S ^ slas fca area wiaüu OtS ad 2 Ji GegL ln a WefcetbOdang kfln — η two l — 'n ft * &quot; * rr * iir ~~ i in 7.1 * 1 inln'n i * rn nrrlrfllrhm cngirräikni wia. iliiia inriagiaiiaiir * &quot; ***** DaYTcSra da »sridirfi. The E & isj wcd cn fciyafa xbsd «ca Zexhmmsea closer. E &gt; show Fig. 1 schematically S ώ »KföfiCaa ia pahniitiwg DanceCaag ia aatencfcxdlichca wax mass stadium, Fig. 2 an αίίάτχίΐϋϊ Vgridac; nr DocbiCieg da Vcrtatrens. Fq. 3 shows a section along the line (Π1-ΠΙ) in Rj 2, rawic Rj 4 and 5 single crystals. where the Babin! l adk Rj. 4 with court a * Flialdtiai aad jifr rrt ίΐ ^ 5 «ή Hilf &gt; mp «fiahnj ^ Hirt ha ^ rfrilin« frlim ^ itrinw jhMiih wrlii The ia 1¾. 1 daicesteOte PrimSrkeini (1) has crystal faces (Z). In the example shown, 10 cn »the KriarJÜBcftcn (M) (grain flakes) grow three times as quickly. A growth stage of the Knsalb is generally indicated with stricblienea IJnira (2) in the upper half of the picture, whereby maa sees. that the Crystalsnchea (Z *) is getting smaller and smaller after showing a border habit (dashed line (3)). From this zea, the critical (4) no longer grows relatively slowly in the direction «which the MarseifEichca (M) go normally, IS In conventional processes, a plateau-shaped SefcuntBrfceim (5) gJLwrhn» «twit wrifliff was now attached to the crystal (4) hw 7nfVWin ^ ini ^ .B iBuriht with «lrirlipinttlw &lt; wi P. | i.jlinnplnii« l ff »jw amen half of the picture wax wax tart'aim acinea Grrn7hahinn in the grichpunktienea limit (7) eoeachL According to the first method according to the invention, non covers the Z-surface of the primary nucleus 20 (1) (see, for example, cover (13) in the lower half of the figure), so that the Z-surface from Kookunea-Tilächea is eliminated — and the primary crystal preferably grows in the direction of the lateral surfaces. The streaking of a secondary seed (9) produced in this way is indicated in the lower half of the figure with dotted lines (8). After reaching the desired CrOBc of the manufactured sctaax trimme (9), the cover of the Z-FBchea is removed and the breeding continued to the desired size. The device for the production of secondary cytnca (9) shown in FIGS. 2 and 3 from primary elements (1) shows a breeding container (10) with a hydrothermal breeding solution (11). Two covers (12) and (13) are immersed in the growing solution, which are fastened to a holder (14) and cover two parallel crystal surfaces of the primary germ (1), which is shown in a simplified cube shape. The covers (12) and (13) as well as the crystal germ are all surrounded by the growth solution. 30 The essentially parallel cover areas (12% 13 *) of the covers form a gap surrounding the primary germ, whereby the ratio of width (b) to height (h) of the gap can be between 0.5 and 2J5 depending on the flow characteristics of the surrounding growing solution . Because of the low laminar flow within the gap, the crystal growth is of very good quality. As shown in Figs. 4 and 5. can, for example, with a cube-shaped primaryitciaa (1 *), which e.g. 35 rtabfOrmigcs growth (Fig. 4). by producing a pbttenfBruügea SekmuBrinrns (9 *) an increase in the cross section of the resulting single crystal (4 *) can be achieved. 6, in addition to the two covers (12, 13) which limit the growth of the primary germ (1) above and below, there are further covers (15) and (14) vcTgecehsn. which are arranged in the space between the covers (12) and (13) "and with their paiDclca 40 decimal areas (15 *) and (160 limit the" lateral growth of the primary ketine (1). This results in rod-shaped secondary nuclei, which in the direction of the Arrows (17) grow, it is also possible to leave only uncovered crystal compartments (1) uncovered. 45 PATENT CLAIMS SO 1. Procedure for the production of secondary germs for the cultivation of single crystals from hydrothermal growth solutions, characterized in that at least two crystal surfaces of a primary nucleus, which have a higher growth rate than other crystal surfaces of the primary nucleus compared to the an * 55 Γ &gt; 6 £ 9ΐνΐΜ &gt; —i «^ fiuff jUfff KptfallflVliPii timatwi jyimIsüh A ^ u | ppI if« g, which makes it the preferred «vigilant de« primarte pre-tunable directions are set. 2. The method according to claim 1, characterized in that for the production pbucafOnniger. Secondary germs two crystal faces of a primary cell opposite each other are covered, thereby making a 40-minute watch — the Rimlrheim in the peek between the covers crriehwiwL -3- 5 10 15 AT3962MB 3. Vcrü ± ra cri &gt; Aasprach 1, liiliwl ΛΛ w an Irimllffck de «Priafcfai— &gt; &gt; · 4. Vc2 ± na eaS &gt; Äm der Aaqrtche 1 bit 3. 3. Ya £ ± ssa zach &lt; das | i &gt; i — irtrnti «hfl qoarzhoraOotype iMfiMr» &lt; 1 Vc3eü2c = 3 bt EMdnj «a SAmdMcaa for the Zackt ra Fmkriaallcn aas hydrothcimalca Zaeftstgcacjgt dadarch gekeaazeiachaa dait (za) mfaia lld by (m) &quot; - {«« * «* two cover agea (12, 13), possibly fastened in a holder (14), he tircf ^ sn. dts KrisaEiÜcfaca ciaca Primartem «(1) gcgcnCbcr the« Bcgendca Znchtlflsang (11) abdcckca. 7. Vcnichtang according to Aasprach 6, dadarch marked, that two covering areas (12t 13) with iai weacadrchea parallel PffJrflarhra (12 *, 13 *) are provided and which also form the prime part (1) ambenrtcn Spelled. where the VeridBtni * voa width (b) za depth (t) of the gap in the area zwisebea OJi sad ZS ß. Device according to Aasprach 7th dadarch characterized that two Zaateliche covering areas (15, 14) are generally arranged between the cover areas (12 ', 13 *), the previously parallel cover areas (15 \ IC) of which delimit the priaribtcim (1) laterally. Hieza 2 sheets Zekhnaagea Λ -4-