AT303420B - Electrical storage arrangement with a field effect transistor - Google Patents

Electrical storage arrangement with a field effect transistor

Info

Publication number
AT303420B
AT303420B AT357970A AT357970A AT303420B AT 303420 B AT303420 B AT 303420B AT 357970 A AT357970 A AT 357970A AT 357970 A AT357970 A AT 357970A AT 303420 B AT303420 B AT 303420B
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
electrical storage
storage arrangement
arrangement
Prior art date
Application number
AT357970A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT303420B publication Critical patent/AT303420B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/792Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
AT357970A 1969-04-21 1970-04-20 Electrical storage arrangement with a field effect transistor AT303420B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691920162 DE1920162A1 (en) 1969-04-21 1969-04-21 Field effect transistor arrangement, in particular for storage purposes

Publications (1)

Publication Number Publication Date
AT303420B true AT303420B (en) 1972-11-27

Family

ID=5731821

Family Applications (1)

Application Number Title Priority Date Filing Date
AT357970A AT303420B (en) 1969-04-21 1970-04-20 Electrical storage arrangement with a field effect transistor

Country Status (7)

Country Link
AT (1) AT303420B (en)
CH (1) CH506856A (en)
DE (1) DE1920162A1 (en)
FR (1) FR2039318A1 (en)
GB (1) GB1287353A (en)
NL (1) NL7003553A (en)
SE (1) SE348867B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850030B2 (en) * 1979-03-08 1983-11-08 日本放送協会 Photoelectric conversion device and solid-state imaging plate using it
EP0108650A3 (en) * 1982-11-09 1986-02-12 Zytrex Corporation Programmable mos transistor

Also Published As

Publication number Publication date
GB1287353A (en) 1972-08-31
DE1920162A1 (en) 1970-10-22
CH506856A (en) 1971-04-30
NL7003553A (en) 1970-10-23
SE348867B (en) 1972-09-11
FR2039318A1 (en) 1971-01-15

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee