AT240917B - Verfahren zur Wärmebehandlung von einkristallinen Halbleiterkörpern - Google Patents

Verfahren zur Wärmebehandlung von einkristallinen Halbleiterkörpern

Info

Publication number
AT240917B
AT240917B AT907663A AT907663A AT240917B AT 240917 B AT240917 B AT 240917B AT 907663 A AT907663 A AT 907663A AT 907663 A AT907663 A AT 907663A AT 240917 B AT240917 B AT 240917B
Authority
AT
Austria
Prior art keywords
heat treatment
crystalline semiconductor
semiconductor bodies
bodies
crystalline
Prior art date
Application number
AT907663A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT240917B publication Critical patent/AT240917B/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10Reaction chambers; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
AT907663A 1963-03-29 1963-11-13 Verfahren zur Wärmebehandlung von einkristallinen Halbleiterkörpern AT240917B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0084444 1963-03-29

Publications (1)

Publication Number Publication Date
AT240917B true AT240917B (de) 1965-06-25

Family

ID=7511712

Family Applications (1)

Application Number Title Priority Date Filing Date
AT907663A AT240917B (de) 1963-03-29 1963-11-13 Verfahren zur Wärmebehandlung von einkristallinen Halbleiterkörpern

Country Status (5)

Country Link
AT (1) AT240917B (US06826419-20041130-M00005.png)
BE (1) BE645737A (US06826419-20041130-M00005.png)
CH (1) CH412822A (US06826419-20041130-M00005.png)
GB (1) GB1052517A (US06826419-20041130-M00005.png)
NL (1) NL302761A (US06826419-20041130-M00005.png)

Also Published As

Publication number Publication date
BE645737A (US06826419-20041130-M00005.png) 1964-09-28
NL302761A (US06826419-20041130-M00005.png)
GB1052517A (US06826419-20041130-M00005.png)
CH412822A (de) 1966-05-15

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