AT287652B - Process for producing Mg-Al spinel crystals with stoichiometric composition for integrated circuits - Google Patents

Process for producing Mg-Al spinel crystals with stoichiometric composition for integrated circuits

Info

Publication number
AT287652B
AT287652B AT430669A AT430669A AT287652B AT 287652 B AT287652 B AT 287652B AT 430669 A AT430669 A AT 430669A AT 430669 A AT430669 A AT 430669A AT 287652 B AT287652 B AT 287652B
Authority
AT
Austria
Prior art keywords
producing
integrated circuits
stoichiometric composition
spinel crystals
spinel
Prior art date
Application number
AT430669A
Other languages
German (de)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT287652B publication Critical patent/AT287652B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
AT430669A 1968-05-06 1969-05-05 Process for producing Mg-Al spinel crystals with stoichiometric composition for integrated circuits AT287652B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681767394 DE1767394A1 (en) 1968-05-06 1968-05-06 Process for the production of Mg-Al spinel crystals with stoechiometric composition for integrated circuits

Publications (1)

Publication Number Publication Date
AT287652B true AT287652B (en) 1971-02-10

Family

ID=5699335

Family Applications (1)

Application Number Title Priority Date Filing Date
AT430669A AT287652B (en) 1968-05-06 1969-05-05 Process for producing Mg-Al spinel crystals with stoichiometric composition for integrated circuits

Country Status (8)

Country Link
US (1) US3619131A (en)
AT (1) AT287652B (en)
CH (1) CH519932A (en)
DE (1) DE1767394A1 (en)
FR (1) FR1598617A (en)
GB (1) GB1220311A (en)
NL (1) NL6906593A (en)
SE (1) SE345395B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3883313A (en) * 1972-12-14 1975-05-13 Rca Corp Modified czochralski-grown magnesium aluminate spinel and method of making same
US3960503A (en) * 1974-12-27 1976-06-01 Corning Glass Works Particulate material feeder for high temperature vacuum system
US4186046A (en) * 1976-09-29 1980-01-29 The United States Of America As Represented By The Secretary Of The Army Growing doped single crystal ceramic materials
US5002742A (en) * 1983-05-16 1991-03-26 W. R. Grace & Co.-Conn. Inorganic oxide sorbents for sulfur oxides
US4792377A (en) * 1987-02-09 1988-12-20 The Regents Of The University Of California Flux growth of sodium beta" alumina
JP2639121B2 (en) * 1989-08-25 1997-08-06 三菱マテリアル株式会社 Method for producing fine α-alumina powder
US7648933B2 (en) 2006-01-13 2010-01-19 Dynamic Abrasives Llc Composition comprising spinel crystals, glass, and calcium iron silicate
AT512037B1 (en) * 2012-05-31 2013-05-15 Innotech Holding Gmbh Method for growing crystals by flame melting
CN103014855A (en) * 2012-12-25 2013-04-03 福建鑫磊晶体有限公司 Preparation method and equipment for preparing alpha-Al2O3 single crystal through gamma-Al2O3

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226193A (en) * 1962-06-21 1965-12-28 Union Carbide Corp Method for growing crystals
US3457033A (en) * 1965-12-17 1969-07-22 Gen Electric Process for producing magnesiaalumina spinel whiskers
US3472615A (en) * 1967-08-24 1969-10-14 Rca Corp Growing monocrystalline stoichiometric magnesium aluminate

Also Published As

Publication number Publication date
CH519932A (en) 1972-03-15
DE1767394A1 (en) 1971-08-26
NL6906593A (en) 1969-11-10
GB1220311A (en) 1971-01-27
US3619131A (en) 1971-11-09
SE345395B (en) 1972-05-29
FR1598617A (en) 1970-07-06

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee