AT292212B - Verfahren zur Herstellung des neuen 7α-Methyl-3,16β,17β-trihydroxy-Δ<1,3,5(10)>-oestratriens - Google Patents

Verfahren zur Herstellung des neuen 7α-Methyl-3,16β,17β-trihydroxy-Δ<1,3,5(10)>-oestratriens

Info

Publication number
AT292212B
AT292212B AT178870A AT178870A AT292212B AT 292212 B AT292212 B AT 292212B AT 178870 A AT178870 A AT 178870A AT 178870 A AT178870 A AT 178870A AT 292212 B AT292212 B AT 292212B
Authority
AT
Austria
Prior art keywords
oestratriens
trihydroxy
methyl
preparation
new
Prior art date
Application number
AT178870A
Other languages
English (en)
Original Assignee
Ciba Geigy Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ciba Geigy Ag filed Critical Ciba Geigy Ag
Application granted granted Critical
Publication of AT292212B publication Critical patent/AT292212B/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
AT178870A 1969-02-27 1970-02-26 Verfahren zur Herstellung des neuen 7α-Methyl-3,16β,17β-trihydroxy-Δ<1,3,5(10)>-oestratriens AT292212B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80279669A 1969-02-27 1969-02-27
CH296469 1969-02-27

Publications (1)

Publication Number Publication Date
AT292212B true AT292212B (de) 1971-08-25

Family

ID=25691845

Family Applications (1)

Application Number Title Priority Date Filing Date
AT178870A AT292212B (de) 1969-02-27 1970-02-26 Verfahren zur Herstellung des neuen 7α-Methyl-3,16β,17β-trihydroxy-Δ<1,3,5(10)>-oestratriens

Country Status (7)

Country Link
US (1) US3600705A (de)
AT (1) AT292212B (de)
BE (1) BE746548A (de)
DE (2) DE2007417A1 (de)
FR (2) FR2032447A1 (de)
GB (2) GB1302763A (de)
NL (2) NL7002750A (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543352B1 (de) * 1968-08-27 1979-02-21
US3740666A (en) * 1970-12-16 1973-06-19 H Thim Circuit for suppressing the formation of high field domains in an overcritically doped gunn-effect diode
US4134122A (en) * 1974-11-29 1979-01-09 Thomson-Csf Hyperfrequency device with gunn effect
FR2293069A1 (fr) * 1974-11-29 1976-06-25 Thomson Csf Dispositif hyperfrequence a effet gunn
FR2293067A1 (fr) * 1974-11-29 1976-06-25 Thomson Csf Cathode pour diode de gunn et diode de gunn comportant une telle cathode
GB1529853A (en) * 1975-05-13 1978-10-25 Secr Defence Transferred electron devices
FR2360996A1 (fr) * 1976-06-15 1978-03-03 Thomson Csf Diode semiconductrice utilisant le temps de transit des porteurs de charge, possedant une electrode a matrice de micropointes
JPS5676573A (en) * 1979-11-28 1981-06-24 Nippon Telegr & Teleph Corp <Ntt> Field effect semiconductor device
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device
DE19906159A1 (de) * 1999-02-09 2000-08-10 Schering Ag 16-Hydroxyestratriene als selektiv wirksame Estrogene
FR2803454B1 (fr) * 1999-12-30 2003-05-16 Thomson Tubes Electroniques Generateur d'impulsions hyperfrequences integrant un compresseur d'impulsions
CN102969805B (zh) * 2012-12-07 2015-02-18 四川大学 微波能量转换装置
CN203797741U (zh) * 2014-04-24 2014-08-27 广东美的厨房电器制造有限公司 微波炉
DE102018121672A1 (de) 2018-09-05 2020-03-05 Technische Universität Darmstadt Gunndiode und Verfahren zum Erzeugen einer Terahertzstrahlung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1516754B1 (de) * 1965-05-27 1972-06-08 Fujitsu Ltd Halbleitervorrichtung
US3509478A (en) * 1966-12-29 1970-04-28 Bell Telephone Labor Inc Two-valley semiconductor amplifier

Also Published As

Publication number Publication date
FR2032477A1 (de) 1970-11-27
GB1242194A (en) 1971-08-11
BE746548A (fr) 1970-08-26
NL7002811A (de) 1970-08-31
DE2007417A1 (de) 1970-09-03
GB1302763A (de) 1973-01-10
DE2008679A1 (de) 1970-09-17
US3600705A (en) 1971-08-17
NL7002750A (de) 1970-08-31
FR2032447A1 (fr) 1970-11-27

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