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Application filed by Siemens AgfiledCriticalSiemens Ag
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Publication of AT275689BpublicationCriticalpatent/AT275689B/de
H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
H01G9/0029—Processes of manufacture
H01G9/0032—Processes of manufacture formation of the dielectric layer
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Engineering & Computer Science
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Power Engineering
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Manufacturing & Machinery
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Microelectronics & Electronic Packaging
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Electric Double-Layer Capacitors Or The Like
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Inorganic Compounds Of Heavy Metals
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AT117568A1967-02-091968-02-07Verfahren zur Formierung von Tantal- bzw. Niobkörpern, insbesondere für Elektroden in Elektrolytkondensatoren
AT275689B
(de)
Verbetering van de werkwijze voor het vervaardigen van elektrolytische condensatoren, alsmede condensator vervaardigd volgens deze verbeterde werkwijze.