AT373443B - Schaltkreis mit einem halbleiterbauteil - Google Patents
Schaltkreis mit einem halbleiterbauteilInfo
- Publication number
- AT373443B AT373443B AT0323074A AT323074A AT373443B AT 373443 B AT373443 B AT 373443B AT 0323074 A AT0323074 A AT 0323074A AT 323074 A AT323074 A AT 323074A AT 373443 B AT373443 B AT 373443B
- Authority
- AT
- Austria
- Prior art keywords
- circuit
- semiconductor component
- semiconductor
- component
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/676—Combinations of only thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48043881A JPS49131388A (en, 2012) | 1973-04-18 | 1973-04-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA323074A ATA323074A (de) | 1983-05-15 |
| AT373443B true AT373443B (de) | 1984-01-25 |
Family
ID=12676034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT0323074A AT373443B (de) | 1973-04-18 | 1974-04-18 | Schaltkreis mit einem halbleiterbauteil |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS49131388A (en, 2012) |
| AT (1) | AT373443B (en, 2012) |
| CA (1) | CA1015867A (en, 2012) |
| DE (1) | DE2418560A1 (en, 2012) |
| FR (1) | FR2226750B1 (en, 2012) |
| GB (1) | GB1472113A (en, 2012) |
| IT (1) | IT1009920B (en, 2012) |
| NL (1) | NL7405294A (en, 2012) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5754969B2 (en, 2012) * | 1974-04-04 | 1982-11-20 | ||
| JPS5753672B2 (en, 2012) * | 1974-04-10 | 1982-11-13 | ||
| JPS57658B2 (en, 2012) * | 1974-04-16 | 1982-01-07 | ||
| JPS5714064B2 (en, 2012) * | 1974-04-25 | 1982-03-20 | ||
| JPS5648983B2 (en, 2012) * | 1974-05-10 | 1981-11-19 | ||
| JPS5718710B2 (en, 2012) * | 1974-05-10 | 1982-04-17 | ||
| DE2705990A1 (de) * | 1977-02-12 | 1978-08-17 | Engl Walter L Prof Dr Rer Nat | Integrierte schaltung mit einem thyristor e2 |
| DE2706031A1 (de) * | 1977-02-12 | 1978-08-17 | Engl Walter L Prof Dr Rer Nat | Integrierte schaltung mit einem thyristor |
| DE2860654D1 (en) | 1977-09-08 | 1981-08-06 | Gen Electric Co Ltd | Planar pnpn semiconductor device of circular geometry and magnetic field sensor using such a device |
| US4365208A (en) * | 1980-04-23 | 1982-12-21 | Rca Corporation | Gain-controlled amplifier using a controllable alternating-current resistance |
-
1973
- 1973-04-18 JP JP48043881A patent/JPS49131388A/ja active Pending
-
1974
- 1974-04-17 DE DE2418560A patent/DE2418560A1/de not_active Withdrawn
- 1974-04-17 CA CA197,701A patent/CA1015867A/en not_active Expired
- 1974-04-17 GB GB1680074A patent/GB1472113A/en not_active Expired
- 1974-04-18 FR FR7413549A patent/FR2226750B1/fr not_active Expired
- 1974-04-18 NL NL7405294A patent/NL7405294A/xx not_active Application Discontinuation
- 1974-04-18 IT IT21611/74A patent/IT1009920B/it active
- 1974-04-18 AT AT0323074A patent/AT373443B/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| IT1009920B (it) | 1976-12-20 |
| CA1015867A (en) | 1977-08-16 |
| DE2418560A1 (de) | 1974-11-14 |
| ATA323074A (de) | 1983-05-15 |
| FR2226750B1 (en, 2012) | 1978-03-24 |
| FR2226750A1 (en, 2012) | 1974-11-15 |
| JPS49131388A (en, 2012) | 1974-12-17 |
| GB1472113A (en) | 1977-05-04 |
| NL7405294A (en, 2012) | 1974-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee | ||
| ELJ | Ceased due to non-payment of the annual fee |