AT338335B - PROCESS FOR PRODUCING A ZONE OF A FIRST TYPE OF CONDUCTIVITY IN A SEMICONDUCTOR CRYSTAL FROM THE SECOND TO THE FIRST OPPOSITE CONDUCTIVITY TYPE - Google Patents

PROCESS FOR PRODUCING A ZONE OF A FIRST TYPE OF CONDUCTIVITY IN A SEMICONDUCTOR CRYSTAL FROM THE SECOND TO THE FIRST OPPOSITE CONDUCTIVITY TYPE

Info

Publication number
AT338335B
AT338335B AT82571A AT82571A AT338335B AT 338335 B AT338335 B AT 338335B AT 82571 A AT82571 A AT 82571A AT 82571 A AT82571 A AT 82571A AT 338335 B AT338335 B AT 338335B
Authority
AT
Austria
Prior art keywords
type
conductivity
zone
producing
semiconductor crystal
Prior art date
Application number
AT82571A
Other languages
German (de)
Other versions
ATA82571A (en
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA82571A publication Critical patent/ATA82571A/en
Application granted granted Critical
Publication of AT338335B publication Critical patent/AT338335B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
AT82571A 1970-02-19 1971-02-01 PROCESS FOR PRODUCING A ZONE OF A FIRST TYPE OF CONDUCTIVITY IN A SEMICONDUCTOR CRYSTAL FROM THE SECOND TO THE FIRST OPPOSITE CONDUCTIVITY TYPE AT338335B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702007752 DE2007752B2 (en) 1970-02-19 1970-02-19 Process for the production of doped semiconductor material

Publications (2)

Publication Number Publication Date
ATA82571A ATA82571A (en) 1976-12-15
AT338335B true AT338335B (en) 1977-08-25

Family

ID=5762769

Family Applications (1)

Application Number Title Priority Date Filing Date
AT82571A AT338335B (en) 1970-02-19 1971-02-01 PROCESS FOR PRODUCING A ZONE OF A FIRST TYPE OF CONDUCTIVITY IN A SEMICONDUCTOR CRYSTAL FROM THE SECOND TO THE FIRST OPPOSITE CONDUCTIVITY TYPE

Country Status (8)

Country Link
JP (1) JPS5338597B1 (en)
AT (1) AT338335B (en)
CH (1) CH519249A (en)
DE (1) DE2007752B2 (en)
FR (1) FR2080610B1 (en)
GB (1) GB1289432A (en)
NL (1) NL7102176A (en)
SE (1) SE366227B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104412A1 (en) * 1982-09-23 1984-04-04 Allied Corporation Polymeric boron-nitrogen dopant

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2262021C2 (en) * 1972-12-19 1982-12-30 Degussa Ag, 6000 Frankfurt Process for doping semiconductor silicon
JPH01135017A (en) * 1987-11-20 1989-05-26 Fujitsu Ltd Manufacture of semiconductor device
DE4013929C2 (en) * 1989-05-02 1995-12-07 Toshiba Kawasaki Kk Method for introducing interfering substances into a semiconductor material layer when producing a semiconductor component and application of the method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3084079A (en) * 1960-10-13 1963-04-02 Pacific Semiconductors Inc Manufacture of semiconductor devices
US3355291A (en) * 1963-10-08 1967-11-28 Texas Instruments Inc Application of glass to semiconductor devices
US3514348A (en) * 1967-05-10 1970-05-26 Ncr Co Method for making semiconductor devices
JPS4822536B1 (en) * 1969-03-20 1973-07-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0104412A1 (en) * 1982-09-23 1984-04-04 Allied Corporation Polymeric boron-nitrogen dopant

Also Published As

Publication number Publication date
DE2007752B2 (en) 1978-07-27
DE2007752C3 (en) 1979-04-05
CH519249A (en) 1972-02-15
FR2080610A1 (en) 1971-11-19
GB1289432A (en) 1972-09-20
DE2007752A1 (en) 1971-08-26
NL7102176A (en) 1971-08-23
SE366227B (en) 1974-04-22
ATA82571A (en) 1976-12-15
JPS5338597B1 (en) 1978-10-16
FR2080610B1 (en) 1976-04-16

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee