AT261059B - Device for measuring avalanche breakdown voltages of diodes and transistors and of contact voltages of transistors - Google Patents

Device for measuring avalanche breakdown voltages of diodes and transistors and of contact voltages of transistors

Info

Publication number
AT261059B
AT261059B AT1061964A AT1061964A AT261059B AT 261059 B AT261059 B AT 261059B AT 1061964 A AT1061964 A AT 1061964A AT 1061964 A AT1061964 A AT 1061964A AT 261059 B AT261059 B AT 261059B
Authority
AT
Austria
Prior art keywords
transistors
voltages
diodes
avalanche breakdown
contact
Prior art date
Application number
AT1061964A
Other languages
German (de)
Inventor
Miklos Dipl Ing Kocsis
Original Assignee
Egyesuelt Izzolampa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Egyesuelt Izzolampa filed Critical Egyesuelt Izzolampa
Application granted granted Critical
Publication of AT261059B publication Critical patent/AT261059B/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/261—Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Of Devices, Machine Parts, Or Other Structures Thereof (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Nitrogen And Oxygen As The Only Ring Hetero Atoms (AREA)
  • Rectifiers (AREA)
AT1061964A 1964-01-06 1964-12-15 Device for measuring avalanche breakdown voltages of diodes and transistors and of contact voltages of transistors AT261059B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HUEE001063 1964-01-06

Publications (1)

Publication Number Publication Date
AT261059B true AT261059B (en) 1968-04-10

Family

ID=10995166

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1061964A AT261059B (en) 1964-01-06 1964-12-15 Device for measuring avalanche breakdown voltages of diodes and transistors and of contact voltages of transistors

Country Status (3)

Country Link
AT (1) AT261059B (en)
DE (1) DE1464914B2 (en)
GB (1) GB1099542A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113030676B (en) * 2021-02-26 2023-03-24 赛英特半导体技术(西安)有限公司 Diode triode wafer testing method based on near particle method
CN113671336B (en) * 2021-08-20 2024-03-08 上海瞻芯电子科技有限公司 Power device testing device

Also Published As

Publication number Publication date
DE1464914A1 (en) 1969-12-18
GB1099542A (en) 1968-01-17
DE1464914B2 (en) 1971-04-22

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