AT294188B - FIELD EFFECT TRANSISTOR WITH ISOLATED GATE ELECTRODE AND PROCESS FOR ITS MANUFACTURING - Google Patents
FIELD EFFECT TRANSISTOR WITH ISOLATED GATE ELECTRODE AND PROCESS FOR ITS MANUFACTURINGInfo
- Publication number
- AT294188B AT294188B AT63069A AT63069A AT294188B AT 294188 B AT294188 B AT 294188B AT 63069 A AT63069 A AT 63069A AT 63069 A AT63069 A AT 63069A AT 294188 B AT294188 B AT 294188B
- Authority
- AT
- Austria
- Prior art keywords
- manufacturing
- gate electrode
- field effect
- effect transistor
- isolated gate
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD13019368 | 1968-02-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT294188B true AT294188B (en) | 1971-10-15 |
Family
ID=5479765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT63069A AT294188B (en) | 1968-02-14 | 1969-01-21 | FIELD EFFECT TRANSISTOR WITH ISOLATED GATE ELECTRODE AND PROCESS FOR ITS MANUFACTURING |
Country Status (3)
| Country | Link |
|---|---|
| AT (1) | AT294188B (en) |
| CH (1) | CH480736A (en) |
| SE (1) | SE342940B (en) |
-
1969
- 1969-01-21 AT AT63069A patent/AT294188B/en active
- 1969-02-07 CH CH188269A patent/CH480736A/en not_active IP Right Cessation
- 1969-02-13 SE SE198269A patent/SE342940B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE342940B (en) | 1972-02-21 |
| CH480736A (en) | 1969-10-31 |
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